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http://dx.doi.org/10.4313/JKEM.2007.20.7.611

Measurement of Changes in Work Function on MgO Protective Layer after H2-plasma Treatment  

Jeong, Jae-Cheon (오리온 PDP)
Rhee, Seuk-Joo (한국외국어대학교 전자물리학과)
Cho, Jae-Won (광운대학교 전자물리학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.20, no.7, 2007 , pp. 611-614 More about this Journal
Abstract
The changes in the work $function({\Phi}_w)$ in the MgO protective layers after $plasma(Ar,\;H_2)$ treatment have been studied using ${\Upsilon}-focused$ ion beam $({\Upsilon}-FIB)$ system. The ${\Phi}_w$ was determined as follows: Ar-plasma $treatment({\Phi}_w=4.52eV)$, $H_2-plasma$ $treatment({\Phi}_w=5.65eV)$, and non-plasma $treatment({\Phi}_w=4.64eV)$. The results indicated that the H-plasma could not make any effective physical etching due to the small masses of hydrogen atoms and molecules while the hydration of H-plasma could grow some contaminating materials on the surface of MgO.
Keywords
MgO; Plasma; Work $function({\Phi}_w)$; Secondary electron omission $coefficient({\Upsilon})$;
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