• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.254-257
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• 2008

We have investigated the effect of source/drain electrode deposition method on a performance of top gate structured ZnO TFT performance. TFT using S/D of ITO film, consisted of bi-layer which deposited by ion beam assisted sputtering at the initial stage then deposited by DC magnetron sputtering, showed better performance compared to that using S/D of ITO deposited by just DC magnetron sputtering. Two ITO films exhibited different grain shapes and these resulted in different etching properties. We also suspect that charge trapping on the glass substrate (back channel) during the ITO film deposition may influence the characteristics of top gate structured ZnO TFT.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1037-1040
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• 2003

본 논문에서는 microcolumn 을 위한 초소형 전자빔 deflector 의 제작방법과 microcolumn array 에서 deflector 의 외부 패드를 최소화 할 수 있는 새로운 배선방법을 기술하였다. 배선의 통로 및 절연체 역할을 하는 Pyrex glass 의 양쪽에 각각 실리콘 웨이퍼의 양극접합 및 deep reactive ion etching(DRIE)과 금속 전기 도금을 이용하여 다층배선을 하였다. 이 배선방법을 이용하면 microcolumn array 가 수백개가 되더라도 deflector 의 외부 패드는 항상 8개를 유지할 수 있다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.11
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• pp.70-75
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• 1997

a wavelength division multiplexer based on a polymeric arrayed-waveguide grating has been designed and fabricated. A 4-channel multiplexer with a spacing of 3.2 nm is designe dby using te 2-dimensional beam propagation method. A UV-curable epoxy, NOA73, is used for the core layer, and a passive polymer, PMMA, for the cladding layer. The polymer waveguides are fabricated by the reactive ion etching method and their optical properties are characterized. The fabricted device has a center wavelength of 1548.3 nm, and the wavelength spacing between the channels is 3.2nm. The measured crosstalk is better than -18dB.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.241-241
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• 2015

플라즈마 건식 식각 기술은 반도체 식각공정에서 효과적으로 이용되고 있으며, 반도체 소자의 크기가 줄어듬에 따라 미세하고 정확하게 식각 깊이를 제어 할 수 있는 원자층 식각기술 많은 관심을 받고 있다. 실리콘을 대체 할 수 있는 우수한 전기적 특성을 가진 III-V 화합물 반도체 재료인 InGaAs에 대한 원자층 식각을 통하여, 흡착가스에 대한 표면흡착 및 탈착가스에 대한 표면탈착 메커니즘을 고찰하였다. 또한, 성분 및 표면분석 장치를 이용하여 InGaAs 원자층 식각 특성에 대해 연구하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.546-547
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• 2002

Ni thin film on the PMN-PT crystal wafer were deposited by using E-beam evaporator technique. Deposited film was patterned by UV-lithography and etching and was in-diffused at 300~600C. Diffusion profile of Ni ions in PMN-PT was measured by secondary ion mass spectroscopy (SIMS).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.280-285
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• 2003

The influence of silicon surface damage on nickel-silicide (NiSi) has been characterized and H$_2$ anneal and TiN rapping has been applied to suppress the electrical, morphological deterioration phenomenon incurred by the surface damage. The substrate surface is intentionally damaged using Ar IBE (Ion beam etching) which can Precisely control the etch depth. The sheet resistance of NiSi increased about 18% by the surface damage, which is proven to be mainly due to the reduced silicide thickness. It is shown that simultaneous application of H: anneal and TiN capping layer is highly effective in suppressing the surface damage effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.611-614
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• 2007

The changes in the work $function({\Phi}_w)$ in the MgO protective layers after $plasma(Ar,\;H_2)$ treatment have been studied using ${\Upsilon}-focused$ ion beam $({\Upsilon}-FIB)$ system. The ${\Phi}_w$ was determined as follows: Ar-plasma $treatment({\Phi}_w=4.52eV)$, $H_2-plasma$ $treatment({\Phi}_w=5.65eV)$, and non-plasma $treatment({\Phi}_w=4.64eV)$. The results indicated that the H-plasma could not make any effective physical etching due to the small masses of hydrogen atoms and molecules while the hydration of H-plasma could grow some contaminating materials on the surface of MgO.

• Journal of the Korean Society of Mechanical Technology
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• v.13 no.4
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• pp.93-99
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• 2011

This paper presents a new type of optical silicon accelerometer using deep reactive ion etching (DRIE) and micro-stereolithography technology. Optical silicon accelerometer is based on a mass suspended by four vertical beams. A vertical shutter at the end of the mass can only moves along the sensing axis in the optical path between two single-mode optical fibers. The shutter modulates intensity of light from a laser diode reaching a photo detector. With the DRIE technique for (100) silicon, it is possible to etch a vertical shutter and beam. This ensures low sensitivity to accelerations that are not along the sensing axis. The microstructure for sensor packaging and optical fiber fixing was fabricated using micro stereolithography technology. Designed sensors are two types and each resonant frequency is about 15 kHz and 5 kHz.

• Journal of the Korean Magnetics Society
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• v.14 no.2
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• pp.59-64
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• 2004

We investigated the soft magnetic properties of nanocrystalline Fe-Al-O film as etching the oxide film with ion beam etching method. It is thought that the grain size of Fe-Al-O film increases as the thickness decreases. The coercivity and squareness increase with decreasing thickness. The surface curvature of Am images increases when the etching experiment proceeds. This phenomena could be due to the grain growth which occurs during sputtering. This grain growth could be assisted by the the plasma energy during sputtering. Therefore proper thickness should be searched to acquire the good soft magnetic properties for the nanocrystalline film material. Good soft magnetic properties of Fe-Al-O film was acquired at the thickness of more than 900 nm.

• The Korean Journal of Ceramics
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• v.7 no.1
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• pp.36-40
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• 2001

In order to fabricate uncooled IR sensors for pyroelectric applications, multilayered thin films of Pt/PbTiO$_3$/Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si and thermally isolating membrane structures of square-shaped/cantilevers-shaped microstructures were prepared. Cavity was also fabricated via direct silicon wafer bonding and etching technique. Metallic Pt layer was deposited by ion beam sputtering while PbTiO$_3$ thin films were prepared by sol-gel technique. Micromachining technology was used to fabricate microstructured-membrane detectors. In order to avoid a difficulty of etching active layers, silicon-nitride membrane structure was fabricated through the direct bonding and etching of the silicon wafer. Although multilayered thin film deposition and device fabrications were processed independently, these could b integrated to make IR micro-sensor devices.