• 제목/요약/키워드: junction temperature

검색결과 454건 처리시간 0.028초

고온 수직형 압력용기 Skirt 부의 열응력에 관한 연구 (Thermal Stress at the Junction of Skirt to Head in Hot Pressure Vessel)

  • 한명수;한종만;조용관
    • Journal of Welding and Joining
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    • 제16권2호
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    • pp.111-121
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    • 1998
  • It is well recognized that a excessive temperature gradient from the junction of head to skirt in axial direction in a hot pressure vessel can cause unpredicted high thermal stress at the junction and/or in axial direction of a skirt. this thermal stress resulting from axial thermal gradient may be a major cause of unsoundness of structural integrity. In case of cyclic operation of hot pressure vessels, the thermal stress becomes one of the primary design consideration because of the possibility of fracture as a result of cyclic thermal fatigue and progressively incremental plastic deformation. To perform thermal stress analysis of the junction and cylindrical skirt of a vessel, or, at least, to inspect quantitatively the magnitude and effect of thermal stress, the temperature profile of the vessel and skirt must be known. This paper demonstrated the temperature distribution and thermal stress analysis for the junction of skirt to head using F.E. analysis. Effect of air pocket in crotch space was quantitatively investigated to minimize the temperature gradient causing the thermal stress in axial direction. Effect of the skirt height on thermal stresses was also studied. Analysis results were compared with theoretical formulas to verify th applicability to the strength calculation in design field.

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Junction Temperature Prediction of IGBT Power Module Based on BP Neural Network

  • Wu, Junke;Zhou, Luowei;Du, Xiong;Sun, Pengju
    • Journal of Electrical Engineering and Technology
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    • 제9권3호
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    • pp.970-977
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    • 2014
  • In this paper, the artificial neural network is used to predict the junction temperature of the IGBT power module, by measuring the temperature sensitive electrical parameters (TSEP) of the module. An experiment circuit is built to measure saturation voltage drop and collector current under different temperature. In order to solve the nonlinear problem of TSEP approach as a junction temperature evaluation method, a Back Propagation (BP) neural network prediction model is established by using the Matlab. With the advantages of non-contact, high sensitivity, and without package open, the proposed method is also potentially promising for on-line junction temperature measurement. The Matlab simulation results show that BP neural network gives a more accuracy results, compared with the method of polynomial fitting.

LED 패키지에서 에폭시 몰드가 방열특성에 미치는 영향 (Effect of the Epoxy Mold on the Thermal Dissipation Behavior of LED Package)

  • 방영태;문철희
    • 조명전기설비학회논문지
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    • 제26권2호
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    • pp.1-7
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    • 2012
  • LED package with 4[mm]-height mold was manufactured and the surface temperature was measured directly using both thermocouple and thermal infrared (IR) camera. FVM simulation was conducted to estimate the surface temperature of the same LED package under the same condition, by which the accuracy of the simulation was secured. Then, the effects of the height and thermal conductivity of the mold on the junction temperature of the LED package were investigated by FVM simulation. The results showed that the junction temperature decreased by 10[$^{\circ}C$] when the mold height was 3~5[mm], but the thermal conductivity of the mold didn't affect the junction temperature significantly.

접합 온도를 고려한 TO-CAN 레이저 다이오드의 Screening 조건 연구 (Study on junction temperature characteristics of TO-CAN laser diode for optimized screening tests)

  • 이동수
    • 조명전기설비학회논문지
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    • 제16권6호
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    • pp.126-129
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    • 2002
  • 레이저 다이오드의 동작 수명을 예측하고 안정화된 성능과 신뢰도를 만족하기 위해서는 검증된 시스템으로 광부품의 신뢰성 테스트를 수행하는 것이 중요하다. 본 연구에서는 온도와 인가 전류에 따른 접합 온도(junction temperature) 특성을 관찰하여 실제 주위 온도 ( $T_{A}$)와 광소자의 온도( $T_{j}$) 차이를 이론 및 실험 적으로 도출하였고, 이를 토대로 정밀한 burn-in 테스트를 위한 screening 조건을 설정해 제시하였다.하였다.

고전력 전자소자에서 열전생성기의 생성효율과 열적성능 (Generation Efficiency and Thermal Performance of a Thermoelectric Generator with a High Power Electronic Component)

  • 김경준
    • Journal of Advanced Marine Engineering and Technology
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    • 제36권1호
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    • pp.51-56
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    • 2012
  • 본 논문은 고파워 전자소자의 폐열로부터 에너지 수확을 목적으로 하는 열전생성기의 생성효율과 열적 성능에 대하여 논한다. 열경계저항을 포함하는 열전모델이 적용되어 생성효율과 고전력 전자소자의 junction 온도를 예측하였고 그 결과는 실험치로 검증되어진다. 검증결과는 예측치와 계측치의 오차가 작음을 보인다. 검증후 열전모델은 다양한 로드저항과 열원의 열율에서 생성효율, 열전생성기 양면의 온도차, 소자의 junction 온도를 예측한다. 본 연구는 로드저항이 생성효율, 열전생성기 양면의 온도차, junction 온도에 미치는 영향에 대해서도 탐구한다.

Progressive Inelastic Deformation Characteristics of Cylindrical Structure with Plate-to-Shell Junction Under Moving Temperature Front

  • Lee, Hyeong-Yeon;Kim, Jong-Bum
    • Journal of Mechanical Science and Technology
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    • 제17권3호
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    • pp.400-408
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    • 2003
  • A study on the progressive inelastic deformation behavior of the 316 L stainless steel cylindrical structure with plate-to-shell junction under moving temperature front was carried out by structural test and analysis. The structural test intends to simulate the thermal ratcheting behavior occurring at the reactor baffle of the liquid metal reactor as free surface of hot sodium pool moves up and down under plant transients. The thermal ratchet load that heats the specimen up to 550$^{\circ}C$ was applied repeatedly and residual deformation was measured. The thermal ratcheting test was carried out with two types of cylindrical structures, one with plate to-shell junction and the other without the junction to investigate the effects of the geometric discontinuities on the global ratcheting deformation. The temperature distributions of the test specimens were measured and were used for the ratcheting analysis. The ratchet deformations were analyzed with the constitutive equation of the non-linear combined hardening model. The analysis results were in good agreement with those of the structural tests.

양자점 레이저 다이오드의 식각 깊이에 따른 접합온도 측정 (Junction Temperature of Quantum Dot Laser Diodes Depending on the Mesa Depth)

  • 정정화;한일기;이정일
    • 한국진공학회지
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    • 제17권6호
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    • pp.555-559
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    • 2008
  • 순방향 전압-온도 (forward voltage-temperature)법을 이용하여 양자점 레이저 다이오드의 접합온도를 측정하였다. 식각 깊이가 깊은 mesa 구조의 경우 입력전류에 대한 접합온도의 증가율은 0.05 K/mA인 반면, 식각 깊이가 낮은 mesa 구조의 경우 0.07 K/mA로서 상대적으로 높게 측정되었다. 깊은 mesa 구조에서의 상대적으로 낮은 접합온도 증가율은 mesa 측면 방향으로의 열확산 효과 때문인 것으로 설명된다.

온도구배 측정용 다중접점 열전대 (Multi-junction thermocouple for temperature gradient measurements)

  • 김용규;감기술
    • 센서학회지
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    • 제4권2호
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    • pp.3-6
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    • 1995
  • 항온 유지 장치의 온도구배를 측정하기 위한 다중 접점을 갖는 K형 열전대를 제작하였다. 이 온도계를 사용하여 $800^{\circ}C$로 유지되고 있는 전기로의 온도구배를 측정하였으며, 교정용 기준기급의 S형 열전대와 비교한 결과 K형 열전대의 허용오차 범위 내에서 일치하였다. 더 정확한 온도구배 측정을 위해서는 귀금속 열전대를 사용하는 것이 바람직하다는 것을 제안하였다.

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온도변화에 따른 백금 실리사이드-엔 실리콘 접합의 전자 터널링 특성 (Electron Tunneling Characteristics of PtSi-nSi Junctions according to Temperature Variations)

  • 장창덕;이정석;이광우;이용재
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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    • pp.87-91
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    • 1998
  • In this paper, We analyzed the current-voltage characteristics with n-type silicon substrates concentration and temperature variations (Room temperature, 50$^{\circ}C$, 75$^{\circ}C$) in platinum silicide and silicon junction. The electrical parameters of measurement are turn-on voltage, saturation current, ideality factor, barrier height, dynamic resistance in forward bias and reverse breakdown voltage according to variations of junction concentration of substrates and measurement temperature variations. As a result, the forward turn-on voltage, reverse breakdown voltage, barrier height and dynamic resistance were decreased but saturation currents and ideality factor were increased by substrates increased concentration variations in platinum silicide and n-silicon junction. In increased measurement temperature (RT, 50$^{\circ}C$, 75$^{\circ}C$), the extracted electrical parameter values of characteristics were rises by increased temperature variations according to the forward and reverse bias.

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Design of Super-junction TMOSFET with Embedded Temperature Sensor

  • Lho, Young Hwan
    • 전기전자학회논문지
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    • 제19권2호
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    • pp.232-236
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    • 2015
  • Super-junction trench MOSFET (SJ TMOSFET) devices are well known for lower specific on-resistance and high breakdown voltage (BV). For a conventional power MOSFET (metal-oxide semiconductor field-effect transistor) such as trench double-diffused MOSFET (TDMOSFET), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. In order to overcome the tradeoff relationship, a SJ TMOSFET structure is suggested, but sensing the temperature distribution of TMOSFET is very important in the application since heat is generated in the junction area affecting TMOSFET. In this paper, analyzing the temperature characteristics for different number bonding for SJ TMOSFET with an embedded temperature sensor is carried out after designing the diode temperature sensor at the surface of SJ TMOSFET for the class of 100 V and 100 A for a BLDC motor.