The Dependency of Surface Damage to NiSi for CMOS Technology |
지희환
(충남대학교 전자공학과)
안순의 (충남대학교 전자공학과) 배미숙 (충남대학교 전자공학과) 이헌진 (충남대학교 전자공학과) 오순영 (충남대학교 전자공학과) 이희덕 (충남대학교 전자공학과) 왕진석 (충남대학교 전자공학과) |
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Effect of a titanium cap in reducing interfacial oxides in the formation of nickel silicide
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Effect of interlayer on thermal stability of nickel silicide
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Comparison of TiSi2, CoSi2 and NiSi for thin-film silicon-on-insulator applications
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Ti-capped NiSi 형성 및 열적 안정성에 관한 연구
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Effects of dry etching on the electrical properties of silicon
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니켈 폴리사이드 게이트의 전기적 성질
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Damage to Si substrates during SiO₂etching: A comparison of reactive etching and magnetron-enhanced reactive ion etching
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Effects of hydrogen implantation on the structural and electrical properties of nickel silicide
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DOI ScienceOn |
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New salicidation technology with Ni(Pt) alloy for MOSFET
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DOI ScienceOn |
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Effects of <TEX>$SiO_2$</TEX> capping layer on the electrical properties and morphology of nickel silicides
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100nm 이하 CMOS 소자의 Source/Drain dopant 종류에 따른 Nickel silicide의 특성분석
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13 |
Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI
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DOI ScienceOn |
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Steady-state damage profiles due to reactive ion etching and ion-assisted etching
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Improved NiSi salicide process using presilicide N2+ implant for MOSFET
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DOI ScienceOn |
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Material aspects, electrical performance, and scalability of Ni silicide towards sub-0.13㎛ technologies
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DOI ScienceOn |