Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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The Etch Characteristics of TiN Thin Film Surface in the CH4 Plasma

CH4 플라즈마에 따른 TiN 박막 표면의 식각특성 연구

  • Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Um, Doo-Seung (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Gwan-Ha (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Dong-Pyo (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
  • 우종창 (중앙대학교 전자전기공학부) ;
  • 엄두승 (중앙대학교 전자전기공학부) ;
  • 김관하 (중앙대학교 전자전기공학부) ;
  • 김동표 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부)
  • Published : 2008.10.31
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Abstract

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$ and $HfO_2$) of TiN thin films in the $CH_4$/Ar inductively coupled plasma. The maximum etch rate of $274\;{\AA}/min$ for TiN thin films was obtained at $CH_4$(80%)/Ar(20%) gas mixing ratio. At the same time, the etch rate was measured as function of the etching parameters such as RF power, Bias power, and process pressure. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CH_4$ containing plasmas.

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References

  1. A. Le Gouil, O. Joubert, G. Cunge, T. Chevolleau, L. Vallier, J. Vac. Sci. Tech. B, 25(3) (2007) 767-778 https://doi.org/10.1116/1.2732736
  2. G. H. Kim, K. T. Kim, J. C. Woo, C. I. Kim, Ferroelectrics, 357(1) (2007) 41-47 https://doi.org/10.1080/00150190701527605
  3. W. T. Chang, T. E. Hsieh, C. J. Lee, J. Vac. Sci. Technol. B, 25 (2007) 1265-1269 https://doi.org/10.1116/1.2752516
  4. S. M. Sze, VLSI Technology, New York, McGraw- Hill Book Company (1983) 106
  5. R. H. Dennard, F. H. Gaensslen, H. N. Yu, N. Rideout, E. Bessous, and A. R. Leblanc, IEEE J. Solid State Circuits., SC-9 (1974) 256
  6. W. S. Hwang, J. H. Chen, W. J. Yoo, V. Bliznetsov, J. Vac. Sci. Technol. A, 23(4) (2005) 964-970 https://doi.org/10.1116/1.1927536
  7. K. B. Jung, H. Cho, Y. B. Hahn, D. C. Hays, E. S. Lambers, Y. D. Park, T. Feng, J. R. Childress, S. J. Pearton, J. Vac. Sci. Technol. A, 17(4) (1999) 2223-2227 https://doi.org/10.1116/1.581751
  8. D. R. Lide, "Handbook of Chemistry", CRC Press, 2004 10(3)-10(15)
  9. B. Y. Jeong, M. S. Hwang, C. M. Lee, and M. H. Kim, J. Kor. Inst. Met & Mater., 38(6) (2000) 823-828