• 제목/요약/키워드: inversion layer

검색결과 280건 처리시간 0.028초

울산지역 역전층 발생에 따른 대기오염 특성분석 (Characteristics of Air Pollution Related to Occurrence of Inversion Layer in Ulsan Area)

  • 임윤규;김유근;조윤미
    • 한국대기환경학회:학술대회논문집
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    • 한국대기환경학회 2003년도 추계학술대회 논문집
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    • pp.115-116
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    • 2003
  • 역전층 현상은 주로 맑은 날 야간 복사냉각에 의해 종종 나타나는 현상으로 사계절 모두 빈번히 존재한다. 하지만 역전층의 발달 정도와 강도 등은 그 날의 일기상태에 의해 크게 좌우되며, 또한 그 지역의 기후 및 지리적인 환경도 중요한 역할을 한다. 본 연구 대상지역인 울산지역은 산업화에 따른 고도성장을 이룬 도시 중 하나로 우리나라 최대공업도시로 잘 알려져 있다. 이와 같은 도시의 야간 역전층 생성 및 발달과정에 있어서 토시 내 인공열의 효과 역시 중요한 요인으로 작용 할 수 있다. (중략)

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REOXIDATION법을 이용한 Si WAFER의 HOLE TRAP의 제거 (Elimination of Hole Traps on Si Wafer using Reoxidation method)

  • 홍순관;주병권;김철주
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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    • pp.433-435
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    • 1987
  • Thermal reoxidation was carried out to eliminate hole traps at the surface of Si wafer. As the result, the good surface state of wafer was obtained and hole traps were eliminate at the inversion layer. For the evaluation of reoxidation effects. MOS diode was fabricated and its C-Y curve was plotted.

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Three-dimensional Numerical Prediction on the Evolution of Nocturnal Thermal High (Tropical Night) in a Basin

  • Choi, Hyo;Kim, Jeong-Woo
    • International Union of Geodesy and Geophysics Korean Journal of Geophysical Research
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    • 제25권1호
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    • pp.57-81
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    • 1997
  • Numerical prediction of nocturnal thermal high in summer of the 1995 near Taegu city located in a basin has been carried out by a non-hydrostatic numerical model over complex terrain through one-way double nesting technique in the Z following coordinate system. Under the prevailing westerly winds, vertical turbulent fluxes of momentum and heat over mountains for daytime hours are quite strong with a large magnitude of more than $120W/\textrm{m}^2$, but a small one of $5W/\textrm{m}^2$ at the surface of the basin. Convective boundary layer (CBL) is developed with a thickness of about 600m over the ground in the lee side of Mt. Hyungje, and extends to the edge of inland at the interface of land sea in the east. Sensible heat flux near the surface of the top of the mountain is $50W/\textrm{m}^2$, but its flux in the basin is almost zero. Convergence of sensible heat flux occurs from the ground surface toward the atmosphere in the lower layer, causing the layer over the mountain to be warmed up, but no convergance of the flux over the basin results from the significant mixing of air within the CBL. As horizontal transport of sensible heat flux from the top of the mountain toward over the basin results in the continuous accumulation of heat with time, enhancing air temperature at the surface of the basin, especially Taegu city to be higher than $39.3^{\circ}C$. Since latent heat fluxes are $270W/\textrm{m}^2$ near the top of the mountain and $300W/\textrm{m}^2$ along the slope of the mountain and the basin, evaporation of water vapor from the surface of the basin is much higher than one from the mountain and then, horizontal transport of latent heat flux is from the basin toward the mountain, showing relative humidity of 65 to 75% over the mountain to be much greater than 50% to 55% in the basin. At night, sensible heat fluxes have negative values of $-120W/\textrm{m}^2$ along the slope near the top of the mountain and $-50W/\textrm{m}^2$ at the surface of the basin, which indicate gain of heat from the lower atmosphere. Nighttime radiative cooling produces a shallow nocturnal surface inversion layer with a thickness of about 100m, which is much lower than common surface inversion layer, and lifts extremely heated air masses for daytime hours, namely, a warm pool of $34^{\circ}C$ to be isolated over the ground surface in the basin. As heat transfer from the warm pool in the lower atmosphere toward the ground of the basin occurs, the air near the surface of the basin does not much cool down, resulting in the persistence of high temperature at night, called nocturnal thermal high or tropical night. High relative humidity of 75% is found at the surface of the basin under the moderate wind, while slightly low relative humidity of 60% is along the eastern slope of the high mountain, due to adiabatic heating by the srong downslope wind. Air temperature near the surface of the basin with high moisture in the evening does not get lower than that during the day and the high temperature produces nocturnal warming situation.

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인공송신원 가청주파수 자기지전류 탐사를 이용한 제주 동남부의 전기비저항 구조 및 지하수 분포 조사 (Geoelectrical Structure and Groundwater Distribution in the South-eastern Region of Jeju Island Revealed by Controlled Source Audio-frequency Magneto Telluric (CSAMT) survey)

  • 양준모;권병두;이희순;송성호;박계순;이규상
    • 자원환경지질
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    • 제40권1호
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    • pp.67-85
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    • 2007
  • 제주도 동남부의 전기비저항 구조 및 지하수 분포 형태를 조사하기 위해 제주도 중산간에서 남동방향으로 해안 지역을 횡단하는 두 측선에 대해 인공송신원 자기지전류탐사를 수행하였다. 측점들이 위치한 지질학적 상황을 고려하여 세 종류의 일차원 역산 기법을 도입하였고, 해석의 신뢰성 향상을 위해 각 역산 결과를 비교, 분석하였다. 이 과정으로부터 도출된 제주 동남부의 개략적인 전기비저항 구조는 고비저항-저비저항-보다 저비저항을 갖는 3층 구조였다. 역산 결과와 측점 부근의 심부 시추 자료의 비교를 통해 제주도 동남부의 각 층별 암상이 개략적으로 추정되었다: 지질학적 층서의 관점에서 제 1층과 2층은 두께 100-250m의 현무암층에, 제 3층은 서귀포층 및 U층에 대응하는데, 서귀포층의 두께는 조사심도가 충분히 깊지 않고 서귀포층과 U층의 전기비저항 차이가 작기 때문에 추정할 수 없었다. 그러나 주대수층과 밀접하게 관련 있는 서귀포층은 제주도 동남부 지역의 경우 중산간 지역부터 해안 지역까지 뚜렷한 공간적 연속성을 보여주었다.

Characterizations of Interface-state Density between Top Silicon and Buried Oxide on Nano-SOI Substrate by using Pseudo-MOSFETs

  • Cho, Won-Ju
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제5권2호
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    • pp.83-88
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    • 2005
  • The interface-states between the top silicon layer and buried oxide layer of nano-SOI substrate were developed. Also, the effects of thermal treatment processes on the interface-state distributions were investigated for the first time by using pseudo-MOSFETs. We found that the interface-state distributions were strongly influenced by the thermal treatment processes. The interface-states were generated by the rapid thermal annealing (RTA) process. Increasing the RTA temperature over $800^{\circ}C$, the interface-state density considerably increased. Especially, a peak of interface-states distribution that contributes a hump phenomenon of subthreshold curve in the inversion mode operation of pseudo-MOSFETs was observed at the conduction band side of the energy gap, hut it was not observed in the accumulation mode operation. On the other hand, the increased interface-state density by the RTA process was effectively reduced by the relatively low temperature annealing process in a conventional thermal annealing (CTA) process.

Development of sulfonated polysulfone composite membranes for ammonium rejection

  • Bastos, Edna T.R.;Barbosa, Celina C.R.;Silva, Jaciara C.;Queiroz, Vanessa B.C.;Vaitsman, Delmo S.
    • Membrane and Water Treatment
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    • 제4권2호
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    • pp.83-93
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    • 2013
  • In the present investigation, were synthesized composite membranes prepared by simultaneous casting of two polymer solutions using the technique of phase inversion by immersion / precipitation. The support layer was prepared using polyethersulfone and polysulfone as base polymer and for the top layer was used sulfonated polysulfone (SPSU) with 50% sulfonation degree. The morphology of the resulting membranes were characterized by scanning electron microscopy (SEM). The final results showed that it is possible to prepare composite membranes by simultaneous casting of two polymer solutions with adherence between the two layers. Regarding the permeation tests, the developed membranes presented values of hydraulic permeability within the range of commercial nanofiltration (NF) membranes. Values rejection of 80% ammonium ions can be increased by using a SPSU with a greater degree of sulfonation.

계면공학에 기초한 우르차이트 결정의 극성 조절 (Polarity Control of Wurtzite Crystal by Interface Engineering)

  • 홍순구;쓰즈키 타쿠마;미네기쉬 쯔토무;조명환;야오 타카푸미
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.95-96
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    • 2005
  • The general method and mechanism for the polarity control of heteroepitaxial wurtzite films, such as ZnO and GaN, by interface engineering via plasma-assisted molecular beam epitaxy are addressed. We proposed the principle and method controlling the crystal polarity of ZnO on GaN and GaN on ZnO. The crystal polarity of the lower film was maintained by forming a heterointerfce without any interface layer between the upper and the lower layers. However the crystal polarity could be changed by forming the heterointerface with the interface layer having an inversion center. The principle and method suggested here give us a promising tool to fabricate polarity inverted heterostructures, which applicable to invent novel heterostructures and devices.

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초음파현미경에서 V(z) 곡선을 이용한 세라믹/금속 접합계면의 비파괴평가 (Nondestructive Evaluation of Ceramic/Metal Interface Using the V(z) Curve of Scanning Acoustic Microscope)

  • 박익근;이철구;조동수;김용권
    • Journal of Welding and Joining
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    • 제23권2호
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    • pp.59-65
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    • 2005
  • A leaky surface acoustic wave (LSAW) velocity was measured using a scanning acoustic microscope on the ceramic/metal interface in order to investigate material properties. The inverse Fourier transform (IFFT) of the V(z) curve contains the reflectance function of a liquid-specimen interface. So, the longitudinal, transverse, and Rayleigh wave velocities for each layer are obtained by the inversion of the V(z) curve at the same time. This paper contains mainly the experimental procedure for measurements of the LSAW velocity, and the results obtained for the velocity variation of individual layer after the thermal shock. It is shown that this method is useful in measuring the material properties under external stress.

두꺼운 이중층 Co/Ti 막의 실리사이드화에 관한 연구 (A Study on the Silicidation of Thick Co/Ti Bilayer)

  • 이병욱;권영재;이종무;김영욱
    • 한국세라믹학회지
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    • 제33권9호
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    • pp.1012-1018
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    • 1996
  • To investigate the final structures and reactions of silicides a somewhat thick Ti monolayer Co monolayer and Co/Ti bilayer films were deposited on single Si(100) wafer by electron beam evaporation followed by heat treatment using RTA system in N2 ambient. TiO2 film formed between Ti and TiSi2 layers due to oxgen or moisture in the Ti monolayer sample. The final layer structure obtained after the silicidation heat-treatment of the Co/Ti bilayer sample turned out to be TiSi2/CoSi2/Ti-Co-Si alloy/CoSi2/Si sbustrate. This implies that imperfect layer inversion occurred due to the formation of Ti-Co-Si intermediate phase.

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NMOSFET의 반전층 양자 효과에 관한 연구 (Analysis of Invesion Layer Quantization Effects in NMOSFETs)

  • 박지선;신형순
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제51권9호
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    • pp.397-407
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    • 2002
  • A new simulator which predicts the quantum effect in NMOSFET structure is developed. Using the self-consistent method by numerical method, this simulator accurately predicts the carrier distribution due to improved calculation precision of potential in the inversion layer. However, previous simulator uses analytical potential distribution or analytic function based fitting parameter Using the developed simulator, threshold voltage increment and gate capacitance reduction due to the quantum effect are analyzed in NMOS. Especially, as oxide thickness and channel doping dependence of quantum effect is analyzed, and the property analysis for the next generation device is carried out.