• Structural Engineering and Mechanics
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• 제50권4호
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• pp.441-457
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• 2014

This paper presents a finite element based numerical model to solve two dimensional bi-material problems. A bi-material beam consisting of two phase materials ceramic and metal is modelled by finite element method. The beam is subjected simultaneously to mechanical and thermal loadings. The main objective of this study is the analysis of crack deviation located in the brittle material near the interface. The effect of temperature gradient, the residual stresses and applied loads on crack initiation, propagation and deviation are examined and highlighted.

• Proceedings of the Korean Geotechical Society Conference
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• 한국지반공학회 2010년도 춘계 학술발표회
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• pp.856-861
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• 2010

In recent days, the safety of the levee has been an issue because the levee has become bigger according to the Four-river Restoration Project and so on. The greater part of the levee damage has occurred in the interface between soils and the structures. Specially, the drainage construction crosses the levee keeps its settlement down in order to secure a grade of drainage. However, when the settlement isn't generated by using foundation such as pile, the levee is more likely to have leakage at the interface because the construction doesn't behave with soils. In our study, therefor, testing of the behavior of the levee having the drainage construction was carried out to clarify the effects of the foundation type of drainage construction.

• Transactions of the Korean Society of Mechanical Engineers A
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• 제23권11호
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• pp.2078-2086
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• 1999

Fracture behaviors of an interface crack in a ductile layer sandwiched by rigid substrates are analyzed by finite element method. Several fracture mechanisms and the corresponding criteria are examined. And the crack growth behavior and fracture toughness are predicted. As the results, various crack growth procedures such as the crack jump to the other interface on the opposite side, the creation of a new crack far from the initial crack front, and the asymmetric relation of fracture toughness vs. mode mixity ($J_c$-$\Phi$) can be successfully explained.

• Journal of the Society of Naval Architects of Korea
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• 제40권6호
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• pp.30-36
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• 2003

To improve survivability of damaged ship, assessment of stability and structural safety, and behavior analysis in wave is required. Prediction of sinking time, damage stability and structural strength considering progressive flooding and dynamic force in wave is very important. To do it, a geometric model which can be express damaged ship is prepared. This paper described the geometric modeler for survivability assessment of damaged ship. The modeler is developed based on 3-D geometric modeling kernel, ACIS. The hull form and compartment definition is available fundamentally. And requirement for modeler contains data generation and interface for hydrostatic calculation, behavior analysis, and longitudinal strength analysis and so on. To easy access modeling system by conventional user such as crew, user interface is developing.

• Journal of Adhesion and Interface
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• 제19권2호
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• pp.84-94
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• 2018

Electrically debonding adhesives[EDA], one of the controlled delamination materials[CDM] is reviewed. CDM can be defined as the ability to separate adhesive bonded assemblies without causing damage to the substrates. Its application includes electronics, medical surgery, dentistry, building and general manufacturing where the opportunity to separate assemblies is important. There are several important mechanisms of EDAs; faradaic reaction, phase separation and anode detachment, cathodic debonding, gas emission mechanism, and mechanical stresses. These mechanisms are reviewed with various research results. Since the mechanism behind the electrochemical debonding of adhesives is not well understood, this review aims to help the research scientists in the industries. Finally, new applications of EDA are introduced as new business opportunity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제13권5호
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• pp.365-370
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• 2000

Schottky contacts on n-In$\_$0.53//Ga$\_$0.47//As have been made by metal deposition on substrates cooled to a temperature of 77K. The current-voltage and capacitance-voltage characteristics showed that the Schottky diodes formed at low temperature had a much improved barrier height compared to those formed at room temperature. The Schottky barrier height ø$\_$B/ was found to be increased from 0.2eV to 0.6eV with Ag metal. The saturation current density of the low temperature diode was about 4 orders smaller than for the room temperature diode. A current transport mechanism dominated by thermionic emission over the barrier for the low temperature diode was found from current-voltage-temperature measurement. Deep level transient spectroscopy studies exhibited a bulk electron trap at E$\_$c/-0.23eV. The low temperature process appears to reduce metal induced surface damage and may form an MIS (metal-insulator-semiconductor)-like structure at the interface.

• Proceedings of the KIEE Conference
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.594-597
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• 1993

With the increase of electric power demand in the downtown area. many problems, such as the difficulty in security of substation site and interference of the electromagnetic wave or damage to person due to outdoor type substation facilities has been occured. Therefore, the compaction of substation facilities is required and the gas insulated switchgear(GIS) has been adopted accordingly. However, much care should be taken of the interface problem between cable and GIS. This paper describes the failure analysis and a countmeasure for prevent ion from failure in the interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제13권5호
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• pp.376-382
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• 2000

We successfully fabricated OLED(Organic Light Emitting Diodes) with Al cathodes electrode deposited by the DC magnetron sputtering. The effects of a controlled Al cathode layer of an Indium Tin Oxide (ITO)/blended single polymer layer (PVK Bu:PBD:dye)/Al light emitting diodes are described. The PVK (Poly(N-vinylcarbazole)) and Bu-PBD (2-(4-biphenyl-phenyl)-1,3,4-oxadiazole) are used hole transport polymer and electron transport molecule respectively. We found that both current injection and electroluminescence output are significantly different with a variable DC sputtering power. The difference is believed to be due to the influence near the blended polymer layer/cathode interface that results from the DC power and H$\sub$2//O in a chamber. And DC sputtering deposition is an effective way to fabricate Al electrodes with pronounced orientational characteristics without damage occurring to metal-organic interface during the sputtering deposition.

• Computers and Concrete
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• 제14권1호
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• pp.91-107
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• 2014

Using the principle of damage mechanics, zero-thickness pore pressure cohesive elements (PPCE) are used to simulate the casing-cement interface (CCI) and cement-rock interface (CRI). The traction-separation law describes the emergence and propagation of the PPCE. Mohr-coulomb criteria determines the elastic and plastic condition of cement sheath and rock. The finite element model (FEM) of delamination fractures emergence and propagation along the casing-cement-rock (CCR) interfaces during hydraulic fracturing is established, and the emergence and propagation of fractures along the wellbore axial and circumferential direction are simulated. Regadless of the perforation angle (the angle between the perforation and the max. horizontal principle stress), mirco-annulus will be produced alonge the wellbore circumferential direction when the cementation strength of the CCI and the CRI is less than the rock tensile strength; the delamination fractures are hard to propagate along the horizontal wellbore axial direction; emergence and propagation of delamination fractures are most likely produced on the shallow formation when the in-situ stresses are lower; the failure mode of cement sheath in the deep well is mainly interfaces seperation and body damange caused by cement expansion and contraction, or pressure testing and well shut-in operations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제24권9호
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• pp.693-696
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• 2011

Recently, amorphous oxide semiconductors (AOSs) based thin-film transistors (TFTs) have received considerable attention for application in the next generation displays industry. The research trends of AOSs based TFTs investigation have focused on the high device performance. The electrical properties of the TFTs are influenced by trap density. In particular, the threshold voltage ($V_{th}$) and subthreshold swing (SS) essentially depend on the semiconductor/gate-insulator interface trap. In this article, we investigated the effects of Ar plasma-treated $SiO_2$ insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide (a-IGZO) TFTs. We report on the improvement in interfacial characteristics between a-IGZO channel layer and gate insulator depending on Ar power in plasma process, since the change of treatment power could result in different plasma damage on the interface.