• 한국콘크리트학회:학술대회논문집
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• 한국콘크리트학회 2004년도 춘계 학술발표회 제16권1호
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• pp.420-422
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• 2004

This paper reports the results of performance verification tests of the base isolated RC building with the laminated rubber bearings which is manufactured by Dongil Rubber Belt Co.. The shaking table tests were performed using a scaled 3-story model scaled to 1/3 of the prototype RC apartment building. Several major earthquake records were scaled to different peak ground accelerations and used as input base excitations. Through the verification tests, the validity of the applied base isolation device and the response reduction effect against earthquakes are confirmed.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.17-20
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• 2000

This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\sub$p/ (projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.806-808
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• 1992

This paper describes a buried-island SOI MOSFET structure which can reduce the edge channel effect by improving the interface properties at the side wall of active island and by reducing the strength of electric field applied at the upper corner of the side wall from the gate. Also, the buried-island SOl structure can obtain the uniform thickness of SOl film. The buried-island structure can be achieved by Zone- Melting-Recrystallization of polysilicon and polishing. Both simulated and experimental results show that the buried-island SOl NMOSFET has less edge channel effect than the conventional SOl NMOSFET using LOCOS or mesa isolation technique.

• Transactions on Electrical and Electronic Materials
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• 제14권3호
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• pp.116-120
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• 2013

This paper proposes a novel RF MEMS dc-contact switch with stiff membrane on a quartz substrate. The uniqueness of this work lies in the utilization of a seesaw mechanism to restore the movable part to its rest position. The switching action is done by using separate pull-down and pull-up electrodes, and hence operation of the switch does not rely on the elastic recovery force of the membrane. One of the main problems faced by electrostatically actuated MEMS switches is the high operational voltages, which results from bending of the membrane, due to internal stress gradient. This is resolved by using a stiff and thick membrane. This membrane consists of flexible meanders, for easy movement between the two states. The device operates with an actuation voltage of 6.43 V, an insertion loss of -0.047 dB and isolation of -51.82 dB at 2 GHz.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 1998년도 춘계학술대회논문집; 용평리조트 타워콘도, 21-22 May 1998
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• pp.302-307
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• 1998

In the production of semiconductor wafer, optical and electron microscopes, ion-beam, laser device must maintain their alignments within a sub-micrometer. This equipment requires a vibration free environment to provide its proper function. Especially, lithography and inspection devices, which have sub-nanometer class high accuracy and resolution, have come to necessity for producing more improved giga and tera class semiconductor wafers. This high technology equipments require very strict environmental vibration standard, vibration criteria, in proportion to the accuracy of the manufacturing, inspecting devices. The vibration criteria of high sensitive equipment should be represented in the form of exactness and accuracy, because this is used as basic data for the design of building structure and structural dynamics of equipment. The study on the evaluation of the factors affecting the permissible vibration criteria is required to design the efficient isolation system of the semiconductor manufacturing of equipment. This paper deals with the properties of the effected factor for vibration criteria of high sensitive equipment.

• 조명전기설비학회논문지
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• 제25권7호
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• pp.32-39
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• 2011

FPS(Filament Power Supply), one of the KSTAR NBI(Neutral Beam Injections) is implemented by full-bridge DC/DC converter. NBI heating device for KSTAR(1.5MW) is developed for heating an ion source of plasma in KSTAR tokmak. The full-bridge DC/DC converter is applied to FPS for isolation with input and output. And FPS is operated with PWM control method which is the most usual method. In this paper, NBI FPS of 4.8kW is simulated by using the PSIM 6.0. And the full-bridge DC/DC converter using IGBTs is fabricated to demonstrate it. The processor DSP 28335 is implemented for digital control.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.977-982
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• 2000

Conventional transistors which have vertical structure show increased parasitic capacitance characteristics in accordance with the increase of non-active base area and collector area. These consequently have disadvantage for high speed switching performance. In this paper, a lateral structure transistor which has minimized parasitic capacitance by using SDB(Silicon Direct Bonding) wafer and oxide sidewall isolation utilizing silicon trench technology is presented. Its structural characteristics are designed by ATHENA(SUPREM4), the process simulator from SILVACO International, and its performance is proven by ATLAS, the device simulator from SILVACO International. The performance of the proposed lateral structure transistor is certified through the V$\_$CE/-I$\_$C/ characteristics curve, h$\_$FE/-I$\_$C/ characteristics, and GP-plot. Cutoff Frequency is 13.7㎓.

• 한국컴퓨터정보학회:학술대회논문집
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• 한국컴퓨터정보학회 2015년도 제51차 동계학술대회논문집 23권1호
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• pp.307-308
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• 2015

The biggest challenge of managing mobile interpretative device is encouraging visitors to have the mobile experience. Thus, in the research of the mobile application of the Leeum, a short orientation session as a treatment was provided to survey participants to make them use of a mobile experience and to solve the problem of hesitancy. Based on the research data, their satisfaction with visiting experience and with using the application appeared to be relatively high. However, several problems such as intrusiveness, isolation, head-down effect and technical problems needed to be improved to have a promising future.

• 대한임베디드공학회논문지
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• 제8권3호
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• pp.145-153
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• 2013

Virtualization technology has been applied in IA-32 based server or desktop systems. Recently it has been applied in ARM based mobile systems. Virtualization technology provides many useful features that are not possible in operating system level such as isolation, interposition, encapsulation and portability. In this research, we implement an ARM based VMM(Virtual Machine Monitor) by using the following techniques. First, we use "emulation" to virtualize the processor. Second, we use "shadow page tables" to virtualize the memory. Finally, we use a simple "pass-through I/O" to virtualize the device. Currently the VMM runs ARM Linux kernel 3.4.4 on a BeagleBoard-xM, and we evaluated the performance of the VMM using lmbench and dhrystone. The result of the evaluation shows that our VMM is slower than Xen on ARM that is implemented using paravirtualization but has good performance among the VMMs using full-virtualization.

• 대한전기학회논문지
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• 제41권4호
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• pp.369-378
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• 1992

This paper proposes a utility parallel processing inverter system, which consists of a voltage source PWM inverter, isolation transformer and a reactor linking the inverter to utility line. This system realizes following functions : (1) voltage phase frequency and amplitude synchronization between inverter and utility line at stand-alone mode. (2) current phase synchronization between inverter and load at parallel mode. Therefore, despite sudden increase in load current over setting point at stand-alone mode, inverter system can be transferred into parallel mode immediately without transient current. Furthermore, high frequency(18KHz) PWM control and sinusoidal filtering improve the inverter output waveform by eliminating high order harmonic components as well as low order. As a switching device, IGBT is used for high frequency switching and large current capacity.