• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.35 no.2
• /
• pp.62-66
• /
• 1986

Ion beam etching of silicon with N2 and Ar gas has been found to cause the band edge to bend downward near the surface in p-type silicon. Rectifying, rather than ohmic contacts are obtained on the structures formed by evaporation of gold and titanium onto ion-bean-etched p-type silicon. The 1/C2 versus V relationship measured at 1MHz is found to be nonlinear for small voltages indicating alteration of the effective doping colse to the silicon surface.

• 한국초전도학회:학술대회논문집
• /
• v.11
• /
• pp.50-50
• /
• 2001

• Polymer(Korea)
• /
• v.26 no.6
• /
• pp.718-727
• /
• 2002

In this work, an Ar+ beam was irradiated on carbon fiber surfaces to improve the interfacial shear strength (IFSS) of the resulting composites using an ion assisted reaction (IAR) method h single fiber pull-out test was executed to investigate the basic characteristics of the single Carbon fiber/matrix interface. Based on Greszczuk's geometrical model, the debonding force for pull-out of the fiber from the resins was discussed with the applied ion beam energy as a result, it was known that an ion beam treatment produced the functional groups on fiber surface and etching lines along the fiber axis direction, resulting in increasing the adhesion forces between fibers and matrix, which caused the improvement of the IFSS in a composite system. And, it was also found that the maximum IFSS was shown at 0.8 keV ion beam energy in this system.

• Journal of the Korean Society for Precision Engineering
• /
• v.29 no.4
• /
• pp.479-486
• /
• 2012

Two of fundamental approaches that can be used to understand ion-solid interaction are Monte Carlo (MC) and Molecular Dynamic (MD) simulations. For the simplicity of simulation Monte Carlo simulation method is widely preferred. In this paper, basic consideration and algorithm of Monte Carlo simulation will be presented as well as simulation results. Sputtering caused by incident ion beam will be discussed with distribution of sputtered particles and their energy distributions. Redeposition of sputtered particles that are experienced refraction at the substrate-vacuum interface additionally presented. In addition, reflection of incident ions with reflection coefficient will be presented together with spatial and energy distributions. This Monte Carlo simulation will be useful in simulating and describing ion beam related processes such as Ion beam induced deposition/etching process, local nano-scale distribution of focused ion beam implanted ions, and ion microscope imaging process etc.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.04a
• /
• pp.72-75
• /
• 2002

Magnetoresistance (MR) of mumetal/Co/Co/Co multilayer is measured as a function of surface etching on the top Co layer by ion beam etching system. As the etching process proceeds, Co thickness and roughness decreases. MR is dominantly affected by Co layer thickness, but surface roughness makes no significant effect on the MR of mumetal/Co/Cu/Co multilayer.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2002.12a
• /
• pp.224-225
• /
• 2002

강자성체의 스핀 분극을 이용하는 스핀트로닉스에 대한 연구는 매우 활발히 이루어지고 있다. CoFe 합금은 큰 포화자화와 스핀분극 때문에 스핀트로닉스 재료로 널리 이용되고 있다. 본 연구에서는 Ion Beam Etching 방법으로 CoFe 박막을 미세 가공 할 때 에칭 조건에 따른 CoFe 박막의 자기적 특성 변화를 조사하였다. 에칭 변수가 에칭에 미치는 영향을 사전에 조사하기 위하여 Cu 박막에 대하여 에칭시간, 기울임 각도, 가속 전압을 변화시키면서 식각한 후 거칠기 변화를 조사하였다. (중략)

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.30 no.3 s.246
• /
• pp.328-333
• /
• 2006

Movable nanometer-scale structures are fabricated by selective etching of single crystalline Au nanoplates. The nanostructures have arbitrary shapes like gear and alphabet 'A' with in-plane size less than 500 m and thickness of $25\sim60nm$. They could be moved successfully on the substrate using a nanornanipulator installed in a focused ion beam system. Our approach is expected to be useful in fabricating various kinds of nanocomponents which can play a role as building blocks for the sophisticated nanodevices or micromachines.

• Electrical & Electronic Materials
• /
• v.7 no.5
• /
• pp.425-429
• /
• 1994

In this paper, we study on the plasma polymerized styrene as a negative electron-beam resist. Plasma polymerized thin film was prepared using an interelectrode inductively coupled gas-flow type reactor. We show that polymerization parameters of thin film affect sensitivity and etching resistance of the resist. Molecular weight distribution of plasma polymerized styrene is 1.41-3.93, and deposition rates of that are 32-383[.angs./min] with discharge power. Swelling and etching resistance becomes . more improved with increasing discharge power during plasma polymerization. Etch rate by RIE is higher than that by plasma etching.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2008.06a
• /
• pp.365-366
• /
• 2008

• Journal of the Korean Society for Precision Engineering
• /
• v.28 no.2
• /
• pp.245-250
• /
• 2011

A high-resolution shadow mask, a nanostencil, is widely used for high resolution lithography. This high-resolution shadowmask is often fabricated by a combination of MEMS processes and focused ion beam (FIB) milling. In this study, FIB milling on 500-nm-thin SiN membrane was tested and characterized. 500 nm thick and $2{\times}2$ mm large membranes were made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. A subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to the high resolution of the FIB milling process, nanoscale apertures down to 60 nm could be made into the membrane. The nanostencil could be used for nanoscale patterning by local deposition through the apertures.