Browse > Article
http://dx.doi.org/10.4313/JKEM.2003.16.4.280

The Dependency of Surface Damage to NiSi for CMOS Technology  

지희환 (충남대학교 전자공학과)
안순의 (충남대학교 전자공학과)
배미숙 (충남대학교 전자공학과)
이헌진 (충남대학교 전자공학과)
오순영 (충남대학교 전자공학과)
이희덕 (충남대학교 전자공학과)
왕진석 (충남대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.4, 2003 , pp. 280-285 More about this Journal
Abstract
The influence of silicon surface damage on nickel-silicide (NiSi) has been characterized and H$_2$ anneal and TiN rapping has been applied to suppress the electrical, morphological deterioration phenomenon incurred by the surface damage. The substrate surface is intentionally damaged using Ar IBE (Ion beam etching) which can Precisely control the etch depth. The sheet resistance of NiSi increased about 18% by the surface damage, which is proven to be mainly due to the reduced silicide thickness. It is shown that simultaneous application of H: anneal and TiN capping layer is highly effective in suppressing the surface damage effect.
Keywords
Ni-Silicide; Surface damage; TiN-Capping; CMOS technology;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Effect of a titanium cap in reducing interfacial oxides in the formation of nickel silicide /
[ W. L. Tan;K. L. Pey;S. Y. M. Chooi;J. H. Ye;T. Osipowicz ] / J. Appl. Phys.
2 Effect of interlayer on thermal stability of nickel silicide /
[ J. Maa;Y. Ono;D. J. Tweet;F. Zhang;S. T. Hsu ] / J. Vac. Sci. Technol. A
3 Comparison of TiSi2, CoSi2 and NiSi for thin-film silicon-on-insulator applications /
[ J. Chen;J. P. Colinge;D. Flandre;R. Gillon;J. P. Raskin;D. Vanhoenacker ] / J. Electrochem. Soc.
4 /
[ Dieter K. Schroder ] / Semiconductor Material and Device Characterization
5 Ti-capped NiSi 형성 및 열적 안정성에 관한 연구 /
[ 박수진;이근우;김주연;배규식 ] / 한국전기전자재료학회 2002년도 하계학술대회논문집
6 Effects of dry etching on the electrical properties of silicon /
[ J. M. Hedleson;M. W. Horn;S. J. Fonash ] / J. Vac. Sci. Tech. B
7 니켈 폴리사이드 게이트의 전기적 성질 /
[ 정연실;김시중;김주연;배규식 ] / 한국전기전자재료학회 99 추계학술대회논문집
8 Damage to Si substrates during SiO₂etching: A comparison of reactive etching and magnetron-enhanced reactive ion etching /
[ T. Gu;R. A. Ditizio;S. J. Fonash;O. Awadelkarim;J. Ruzyllo;R. W. Collins;H. J. Leary ] / J. Vac. Sci. Tech. B
9 Effects of hydrogen implantation on the structural and electrical properties of nickel silicide /
[ C. J. Choi;Y. W. Ok;S. S. Hullavarad;T. Y. Song;K. M. Lee;J. H. Lee;Y. J. Park ] / J. Electrochem. Soc.   DOI   ScienceOn
10 New salicidation technology with Ni(Pt) alloy for MOSFET /
[ P. S. Lee;K. L. Pey;D. Mangelinck;J. Ding;D. Z. Chi;L. Chan ] / IEEE, Electron Device Lett.   DOI   ScienceOn
11 Effects of <TEX>$SiO_2$</TEX> capping layer on the electrical properties and morphology of nickel silicides /
[ C. J. Choi;Y. W. Ok;T. Y. Seong;H. D. Lee ] / Jpn. J. Appl. Phys.
12 100nm 이하 CMOS 소자의 Source/Drain dopant 종류에 따른 Nickel silicide의 특성분석 /
[ 배미숙;김용구;지희환;이헌진;오순영;윤장근;박성형;왕진석;이희덕 ] / 한국전기전자재료학회 2002년 추계학술대회논문집
13 Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI /
[ T. Morimoto;T. Ohguro;H. S. Momose;T. Iinima;I. Kunishima;K. Suguro;I. Katakabe;H. Nakajima;M. Tsuchiaki;M. Ono;Y. Katsuiro;H. Iwai ] / IEEE Trans. Electron Devices   DOI   ScienceOn
14 Steady-state damage profiles due to reactive ion etching and ion-assisted etching /
[ R. J. Davis;P. Jha ] / J. Vac. Sci. Tech. B
15 Improved NiSi salicide process using presilicide N2+ implant for MOSFET /
[ P. S. Lee;K. L. Pey;D. Mangelinck;J. Ding;A. T. S. Wee;L. Chan ] / IEEE Electron Device Lett.   DOI   ScienceOn
16 Material aspects, electrical performance, and scalability of Ni silicide towards sub-0.13㎛ technologies /
[ A. Lauwers ] / J. Vac. Sci. Tech. B   DOI   ScienceOn