• Proceedings of the KSME Conference
• /
• 2008.11a
• /
• pp.1295-1300
• /
• 2008

During the manufacturing and the service life of Au-Al wire bonded electronic packages, the ball bonds experience elevated temperatures and hence accelerated thermal diffusion reactions that promote the transformation of the Au-Al phases and the IMC growth. In this paper, the IC under high temperature storage (HTS) tests at $175^{\circ}C,\;200^{\circ}C$, and $250^{\circ}C$ are meticulously investigated. Thermal exposure resulted in the IMC growth, Kirkendall void and the crack of the Au-Al phases. The crack propagation occurs resulting in the failure of the Au-Al ball bonds. As the IC was exposed at the high temperature, decreased in the lifetime.

• Journal of the Microelectronics and Packaging Society
• /
• v.31 no.1
• /
• pp.35-42
• /
• 2024

Recently, with the miniaturization and high integration of semiconductor chips, the bump bridge phenomenon caused by fine pitches is drawing attention as a problem. Accordingly, Cu pillar bump, which can minimize the bump bridge phenomenon, is widely applied in the semiconductor package industry for fine pitch applications. When exposed to a high-temperature environment, the thickness of the intermetallic compound (IMC) formed at the joint interface increases, and at the same time, Kirkendall void is formed and grown inside some IMC/Cu and IMC interfaces. Therefore, it is important to control the excessive growth of IMC and the formation and growth of Kirkendall voids because they weaken the mechanical reliability of the joints. Therefore, in this study, isothermal aging evaluation of Cu pillar bump joints with a CS (Cu+ Sn-1.8Ag Solder) structure was performed and the corresponding results was reported.

• Journal of the Microelectronics and Packaging Society
• /
• v.29 no.2
• /
• pp.81-89
• /
• 2022

The in-situ electromigration(EM) and annealing test were performed at 110, 130, and 150℃ with a current density of 1.3×10⁵ A/cm² conditions to investigate the effect of non-conductive film (NCF) on growth kinetics of intermetallic compound (IMC) in Cu/Ni/Sn-2.5Ag microbump. As a result, the activation energy of the Ni₃Sn₄ IMC growth in the annealing and EM conditions according to the NCF application was about 0.52 eV, and there was no significant difference. This is because the growth rate of Ni-Sn IMC is much slower than that of Cu-Sn IMC, and the growth behavior of Ni-Sn IMC increases linearly with the square root of time, so it has the same reaction mechanism dominated by diffusion. In addition, there is no difference in the activation energy of the Ni₃Sn₄ IMC growth because the EM resistance effect of the back stress according to the NCF application is not large.

• Journal of Welding and Joining
• /
• v.25 no.3
• /
• pp.51-56
• /
• 2007

A $CO_2$ laser overlay was conducted by using a Fe-based powder on the AC2B aluminum substrate. Cracks and intermetallic compounds (IMC) were observed inconsistently along the interface between the overlay and post-molten layer. A scanning electron microscopy (SEM) with energy dispersive spectroscopy (EDS) detected some Fe-rich IMC ($Fe_3Al$, FeAl) as well as the brittle Al-rich IMC ($Fe_2Al_5,\;FeAl_3$). Micro vickers hardness proved the formation of Al-rich IMC ($FeAl_3$) along the interface by showing HV0.1 $800{\sim}900$. Furthermore, nano indentation was successfully applied to investigate the behavior of IMC more precisely than the micro vickers hardness.

• Journal of the Microelectronics and Packaging Society
• /
• v.17 no.1
• /
• pp.81-88
• /
• 2010

Thermal annealing and electromigration test were performed at $150^{\circ}C$ and $4{\times}10^3\;A/cm^2$ conditions in order to investigate the effect of PCB surface finishs on the growth kinetics of intermetallic compound (IMC) in Sn-3.0Ag-0.5Cu solder bump. The surface finishes of the electrodes of printed circuit board (PCB) were organic solderability preservation (OSP), immersion Sn, and electroless Ni/immersion gold (ENIG). During thermal annealing, the OSP and immersion Sn show similar IMC growth velocity, while ENIG surface finish had much slower IMC growth velocity. Applying electric current accelerated IMC growth velocity and showed polarity effect due to directional electron flow.

• Transactions on Electrical and Electronic Materials
• /
• v.16 no.3
• /
• pp.112-116
• /
• 2015

This work studied the thickness and contact angle of solder joints between SAC 305 lead-free solder alloy and a Copper (Cu) substrate. Intermetallic compound (IMC) thickness and contact angle of 3Sn-Ag-0.5Cu (SAC 305) leadfree solder were measured using varying aging times, at a fixed temperature at 30℃. The thickness of IMC and contact angle depend on the aging time. IMC thickness increases as the aging increases. The contact angle gradually decreased from 39.49° to 27.59° as aging time increased from zero to 24 hours for big solder sample. Meanwhile, for small solder sample, the contact angle increased from 32.00° to 40.53° from zero to 24 hours. The IMC thickness sharply increased from 0.007 mm to 0.011 mm from zero to 24 hours aging time for big solder. In spite of that, for small solder the IMC thickness gradually increased from 0.009 mm to 0.017 mm. XRD analysis was used to confirm the intermetallic formation inside the sample. Cu₆Sn₅, Cu₃Sn, Ni₃Sn and Ni₃Sn₂ IMC layers were formed between the solder and the copper substrate. As the aging time increased, the strength of the solder joint mproved due to reduced contact angle.

• Journal of the Microelectronics and Packaging Society
• /
• v.29 no.2
• /
• pp.73-79
• /
• 2022

In this study, a reaction study between Ga, which has recently been spotlighted as a low-temperature bonding material, and Cu, a representative electrode material, was conducted to investigate information necessary for low-temperature soldering applications. Interfacial reaction and intermetallic compound (IMC) growth were observed and analyzed by reacting Ga and Cu/Au substrates in the temperature range of 80-200℃. The main IMC growing at the reaction interface was CuGa₂ phase, and AuGa₂ IMC with small particle sizes was formed on the upper part and Cu₉Ga₄ IMC with a thin band shape on the lower part of the CuGa₂ layer. CuGa₂ particles showed a scallop shape, and the particle size increased without significant shape change as the reaction time increased, similar to the case of Cu₆Sn₅ growth. As a result of analyzing the CuGa₂ growth mechanism, the time exponent was calculated to be ~3.0 in the temperature range of 120-200℃, and the activation energy was measured to be 17.7 kJ/mol.

• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.3
• /
• pp.64-72
• /
• 2023

In this study, after transferring graphene on a Cu substrate and printing a Sn-3.0Ag-0.5Cu Pb-free solder paste on the Cu substrate, effects of the transferred graphene on formations and growths of intermetallic compound (IMC) at the interface between the Cu substrate and the solder were reported during processes of reflow soldering and isothermal aging for 1000 h with various temperatures (125, 150, and 175 ℃). Thicknesses of Cu₆Sn₅ and Cu₃Sn IMCs at the interfaces with graphene were decreased during the reflow soldering and isothermal aging processes compared to those without graphene. The transferred graphene layers also showed that the growth rate constant and square of growth rate constant which related to the growth mechanisms of Cu₆Sn₅ and Cu₃Sn IMCs with t he t emperature a nd t ime of t he i sothermal aging c ould dramatically decreased.

• Journal of the Microelectronics and Packaging Society
• /
• v.17 no.1
• /
• pp.25-31
• /
• 2010

In this study, we investigated the morphology and thermal stability of interfacial phases in joint between lead free solder(Sn-3.0Ag-0.5Cu) and electroless Ni-W-P under bump metallizations(UBM) with different tungsten contents as a function of thermal aging. Content of phosphorus of each deposits was fixed at 8 wt.%, and content of tungsten was variated each 0, 3, 6 and 9 wt.%. Specimens were prepared by reflowing at $255^{\circ}C$, aging range was $200^{\circ}C$ and up to 2 weeks. After reflow process, in the electroless Ni(W)-P/solder joint, the interfacial intermetallic compound(IMC) was showed both $(Cu,Ni)_6Sn_5$ and $(Ni,Cu)_3Sn_4$. UBM and generated IMC at the interface of lead free solder was proportionally increased with aging time. The thickness of IMC was increased because the generation rate of $Ni(W)_3P$ decreased with increasing contents of W.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2003.11a
• /
• pp.133-137
• /
• 2003

The effect of Bi additions to the eutectic Sn-3.5Ag solder alloy on the growth kinetics of the intermetallic compound (IMC) layers during solid-state aging of Sn-Ag-Bi/Cu solder joints has been Investigated. The Bi additions enhanced the growth rate of the total IMC layer comprising of $Cu_6Sn_5$ and $Cu_3Sn$ sublayers. This enhanced IMC growth rate was primarily due to the rapid increase In the growth rate of $Cu_6Sn_5$ sublayer. The growth rate of $Cu_3Sn$ sublayers was little influenced and appeared to be retarded by the Bi additions. The observed growth behavior of $Cu_6Sn_5$ and $Cu_3Sn$ sublayers could be understood if the interfacial reaction barrier at the $Cu_6Sn_5/solder$ interface were reduced by the segregation of Bi at the interface.