• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• ETRI Journal
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• v.30 no.3
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• pp.383-393
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• 2008

The etching mechanism of $ZrO_2$ thin films and etch selectivity over some materials in both $BCl_3$/Ar and $BCl_3/CHF_3$/Ar plasmas are investigated using a combination of experimental and modeling methods. To obtain the data on plasma composition and fluxes of active species, global (0-dimensional) plasma models are developed with Langmuir probe diagnostics data. In $BCl_3$/Ar plasma, changes in gas mixing ratio result in non-linear changes of both densities and fluxes for Cl, $BCl_2$, and ${BCl_2}^+$. In this work, it is shown that the non-monotonic behavior of the $ZrO_2$ etch rate as a function of the $BCl_3$/Ar mixing ratio could be related to the ion-assisted etch mechanism and the ion-flux-limited etch regime. The addition of up to 33% $CHF_3$ to the $BCl_3$-rich $BCl_3$Ar plasma does not influence the $ZrO_2$ etch rate, but it non-monotonically changes the etch rates of both Si and $SiO_2$. The last effect can probably be associated with the corresponding behavior of the F atom density.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.80-90
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• 1994

To develop VLSI of higher packing density with 0.5.mu.m gate length of less, semiconductor devices require shallow junction with higher doping concentration. the most common method to form the shallow junction is ion implantation, but in order to remove the implantation induced defect and activate the implanted impurities electrically, ion-implanted Si should be annealed at high temperature. In this annealing, impurities are diffused out and redistributed, creating deep PN junction. These make it more difficult to form the shallow junction. Accordingly, to miimize impurity redistribution, the thermal-budget should be kept minimum, that is. RTA needs to be used. This paper reports results of the diffusion characteristics of PSG film by varying Phosphorus weitht %/ Times and temperatures of RTA. From the SIMS.ASR.4-point probe analysis, it was found that low sheet resistance below 100 .OMEGA./ㅁand shallow junction depths below 0.2.mu.m can be obtained and the surface concentrations are measured by SIMS analysis was shown to range from 2.5*10$^{17}$ aroms/cm$^{3}$~3*10$^{20}$ aroms/cm$^{3}$. By depending on the RTA process of PSG film on Si, LDD-structured nMOSFET was fabricated. The junction depths andthe concentration of n-region were about 0.06.mu.m. 2.5*10$^{17}$ atom/cm$^{-3}$ , 4*10$^{17}$ atoms/cm$^{-3}$ and 8*10$^{17}$ atoms/cm$^{3}$, respectively. As for the electrical characteristics of nMOS with phosphorus junction for n- region formed by RTA, it was found that the characteristics of device were improved. It was shown that the results were mainly due to the reduction of electric field which decreases hot carriers.

• Journal of the Korean Chemical Society
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• v.24 no.4
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• pp.295-301
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• 1980

The electrical conductivity of solid electrolyte $RbAg_4I_5$ single crystal was studied at various temperatures. The four-probe method was used in measuring the conductance with an ac signal imposed on the specimen. The ionic conductivity was $0.284 ohm^{-1} cm^{-1}\;at\;25^{\circ}C$, and the activation energy for $Ag^+$ ion migration was calulated to be 1.70 kcal/mole. These values agree well with those reported for polycrystalline samples. Reactions at $Ag/RbAg_4I_5$ interface were studied by cyclic voltammetry with a silver reference electrode. It was found that silver ion is reversibly reduced at silver surfaces below zero volt, and iodide was oxidized above +0.67 volt.The anodic current arising from the oxidation of the electrode was small in magnitude initially over a wide range of potential, but, after silver was cathodically deposited on the electrode, reversing the potential sweep to the anodic direction resulted in a sharp peak of anodic current.

• Journal of Sensor Science and Technology
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• v.18 no.2
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• pp.173-178
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• 2009

In this study, we have fabricated a fiber-optic dosimeter using an organic scintillator and a plastic optical fiber for measuring percentage depth dose with high energy X-ray beam. The scintillating light generated in organic sensor probe embedded in a solid water are guided by 20 m plastic optical fiber to the light-measuring device such as a photodiode- amplifier system. Using a fiber-optic dosimeter and an ion chamber, percentage depth dose curves are measured with 6 and 15 MV energies of X-ray beam whose field sizes are $2\;cm\;{\times}\;2\;cm$ and $10\;cm\;{\times}\;10\;cm$.

• Journal of Technologic Dentistry
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• v.35 no.2
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• pp.137-142
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• 2013

Purpose: This study was to observe the surface and interfacial characteristic of Zirconia by surface treatment. And it was observed the roughness and contact angle according to processing, and the interfacial properties by surface treatment on zirconia. Methods: The oxide formation and ion diffusion between core and veneer ceramic were determined by the X-ray Dot Mapping of EPMA(Electron probe micro analyzer). The roughness was measured by 3D Digital microscope and the contact angle according to processing of zirconia was observed using distilled water on the surface. Results: The surface roughness of the specimens Z04, Z12, Z15 was measured $0.67({\pm}0.03){\mu}m$, $0.50({\pm}0.12){\mu}m$, $0.35({\pm}0.09){\mu}m$, respectively. As results of contact angle test, Z04, Z12, Z15 of specimen group without binder treatment was measured $46.79({\pm}3.17)^{\circ}$, $57.47({\pm}4.83)^{\circ}$, $56.19({\pm}2.66)^{\circ}$, respectively. but, L04, L12, L15 of specimen group without binder treatment was measured $63.84({\pm}2.20)^{\circ}$, $66.08({\pm}0.16)^{\circ}$, $65.10({\pm}1.01)^{\circ}$, respectively. Average contact angle of L15 was measured $65.10({\pm}1.01)^{\circ}$. In X-ray Dot Mapping results, thickness of binder including Al element was measured that each of L04, L12, L15 were $20{\mu}m$, $15{\mu}m$, $10{\mu}m$. Conclusion: The more rough surface increases the wettability, but the sintered exclusive binder decreases the wettability.

• Journal of the Korean Ceramic Society
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• v.24 no.2
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• pp.123-132
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• 1987

Yttria-stabilized zirconia with erbia-lanthana were investigated with respect to the amount of Ln2O3 (Ln; Er, La) addition in the range of 0.5∼5 mol% to the base composition of 8 mol% yttriazirconia. Following analysis and measurement were adopted for the characterization of synthesizes of solid electrolyte; phase transformation, lattice parameter, crystallite size, relative density, chemical composition and SEM/EDS. Electrical conductivity by two-probe method versus temperature from 350$^{\circ}C$ to 800$^{\circ}C$ and frequency in the range of 5Hz∼13MHz by complex impedance method was also conducted together with the determination of oxygen ion transference number by EMF method for the evaluation of their electrical properties. The results were as followsing; Electrical conductivity were decreased with increase in Ln2O3 content, but their activation energies increased. In the case of La2O3 addition, espicially, its electrical conductivity was decreased owing to the segregation of second phases at the grain-boundary. Grain-boundary conductivity of the specimen contained 0.5 mol% Er2O3 exhibited a maximum conductivity among thecompositions experimented. However, their bulk conductivities decreased in both case. Oxygen ion transference number was also reduced with decrease in oxygen partial pressure. For example, in the case of Er2O3 addition it retained value in the range of 0.97∼0.94 abvove 4.74${\times}$10-2in oxygen partial pressure. With the increase in the quantities of the evaporation of additive components, the crystallite size of stabilized zirconia decreased, and their relative density also reduced owing to the formation of porosity in their matrices. In the case of La2O3 the sinterbility was improved in the limited amount of addition up to 0.5 mol%, in the same range of addition the strength of sintered bodies were improved perhaps owing to the precipitation of metastable tetragonal phase in the fully stabilized zirconia.

• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.27-33
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• 2003

Pulsed magnetron sputtering of graphite target was employed for deposition of diamond-like carbon (DLC) films. Time-resolved probe measurements of magnetron discharge plasma have been performed. It was shown that the pulsed magnetron discharge plasma density ($∼10^{17}$ $m^{-3}$ ) is close to that of vacuum arc cathode sputtering of graphite. Raman spectroscopy was sed to examine DLC films produced at low ( $U_{sub}$ / < 1 kV) pulsed bias voltages applied to the substrate. It has been shown that maximum content of diamond-like carbon in the coating (50-60%) is achieved at energy per deposited carbon atom of $E_{c}$ =100 eV. In spite of rather high percentage of $sp^3$-bonded carbon atoms and good scratch-resistance, the films showed poor adhesion because of absence of ion mixing between the film and the substrates. Electric breakdowns occurring during the deposition of the insulating DLC film also thought to decrease its adhesion.

• Corrosion Science and Technology
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• v.18 no.5
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• pp.206-211
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• 2019

Silicon carbide (SiC) thin films become superhard when they have microstructures of nanocolumnar crystalline grains (NCCG) with an intergranular amorphous SiC matrix. We investigated the role of ion bombardment and deposition temperature in forming the NCCG in SiC thin films. A direct-current (DC) unbalanced magnetron sputtering method was used with pure Ar as sputtering gas to deposit the SiC thin films at fixed target power of 200 W and chamber pressure of 0.4 Pa. The Ar ion bombardment of the deposited films was conducted by applying a negative DC bias voltage 0-100 V to the substrate during deposition. The deposition temperature was varied between room temperature and $450^{\circ}C$. Above a critical bias voltage of -80 V, the NCCG formed, whereas, below it, the SiC films were amorphous. Additionally, a minimum thermal energy (corresponding to a deposition temperature of $450^{\circ}C$ in this study) was required for the NCCG formation. Transmission electron microscopy, Raman spectroscopy, and glancing angle X-ray diffraction analysis (GAXRD) were conducted to probe the samples' structural characteristics. Of those methods, Raman spectroscopy was a particularly efficient non-destructive tool to analyze the formation of the SiC NCCG in the film, whereas GAXRD was insufficiently sensitive.

• Nuclear Engineering and Technology
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• v.54 no.1
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• pp.207-219
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• 2022

The suppression of high-intensity blob structures in the scrape-off layer (SOL) by ion-cyclotron range of frequencies (ICRF) power, leading to a decrease in the turbulent fluctuation level, is observed first in the Experimental Advanced Superconducting Tokamak (EAST) experiment. This suppression effect from ICRF power injection is global in the whole SOL at EAST, i.e. blob structures both in the regions that are magnetically connected to the active ICRF launcher and in the regions that are not connected to the active ICRF launcher could be suppressed by ICRF power. However, more ICRF power is required to reach the full blob structure suppression effect in the regions that are magnetically unconnected to the active launcher than in the regions that are magnetically connected to the active launcher. Studies show that a possible reason for the blob suppression could be the enhanced E_r × B shear flow in the SOL, which is supported by the shaper radial gradient in the floating potential profiles sensed by the divertor probe arrays with increasing ICRF power. The local RF wave power unabsorbed by the core plasma is responsible for the modification of potential profiles in the SOL regions.