• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2005년도 Proceedings of The 6th korea-china joint workshop on nuclear waste management
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• pp.300-315
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• 2005

Recently plasma surface-cleaning or surface-etching techniques have been focused in the respect of decontamination of spent or used nuclear parts and equipment. In this study decontamination rate of metallic cobalt surface was experimentally investigated via its surface etching rate with a $CF_4-O_2$ mixed gas plasma and metallic surface wastes of cobalt oxides were simulated and decontaminated with $NF_3$ - Ar mixed gas plasma. Experimental results revealed that a mixed etchant gas with about $80{\%}\;CF_4-20{\%}\;O_2$ gives the highest reaction rate of cobalt disk and the rate reaches with a negative 300 DC bias voltage up to $0.43\;{\mu}m$/min at $380^{\circ}C$ and $20{\%}\;NF_3-80\%$ Ar mixed gas gives $0.2\;{\mu}m$/min of reaction rate of cobalt oxide film.

• 통합자연과학논문집
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• 제10권2호
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• pp.65-73
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• 2017

In this review paper, we will discuss about the methods of synthesizing Si nanowires by Top-down and Bottom-up. Silicon nanowires have a lot of application on various fields such as Li ion batteries, solar cells, chemical and biological sensors. We will address some of the applications of silicon Nanowires.

• 한국광학회:학술대회논문집
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• 한국광학회 2006년도 동계학술발표회 논문집
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• pp.165-166
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• 2006

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 추계학술대회 논문집 전기물성,응용부문
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• pp.322-325
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• 2003

BST thin films were etched with inductively coupled plasmas. A chemically assisted physical etch of BST was experimentally confirmed by ICP under various gas mixtures. After a 20 % addition of $BCl_3$ to the $Cl_2/Ar$ mixture, resulting in an increased the chemical effect. As a increases of RF power, substrate power, and substrate temperature, and decrease of working pressure, the ion energy flux and chlorine atoms density increased. The maximum etch rate of the BST thin films was 90.1 nm/min at the RF power, substrate power, working pressure, and substrate temperature were 700 W, 300 W, 1.6 Pa, and 20 $^{\circ}C$, respectively. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching product.

• Transactions on Electrical and Electronic Materials
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• 제13권3호
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• pp.144-148
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• 2012

In this work, we investigated to the etching characteristics of $TiO_2$ thin film and the selectivity using the inductively coupled plasma system. The etch rate and the selectivity were obtained with various gas mixing ratios. The maximum etch rate of $TiO_2$ thin film was 61.6 nm/min. The selectivity of $TiO_2$ to TiN, and $TiO_2$ to $SiO_2$ were obtained as 2.13 and 1.39, respectively. The etching process conditions are 400 W for RF power, -150 V for DC-bias voltage, 2 Pa for the process pressure, and $40^{\circ}C$ for substrate temperature. The chemical states of the etched surfaces were investigated with X-ray photoelectron spectroscopy (XPS). Its analysis showed that the etching mechanism was based on the physical and chemical pathways in the ion-assisted physical reaction.

• 한국표면공학회지
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• 제41권5호
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• pp.189-193
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• 2008

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$ and $HfO_2$) of TiN thin films in the $CH_4$/Ar inductively coupled plasma. The maximum etch rate of $274\;{\AA}/min$ for TiN thin films was obtained at $CH_4$(80%)/Ar(20%) gas mixing ratio. At the same time, the etch rate was measured as function of the etching parameters such as RF power, Bias power, and process pressure. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CH_4$ containing plasmas.

• Transactions on Electrical and Electronic Materials
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• 제8권6호
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• pp.229-233
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• 2007

In this study, we carried out an investigation of the etching characteristics(etch rate, selectivity) of $HfO_2$ thin films in the $CH_4/Ar$ inductively coupled plasma. It was found that variations of input power and negative dc-bias voltage are investigated by the monotonic changes of the $HfO_2$ etch rate as it generally expected from the corresponding variations of plasma parameters. At the same time, a change in either gas pressure or in gas mixing ratio result in non-monotonic etch rate that reaches a maximum at 2 Pa and for $CH_4(20%)/Ar(80%)$ gas mixture, respectively. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CH_4-containing$ plasmas.

• Journal of Electrochemical Science and Technology
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• 제2권3호
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• pp.157-162
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• 2011

We report a simple route for synthesizing multi-dimensional structured silicon anode materials from commercially available bulk silicon powders via metal-assisted chemical etching process. In the first step, silver catalyst was deposited onto the surface of bulk silicon via a galvanic displacement reaction. Next, the silver-decorated silicon particles were chemically etched in a mixture of hydrofluoric acid and hydrogen peroxide to make multi-dimensional silicon consisting of one-dimensional silicon nanowires and micro-scale silicon cores. As-synthesized silicon particles were coated with a carbon via thermal decomposition of acetylene gas. The carbon-coated multi-dimensional silicon anodes exhibited excellent electrochemical properties, including a high specific capacity (1800 mAh/g), a stable cycling retention (cycling retention of 89% after 20 cycles), and a high rate capability (71% at 3 C rate, compared to 0.1 C rate). This process is a simple and mass-productive (yield of 40-50%), thus opens up an effective route to make a high-performance silicon anode materials for lithiumion batteries.

• 한국광학회지
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• 제8권2호
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• pp.149-153
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• 1997

InGaAsP/InP 격자도움형 방향성 결합기(GACC)필터를 제작하고, 필터의 도파로 구조에 대해서 중심파장, 파장대역폭, TE/TM 편광의존성 그리고 파장가변특성 등을 측정하였다. 필터가 좁은 파장대역폭을 갖도록 도파로의 구조를 설계하였다. 균일한 두께와 폭을 갖는 도파로를 제작하기 위해 reactive ion etching 방법을 이용하였다. 제작된 InGaAsP/InP GACC 필터의 출력 스펙트럼은 TM편광에서 1494.0 nm의 중심파장과 1.3 mn의 파장대역폭을 가졌고, TE편광에서는 1530.6 nm의 중심파장과 1.5 nm의 파장대역폭을 보였다. 이 파장대역폭은 지금까지 보고된 1.5mu.m파장대역 부근에서 GACC필터가 갖는 대역폭 중 가장 좁은 것이다. 또한 100 mA의 전류인가에 대한 8 nm정도의 중심파장 이동을 관찰하였다. 그리고 제작된 여러 가지 도파로 구조에 대해 측정한 GACC필터의 동작특성과 계산한 결과가 잘 일치함을 보였다.

• 한국산학기술학회논문지
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• 제16권12호
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• pp.8679-8683
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• 2015

세라믹은 고온에서 뛰어난 내마모성, 내부식성을 가지기 때문에 산업적 응용에 있어서 널리 사용된다. 세라믹은 금속과 비교해서 고온에서 더 큰 강도를 가지고 있고, 더 낮은 열전도도 및 열팽창 계수를 가진다. 그러나, 세라믹이 가진 취성의 성질은 전기전자산업과 고온에서의 구조적 적용에의 넓은 적용을 제한한다. Ti 활성금속과 STS304를 IBAD 기술을 이용해서 동시에 증착시켜 STS304 스테인레스강에 $Al_2O_3$(알루미나)의 브레이징 접합강도에 어떤 영향을 미치는지 알아보았으며, 시험편들은 Ti 타겟과 Ti+ STS304 타겟 두 종류를 이용하여 두께를 변화시켜가며 증착하였다. 브레이징 접합을 위한 삽입금속으로는 일반적으로 사용되는 Ag-Cu 공정조성의 합금이 사용되었다. 브레이징 접합품의 강도는 Ag-Cu 삽입금속과 알루미나 사이의 반응층의 두께와 반응 생성물 조직에 의해 결정되며, 본 실험에서는 계면 반응의 메커니즘을 보다 구체화하고 계면 반응에 의한 경사기능성의 접합계면을 더욱 향상시키는 결과를 얻고자 한다.