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http://dx.doi.org/10.5757/JKVS.2008.17.6.555

Junction Temperature of Quantum Dot Laser Diodes Depending on the Mesa Depth  

Jeong, Jung-Hwa (Nano Device Research Center, Korea Institute of Science and Technology)
Han, Il-Ki (Nano Device Research Center, Korea Institute of Science and Technology)
Lee, Jung-Il (Nano Device Research Center, Korea Institute of Science and Technology)
Publication Information
Journal of the Korean Vacuum Society / v.17, no.6, 2008 , pp. 555-559 More about this Journal
Abstract
Junction temperature of quantum dot laser diodes is investigated by utilizing forward voltage-temperature method. In the case of ridge type laser diodes with deep mesa the increasing rate of junction temperature to current is about 0.05 K/mA, while in the case of shallow mesa the increasing rate is about 0.07 K/mA. It is explained that the relatively low increasing rate in the deep mesa results from the heat expansion to the lateral direction of mesa.
Keywords
Laser diodes; Quantum dots; Junction temperature;
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