Leakage Current Reduction of Ni-MILC Poly-Si TFT Using Chemical Cleaning Method |
Lee, Kwang-Jin
(Department of Materials Science & Engineering, Hanyang University)
Kim, Doyeon (Department of Energy Engineering, Dankook University) Choi, Duck-Kyun (Department of Materials Science & Engineering, Hanyang University) Kim, Woo-Byoung (Department of Energy Engineering, Dankook University) |
1 | M. Bonnel, N. Duhamel, L. Haji, B. Loisel and J. Stoemenos, IEEE Electron Device Lett., 14, 551 (1993). DOI |
2 | S. Noguchi, S. Kiyama, S. Tsuda and S. Nakano, Jpn. J. Appl. Phys., 32, 6190 (1993). DOI |
3 | K. Shimizu, O. Sugiura and M. Matsumura, IEEE Trans. Electron Devices, 40, 112 (1993). DOI |
4 | R. Bachrach, K. Winer, J. Boyce, S. Ready, R. Johnson and G. Anderson, J. Electron. Mater., 19, 241 (1990). DOI |
5 | G. Giust and T. Sigmon, IEEE Trans. Electron Devices, 45, 925 (1998). DOI |
6 | D. Fork, G. Anderson, J. Boyce, R. Johnson and P. Mei, Appl. Phys. Lett., 68, 2138. (1996) DOI |
7 | R. Cammarata, C. Thompson, C. Hayzelden and K. Tu, J. Mater. Res., 5, 2133 (1990). DOI |
8 | O. Nast and A. J. Hartmann, J. Appl. Phys., 88, 716 (2000). DOI |
9 | J. B. Lee, C. J. Lee and D. K. Choi, Jpn. J. Appl. Phys., 40, 6177 (2001). DOI |
10 | D. Murley, N. Young, M. Trainor and D. McCulloch, IEEE Trans. Electron Devices, 48, 1145 (2001). DOI |
11 | H. Kobayashi, Y. L. Liu, Y. Yamashita, J. Ivan o, S. Imai and M. Takahashi, Sol. Energy, 80, 645 (2006). DOI |
12 | N. Fujiwara, Y. L. Liu, M. Takahashi and H. Kobayashi, J. Electrochem. Soc., 153, G394 (2006). DOI |
13 | M. Takahashi, Y. L. Liu, N. Fujiwara, H. Iwasa and H. Kobayashi, Solid State Commun., 137, 263 (2006). DOI |
14 | M. Madani, Y. L. Liu, M. Takahashi, H. Iwasa and H. Kobayashi, J. Electrochem. Soc., 155, H895 (2008). DOI |
15 | O. Maida, A. Asano, M. Takahashi, H. Iwasa and H. Kobayashi, Surf. Sci., 542, 244 (2003). DOI |
16 | D. R. Lide, CRC Handbook of Chemistry and Physics, 75th ed., p.951, CRC Press, Inc., Boca Raton, USA (1995). |
17 | K. Cheng, J. Lee and J.W. Lyding, Appl. Phys. Lett., 77, 3388 (2000). DOI |
18 | N. Fujiwara, Y. L. Li, T. Nakamura, O. Maida, M. Takahashi and H. Kobayashi, Appl. Surf. Sci., 235, 372 (2004). DOI |
19 | Z. Jin, K. Moulding, H.S. Kwok and M. Wong, IEEE Trans. Electron Devices, 46, 78 (1999). DOI |
20 | W. B. Kim, T. Matsumoto and H. Kobayashi, Appl. Phys. Lett., 93, 072101 (2008). DOI |
21 | J. Ryuta, T. Yoshimi, H. Kondo, H. Okuda and Y. Shimanuki, Jpn. J. Appl. Phys., 31, 2338 (1992). DOI |
22 | F. Edelman, C. Cytermann, R. Brener, M. Eizenberg, Y. L. Khait, R. Weil and W. Beyer, J. Appl. Phys., 75, 7875 (1994). DOI |