• Proceedings of the Korea Air Pollution Research Association Conference
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• 2003.11a
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• pp.115-116
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• 2003

역전층 현상은 주로 맑은 날 야간 복사냉각에 의해 종종 나타나는 현상으로 사계절 모두 빈번히 존재한다. 하지만 역전층의 발달 정도와 강도 등은 그 날의 일기상태에 의해 크게 좌우되며, 또한 그 지역의 기후 및 지리적인 환경도 중요한 역할을 한다. 본 연구 대상지역인 울산지역은 산업화에 따른 고도성장을 이룬 도시 중 하나로 우리나라 최대공업도시로 잘 알려져 있다. 이와 같은 도시의 야간 역전층 생성 및 발달과정에 있어서 토시 내 인공열의 효과 역시 중요한 요인으로 작용 할 수 있다. (중략)

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.433-435
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• 1987

Thermal reoxidation was carried out to eliminate hole traps at the surface of Si wafer. As the result, the good surface state of wafer was obtained and hole traps were eliminate at the inversion layer. For the evaluation of reoxidation effects. MOS diode was fabricated and its C-Y curve was plotted.

• International Union of Geodesy and Geophysics Korean Journal of Geophysical Research
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• v.25 no.1
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• pp.57-81
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• 1997

Numerical prediction of nocturnal thermal high in summer of the 1995 near Taegu city located in a basin has been carried out by a non-hydrostatic numerical model over complex terrain through one-way double nesting technique in the Z following coordinate system. Under the prevailing westerly winds, vertical turbulent fluxes of momentum and heat over mountains for daytime hours are quite strong with a large magnitude of more than $120W/\textrm{m}^2$, but a small one of $5W/\textrm{m}^2$ at the surface of the basin. Convective boundary layer (CBL) is developed with a thickness of about 600m over the ground in the lee side of Mt. Hyungje, and extends to the edge of inland at the interface of land sea in the east. Sensible heat flux near the surface of the top of the mountain is $50W/\textrm{m}^2$, but its flux in the basin is almost zero. Convergence of sensible heat flux occurs from the ground surface toward the atmosphere in the lower layer, causing the layer over the mountain to be warmed up, but no convergance of the flux over the basin results from the significant mixing of air within the CBL. As horizontal transport of sensible heat flux from the top of the mountain toward over the basin results in the continuous accumulation of heat with time, enhancing air temperature at the surface of the basin, especially Taegu city to be higher than $39.3^{\circ}C$. Since latent heat fluxes are $270W/\textrm{m}^2$ near the top of the mountain and $300W/\textrm{m}^2$ along the slope of the mountain and the basin, evaporation of water vapor from the surface of the basin is much higher than one from the mountain and then, horizontal transport of latent heat flux is from the basin toward the mountain, showing relative humidity of 65 to 75% over the mountain to be much greater than 50% to 55% in the basin. At night, sensible heat fluxes have negative values of $-120W/\textrm{m}^2$ along the slope near the top of the mountain and $-50W/\textrm{m}^2$ at the surface of the basin, which indicate gain of heat from the lower atmosphere. Nighttime radiative cooling produces a shallow nocturnal surface inversion layer with a thickness of about 100m, which is much lower than common surface inversion layer, and lifts extremely heated air masses for daytime hours, namely, a warm pool of $34^{\circ}C$ to be isolated over the ground surface in the basin. As heat transfer from the warm pool in the lower atmosphere toward the ground of the basin occurs, the air near the surface of the basin does not much cool down, resulting in the persistence of high temperature at night, called nocturnal thermal high or tropical night. High relative humidity of 75% is found at the surface of the basin under the moderate wind, while slightly low relative humidity of 60% is along the eastern slope of the high mountain, due to adiabatic heating by the srong downslope wind. Air temperature near the surface of the basin with high moisture in the evening does not get lower than that during the day and the high temperature produces nocturnal warming situation.

• Economic and Environmental Geology
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• v.40 no.1 s.182
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• pp.67-85
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• 2007

We have performed the CSAMT survey to examine the geoelectrical structure and groundwater distribution for two survey lines across the south-eastern region of Jeju Island. Three kinds of 1-D inversion techniques were employed taking account of the geological situation around the observation sites, and their inversion results were concurrently compared and analyzed to improve the reliability of interpretation. The resultant inverted resistivity structures reveals the three-layered structure, which is composed of the layers with a high-low-lower resistivity from the surface downward. Through the comparison of the inverted resistivity model and core log of deep borehole nearby observation sites, the lithology of each inverted layer was inferred. The first layer and second layer corresponded to the basaltic layer with a thickness of $100{\sim}250m$, and the third layer to the Seoguipo Formation and the U Formation; the thickness of the Seoguipo Formation could not be estimated due to the limitation of investigation depth and little resistivity difference between both Formations. Nevertheless, the Seoguipo Formation, which is strongly associated with the groundwater system in the south-eastern region of Jeju Island, showed the conspicuous spatial continuity from the middle mountain area to coastal area.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.83-88
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• 2005

The interface-states between the top silicon layer and buried oxide layer of nano-SOI substrate were developed. Also, the effects of thermal treatment processes on the interface-state distributions were investigated for the first time by using pseudo-MOSFETs. We found that the interface-state distributions were strongly influenced by the thermal treatment processes. The interface-states were generated by the rapid thermal annealing (RTA) process. Increasing the RTA temperature over $800^{\circ}C$, the interface-state density considerably increased. Especially, a peak of interface-states distribution that contributes a hump phenomenon of subthreshold curve in the inversion mode operation of pseudo-MOSFETs was observed at the conduction band side of the energy gap, hut it was not observed in the accumulation mode operation. On the other hand, the increased interface-state density by the RTA process was effectively reduced by the relatively low temperature annealing process in a conventional thermal annealing (CTA) process.

• Membrane and Water Treatment
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• v.4 no.2
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• pp.83-93
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• 2013

In the present investigation, were synthesized composite membranes prepared by simultaneous casting of two polymer solutions using the technique of phase inversion by immersion / precipitation. The support layer was prepared using polyethersulfone and polysulfone as base polymer and for the top layer was used sulfonated polysulfone (SPSU) with 50% sulfonation degree. The morphology of the resulting membranes were characterized by scanning electron microscopy (SEM). The final results showed that it is possible to prepare composite membranes by simultaneous casting of two polymer solutions with adherence between the two layers. Regarding the permeation tests, the developed membranes presented values of hydraulic permeability within the range of commercial nanofiltration (NF) membranes. Values rejection of 80% ammonium ions can be increased by using a SPSU with a greater degree of sulfonation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.95-96
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• 2005

The general method and mechanism for the polarity control of heteroepitaxial wurtzite films, such as ZnO and GaN, by interface engineering via plasma-assisted molecular beam epitaxy are addressed. We proposed the principle and method controlling the crystal polarity of ZnO on GaN and GaN on ZnO. The crystal polarity of the lower film was maintained by forming a heterointerfce without any interface layer between the upper and the lower layers. However the crystal polarity could be changed by forming the heterointerface with the interface layer having an inversion center. The principle and method suggested here give us a promising tool to fabricate polarity inverted heterostructures, which applicable to invent novel heterostructures and devices.

• Journal of Welding and Joining
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• v.23 no.2
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• pp.59-65
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• 2005

A leaky surface acoustic wave (LSAW) velocity was measured using a scanning acoustic microscope on the ceramic/metal interface in order to investigate material properties. The inverse Fourier transform (IFFT) of the V(z) curve contains the reflectance function of a liquid-specimen interface. So, the longitudinal, transverse, and Rayleigh wave velocities for each layer are obtained by the inversion of the V(z) curve at the same time. This paper contains mainly the experimental procedure for measurements of the LSAW velocity, and the results obtained for the velocity variation of individual layer after the thermal shock. It is shown that this method is useful in measuring the material properties under external stress.

• Journal of the Korean Ceramic Society
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• v.33 no.9
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• pp.1012-1018
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• 1996

To investigate the final structures and reactions of silicides a somewhat thick Ti monolayer Co monolayer and Co/Ti bilayer films were deposited on single Si(100) wafer by electron beam evaporation followed by heat treatment using RTA system in N2 ambient. TiO2 film formed between Ti and TiSi2 layers due to oxgen or moisture in the Ti monolayer sample. The final layer structure obtained after the silicidation heat-treatment of the Co/Ti bilayer sample turned out to be TiSi2/CoSi2/Ti-Co-Si alloy/CoSi2/Si sbustrate. This implies that imperfect layer inversion occurred due to the formation of Ti-Co-Si intermediate phase.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.397-407
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• 2002

A new simulator which predicts the quantum effect in NMOSFET structure is developed. Using the self-consistent method by numerical method, this simulator accurately predicts the carrier distribution due to improved calculation precision of potential in the inversion layer. However, previous simulator uses analytical potential distribution or analytic function based fitting parameter Using the developed simulator, threshold voltage increment and gate capacitance reduction due to the quantum effect are analyzed in NMOS. Especially, as oxide thickness and channel doping dependence of quantum effect is analyzed, and the property analysis for the next generation device is carried out.