• Applied Microscopy
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• 제27권3호
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• pp.321-332
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• 1997

The dermal papilla is known to playa major role in influencing the form and dynamics of the hair follicle, which probably involves regulatory substances crossing the basal lamina. But little is known about the junctions between the dermal papilla and the surrounding epithelial cells of the hair bulb, or between the connective tissue and the epithelial cells on the outside of the hair follicle. This study was performed to identify the ultrastructural differences between dermoepidermal junction of the skin and connective tissue-epithelial junctions on the outside of the hair follicle and around the dermal papilla of normal anagen hair follicles in the human fetal scalp skin. Electron microscopic findings of dermoepidermal junction in scalp skin showed that basal lamina was very irregular and undulated, and it contained many attachment plaques of hemidesmosomes with sub-basal dense plates, tonofilaments, and anchoring filaments. Also invaginations of plasma membrane of basal keratinocytes were seen. There were clear differences both on the outside of the follicle and around the dermal papilla as compared with similar junction in the skin. In particular, neither hemidesmosomes nor tonofilaments, as seen in dermoepidermal junction, were observed in the dermal papilla. Also attachment plaque, sub-basal dense plate and anchoring filaments were not observed at the junction on the outside of the follicle and the dermal papilla. There were some differences between connective tissue-epithelial junctions on the outside of the hair follicle and around the dermal papilla, ie, smoothness of basal lamina and orthogonal arrangement of collagen fibers were seen in the outside of hair follicle, but not in the dermal papilla. These results indicate that the mechanical connection between the hair follicle and the connective tissue component is much weaker than that between the corresponding components in skin, and it reflects the dynamic processes during the anagen phase of the hair follicle compared to the relatively permanent state of the epidermis.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.108-108
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• 2002

• 대한전자공학회논문지
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• 제27권7호
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• pp.1042-1048
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• 1990

The approximations of charge relationships at normally doped semiconductor interfaces were qualitatively derived basis on electrical neutrality conditions. Effects of ion adsorptions, activation processes, interfacial structures, rectifying phenomena, and effects of surface potential barriers at the p- and n-Si/CsNO3 aqueous electrolytes, and the p-Si/(1HF:3HNO3:6H2O) electrolyte solutions were investigated using a cyclic voltammetric method. The space charge acts the most important role for the pn junction structures, the rectifying phenomena, and the activation processes. The Current-Voltage (I-V) characteristics curves significantly depend on developing of the Helmholtz double layers and charging of the show surface states during the activation processes. A linear Current-Voltage characteristics region was observed at the p-Si/(1HF:3HNO3: 6H2O) electrolyte solution interface.

• Bulletin of the Korean Chemical Society
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• 제23권1호
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• pp.71-74
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• 2002

The apparent barrier height for charge transfer through an interfacial water layer between a Pt/Ir tip and a gold surface has been measured using STM technique. The average thickness of the interfacial water layer inside an STM junction was controlled by the amount of moisture. A thin water layer on the surface was formed when relative humidity was in the range of 10 to 80%. In such a case, electron tunneling through the thin water layer became the majority of charge transfers. The value of the barrier height for the electron tunneling was determined to be 0.95 eV from the current vs. distance curve, which was independent of the tip-sample distance. On the other hand, the apparent barrier height for charge transfer showed a dependence on tip-sample distance in the bias range of 0.1-0.5 V at a relative humidity of approximately 96%. The non-exponentiality for current decay under these conditions has been explained in terms of electron tunneling and electrochemical processes. In addition, the plateau current was observed at a large tip-sample distance, which was caused by electrochemical processes and was dependent on the applied voltage.

• 반도체디스플레이기술학회지
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• 제10권4호
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• pp.61-64
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• 2011

In order to grow the crystalline solar cells industry continuously, development of alternate low-cost manufacturing processes is required. Plasma doping system is the technique for introducing dopants into semiconductor wafers in CMOS devices. In photovoltaics, plasma doping system could be an interesting alternative to thermal furnace diffusion processes. In this paper, plasma doping system was applied for phosphorus doping in crystalline solar cells. The Plasma doping was carried out in 1~4 KV bias voltages for four minutes. For removing surface damage and formation of pn junction, annealing steps were carried out in the range of $800{\sim}900^{\circ}C$ with $O_2$ ambient using thermal furnace. The junction depth in about $0.35{\sim}0.6{\mu}m$ range have been achieved and the doping profiles were very similar to emitter by thermal diffusion. So, It could be confirmed that plasma doping technique can be used for emitter formation in crystalline solar cells.

• 청정기술
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• 제28권3호
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• pp.227-231
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• 2022

고전압 전력반도체의 수요는 산업의 전반에 걸쳐 증가하고 있는 추세이며, 특히 자율주행이나 전기자동차와 같은 교통 수단에 이용되는 경우 전동차의 동력 추진 제어 장치에 3.3 kV 이상의 IGBT 모듈 부품이 사용되고 있으며, 전동차의 신설과 유지 관리에 따른 부품의 조달이 매년 증가하고 있다. 게다가 기술 진입 장벽이 매우 높은 기술로서 해당 산업계에서는 고전압 IGBT부품의 최적화 연구가 절실히 요구되고 있다. 3.3 kV 이상 고전압 IGBT 소자 개발을 위해 웨이퍼의 비저항 범위 설정과 주요 단위 공정의 최적 조건이 중요한 변수이며, 높은 항복 전압을 위한 핵심 기술로 junction depth의 확보가 무엇보다 중요하다. 최적의 junction depth를 확보하기 위한 제조 공정 중에서 단위 공정 중 한 단계인 확산 공정의 최적화를 살펴보았다. 확산 공정에서는 주입되는 가스의 종류와 시간 그리고 온도가 주요 변수이다. 본 연구에서는 단위 공정의 시뮬레이션을 통하여 고전압 IGBT 소자 개발을 위한 웨이퍼 저항의 (Ω cm) 범위를 설정하고, 확산 공정의 온도에 따른 확산 공정의 WDR(Well drive in) 조건 최적화에 대하여 연구한 결과 링 패턴의 width 23.5 ~ 25.87 ㎛에 대하여 junction depth는 7.4 ~ 7.5 ㎛를 얻어 3.3 kV 고전압 전력반도체 지지에 최적화할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.30-33
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• 2004

Shallow p+-n junctions were formed by low-energy ion implantation and dual-step annealing processes The dopant implantation was performed into the crystalline substrates using $BF_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth. A new simulator is designed to model boron diffusion in silicon, which is especially useful for analyzing the annealing process subsequent to ion implantation. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using a resonable parameter values, the simulator covers not only the equilibrium diffusion conditions but also the nonequilibrium post-implantation diffusion. Using initial conditions and boundary conditions, coupled diffusion equation is solved successfully. The simulator reproduced experimental data successfully.

• Journal of Ginseng Research
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• 제30권2호
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• pp.64-69
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• 2006

Gap junctional channels, allowing rapid intercellular communication and synchronization of coupled cell activities, play crucial roles in many signaling processes, including a variety of cell activities. Consequently, a modulation of the gap junctional intercellular communication (GJIC) should be a potential pharmacological target. In the present, the GJIC of a epithelial-derived rat mammary cells (BICR-M1Rk) was assessed in the presence of ginseng saponin, by using an established method of scrape-loading dye transfer assay. The transfer of Lucifer yellow (diameter: 1.2 nm) among the neighboring BICR-M1Rk cells, in which connexin43 (Cx43) is a major gap junction channel-forming protein, was significantly retarded at a concentration of $10{\mu}g/ml$ ginseng saponin. By using both methods of RT-PCR and Western blotting, it was demonstrated that ginseng saponin modulated neither the mRNA synthesis of Cx43 nor the translational process of Cx43. This ginseng saponin-induced modification of GJIC was a similar phenomenon observed under the $\beta$-glycyrrhetinic acid treatment, a well-known gap junction channel blocker. Taken together, it is reasonable to conclude that the ginseng saponin inhibits GJIC only by modulating the gating property of gap junction channels.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.905-909
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• 2009

The new Junction Field Effect Transistors (JFETs) with Silicon-germanium (SiGe) layers is investigated. This structure uses SiGe layer to prevent out diffusion of boron in the channel region. In this paper, we report electrical properties of SiGe JFET measured under various design parameters influencing the performance of the device. Simulation results show that out diffusion of boron is reduced by the insertion SiGe layers. Because the SiGe layer acts as a barrier to prevent the spread of boron. This proposed JFET, regardless of changes in fabrication processes, accurate and stable cutoff voltage can be controlled. It is easy to maintain certain electrical characteristics to improve the yield of JFET devices.

• 한국초전도ㆍ저온공학회논문지
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• 제4권1호
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• pp.1-3
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• 2002

Single Josephson junctions, which are of cross type, of $50 ${\mu}{\textrm}{m}$ {\times} 50 ${\mu}{\textrm}{m}$$ were fabricated under several oxidation conditions to Investigate controllabilities of critical current density (Jc) with the standard KRISS processes. Considering that the self-field effect suppresses the observed critical current (Ice) at high Jc region, we could reasonably estimate Jc values from I-V observations. The dependence of the obtained Jc as a function of exposure, which is equal to pressure (P) times time (t), was well fitted to a curve of Jc ~ (Pt)-0.34. The maximum Jc value at the controllability margin was found to be 3 kA/cm$^2$with the current equipment set up.