• Title/Summary/Keyword: interface charge

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Simulation of Characteristics Analysis by Total Ionizing Dose Effects in Partial Isolation Buried Channel Array Transistor (부분분리 매립 채널 어레이 트랜지스터의 총 이온화 선량 영향에 따른 특성 해석 시뮬레이션)

  • Je-won Park;Myoung-Jin Lee
    • Journal of IKEEE
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    • v.27 no.3
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    • pp.303-307
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    • 2023
  • In this paper, the creation of an Electron-Hole Pair due to Total Ionizing Dose (TID) effects inside the oxide of a Buried Channel Array Transistor (BCAT) device is induced, resulting in an increase in leakage current and threshold due to an increase in hole trap charge at the oxide interface. By comparing and simulating changes in voltage with the previously proposed Partial Isolation Buried Channel Array Transistor (Pi-BCAT) structure, the characteristics in leakage current and threshold voltage changed regardless of the increased oxide area of the Pi-BCAT device, compared to the asymmetrically doped BCAT structure. It shows superiority.

CMI Tolerant Readout IC for Two-Electrode ECG Recording (공통-모드 간섭 (CMI)에 강인한 2-전극 기반 심전도 계측 회로)

  • Sanggyun Kang;Kyeongsik Nam;Hyoungho Ko
    • Journal of Sensor Science and Technology
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    • v.32 no.6
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    • pp.432-440
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    • 2023
  • This study introduces an efficient readout circuit designed for two-electrode electrocardiogram (ECG) recording, characterized by its low-noise and low-power consumption attributes. Unlike its three-electrode counterpart, the two-electrode ECG is susceptible to common-mode interference (CMI), causing signal distortion. To counter this, the proposed circuit integrates a common-mode charge pump (CMCP) with a window comparator, allowing for a CMI tolerance of up to 20 VPP. The CMCP design prevents the activation of electrostatic discharge (ESD) diodes and becomes operational only when CMI surpasses the predetermined range set by the window comparator. This ensures power efficiency and minimizes intermodulation distortion (IMD) arising from switching noise. To maintain ECG signal accuracy, the circuit employs a chopper-stabilized instrumentation amplifier (IA) for low-noise attributes, and to achieve high input impedance, it incorporates a floating high-pass filter (HPF) and a current-feedback instrumentation amplifier (CFIA). This comprehensive design integrates various components, including a QRS peak detector and serial peripheral interface (SPI), into a single 0.18-㎛ CMOS chip occupying 0.54 mm2. Experimental evaluations showed a 0.59 µVRMS noise level within a 1-100 Hz bandwidth and a power draw of 23.83 µW at 1.8 V.

Effects of Mg on corrosion resistance of Al galvanically coupled to Fe (Fe와 galvanic couple된 알루미늄의 내식성에 미치는 마그네슘의 영향)

  • Hyun, Youngmin;Kim, Heesan
    • Corrosion Science and Technology
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    • v.12 no.1
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    • pp.40-49
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    • 2013
  • Effects of magnesium and pH on corrosion of aluminum galvanically coupled to iron have studied by using potentio- dynamic and static tests for polarization curves, Mott-Schottky test for analysis of semiconductor property, and GD-AES and XPS for film analysis. Pitting potential was sensitive to magnesium as an alloying element but not to pH, while passive current was sensitive to pH but not to magnesium. It was explained with, instead of point defect model (PDM), surface charge model describing that the ingression of chloride depends on the state of surface charge and passive film at film/solution interface is affected by pH. In addition, galvanic current of aluminum electrically coupled to iron was not affected by magnesium in pH 8.4, 0.2M citrate solution but was increased by magnesium at the solution of pH 9.1. The galvanic current at pH 9.1 increased with time at the initial stage and after the exposure of about 200 minute, decreased and stabilized. The behavior of the galvanic current was related with the concentration of magnesium at the surface. It agreed with the depletion of magnesium at the oxide surface by using glow discharge atomic emission spectroscopy (GD-AES). In addition, pitting potential of pure aluminum was reduced in neutral pH solution where chloride ion maybe are competitively adsorbed on pure aluminum. It was confirmed by the exponential decrease of pitting potential with log of [$Cl^-$] around 0.025 M of [$Cl^-$] and linear decrease of the pitting potential. From the above results, unlike magnesium, alloying elements with higher electron negativity, lowering isoelectric point (ISE), are recommended to be added to improve pitting corrosion resistance of aluminum and its alloys in neutral solutions as well as their galvanic corrosion resistance in weakly basic solutions.

PMOSFET Hot Carrier Lifetime Dominated by Hot Hole Injection and Enhanced PMOSFET Degradation than NMOSFET in Nano-Scale CMOSFET Technology (PMOSFET에서 Hot Carrier Lifetime은 Hole injection에 의해 지배적이며, Nano-Scale CMOSFET에서의 NMOSFET에 비해 강화된 PMOSFET 열화 관찰)

  • 나준희;최서윤;김용구;이희덕
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.7
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    • pp.21-29
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    • 2004
  • Hot carrier degradation characteristics of Nano-scale CMOSFETs with dual gate oxide have been analyzed in depth. It is shown that, PMOSFET lifetime dominate the device lifetime than NMOSFET In Nano-scale CMOSFETs, that is, PMOSFET lifetime under CHC (Channel Hot Carrier) stress is much lower than NMOSFET lifetime under DAHC (Dram Avalanche Hot Carrier) stress. (In case of thin MOSFET, CHC stress showed severe degradation than DAHC for PMOSFET and DAHC than CHC for NMOSFET as well known.) Therefore, the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor in upcoming Nano-scale CMOSFET technology. In case of PMOSFETs, CHC shows enhanced degradation than DAHC regardless of thin and thick PMOSFETs. However, what is important is that hot hole injection rather than hot electron injection play a important role in PMOSFET degradation i.e. threshold voltage increases and saturation drain current decreases due to the hot carrier stresses for both thin and thick PMOSFET. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method. Therefore, suppression of PMOSFET hot carrier degradation or hot hole injection is highly necessary to enhance overall device lifetime or circuit lifetime in Nano-scale CMOSFET technology

Detection of Acoustic Signal Emitted during Degradation of Lithium Ion Battery (리튬이온전지의 열화손상에 의한 음향방출 신호 검출)

  • Choi, Chan-Yang;Byeon, Jai-Won
    • Journal of the Korean Society for Nondestructive Testing
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    • v.33 no.2
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    • pp.198-204
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    • 2013
  • Acoustic emission(AE) signal was detected during charge and discharge of lithium ion battery to investigate relationships among cumulative count, discharge capacity, and microdamages. AE signal was received during accelerated charge/discharge cycle test of a coin-type commercial battery. A number of AE signals were successfully detected during charge and discharge, respectively. With increasing number of cycle, discharge capacity was decreased and AE cumulative count was observed to increase. Microstructural observation of the decomposed battery after cycle test revealed mechanical damages such as interface delamination and microcracking of the electrodes. These damages were attributed to sources of the detected AE signals. Based on a linear correlation between discharge capacity and cumulative count, feasibility of AE technique for evaluation of battery degradation was suggested.

Creating Electrochemical Sensors Utilizing Ion Transfer Reactions Across Micro-liquid/liquid Interfaces (마이크로-액체/액체 계면에서의 이온 이동 반응을 이용한 전기화학 센서 개발)

  • Kim, Hye Rim;Baek, Seung Hee;Jin, Hye
    • Applied Chemistry for Engineering
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    • v.24 no.5
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    • pp.443-455
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    • 2013
  • Electrochemical studies on charge transfer reactions across the interface between two immiscible electrolyte solutions (ITIES) have greatly attracted researcher's attentions due to their wide applicability in research fields such as ion sensing and biosensing, modeling of biomembranes, pharmacokinetics, phase-transfer catalysis, fuel generation and solar energy conversion. In particular, there have been extensive efforts made on developing sensing platforms for ionic species and biomolecules via gelifying one of the liquid phases to improve mechanical stability in addition to creating microscale interfaces to reduce ohmic loss. In this review, we will mainly discuss on the basic principles, applications and future aspects of various sensing platforms utilizing ion transfer reactions across the ITIES. The ITIES is classified into four types : (i) a conventional liquid/liquid interface, (ii) a micropipette supported liquid/liquid interface, (iii) a single microhole or an array of microholes supported liquid/ liquid interface on a thin polymer film, and (iv) a microhole array liquid/liquid interface on a silicon membrane. Research efforts on developing ion selective sensors for water pollutants as well as biomolecule sensors will be highlighted based on the use of direct and assisted ion transfer reactions across these different ITIES configurations.

Preparation of Electrocatalysts and Comparison of Electrode Interface Reaction for Hybrid Type Na-air Battery (Hybrid type Na-air battery를 위한 촉매들의 제조 및 전극 계면 반응 성능 비교)

  • Kim, Kyoungho
    • Journal of Adhesion and Interface
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    • v.22 no.1
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    • pp.1-7
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    • 2021
  • The importance of high capacity energy storage devices has recently emerged for stable power supply through renewable energy generation. From this point of view, the Na-air battery (NAB), which is a next-generation secondary battery, is receiving huge attention because it can realize a high capacity through abundant and inexpensive raw materials. In this study, activated carbon-based catalysts for hybrid type Na-air batteries were prepared and their characteristics were compared and analysed. In particular, from the viewpoint of resource recycling, activated carbon (Orange-C) was prepared using discarded orange peel, and performance was compared with Vulcan carbon, which is widely used. In addition, a Pt/C catalyst (homemade-Pt/C, HM-Pt/C) was synthesized using a modified polyol method to check whether the prepared activated carbon can be used as a supported catalyst, and a commercial Pt/C catalyst (Commercial Pt/C) and electrochemical performance were compared. The prepared Orange-C exhibited a typical H3 type BET isotherm, which is evidence that micropore and mesopore exist. In addition, in the case of HM-Pt/C, it was confirmed through TEM analysis that Pt particles were evenly distributed on the activated carbon supported catalyst. In particular, the HM-Pt/C-based NAB showed the smallest voltage gap (0.224V) and good voltage efficiency (92.34%) in the 1st galvanostatic charge-discharge test. In addition, the cycle performance test conducted for 20 cycles showed the most stable performance.

Improved Efficiency by Insertion of TiO2 Interfacial Layer in the Bilayer Solar Cells

  • Xie, Lin;Yoon, Soyeon;Kim, Kyungkon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.432.1-432.1
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    • 2016
  • We demonstrated that the power conversion efficiency (PCE) of bilayer solar cell was significantly enhanced by inserting interfacial layer between the organic bilayer film and the Al electrode. Moreover, the water contact angle shows that the bilayer solar cells suffer from the undesirable surface component which limits the charge transport to the Al electrode. The AFM measurement has revealed that the pre- and post-thermal annealing treatments results in different morphologies of the interfacial layer which is critical for the higher PCE of the bilayer solar cells. Furthermore we have investigated the electrical properties of the bilayer solar cells and obtained insights into the detailed device mechanisms. The transient photovoltage measurements suggests that the significantly enhanced Voc is caused by reducing the recombination at the interface between the organic films and the Al electrode. By inserting the TiO2 layer between the bilayer film and Al electrode, the open circuit voltage (Voc) was increased from 0.37 to 0.66V. Consequently, the power conversion efficiency (PCE) of bilayer solar cells was significantly enhanced from 1.23% to 3.71%. As the results, the TiO2 interfacial layer can be used to form an ohmic contact layer, serveing as a blocking layer to prevent the penetration of the Al, and to reduce the recombination at the interface.

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Convergence Research for Implementing NC Postprocessor Based Cloud Computing (클라우드컴퓨팅 기반의 NC포스트프로세서 구축을 위한 융합 연구)

  • Ryu, Gab-Sang
    • Journal of the Korea Convergence Society
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    • v.7 no.1
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    • pp.17-23
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    • 2016
  • In this paper, we describe a case of utilizing SaaS technology to build NC Post-processor(WBS) based cloud computing. Developed WPS system was implemented to provide stable and continuous system service by utilizing SCoD methodology. WPS is designed user interface module and control engine module. The interface module is downloaded in a client PC and the control engine is installed in cloud parm area. These modules are connected with computer network. WPS was completed a function test for sheet cutting field and mold manufacturing field, and it is processing a commercial service using with improve the user's convenience and adding a bill charge module.

Solution-Processed Quantum-Dots Light-Emitting Diodes with PVK/PANI:PSS/PEDOT:PSS Hole Transport Layers

  • Park, Young Ran;Shin, Koo;Hong, Young Joon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.146-146
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    • 2015
  • We report the enhanced performance of poly(N-vinylcarbozole) (PVK)/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)-based quantum-dot light-emitting diodes by inserting the polyaniline:poly (p-styrenesulfonic acid) (PANI:PSS) interlayer. The QD-LED with PANI:PSS interlayer exhibited a higher luminance and luminous current efficiency than that without PANI:PSS. Ultraviolet photoelectron spectroscopy results exhibited different electronic energy alignments of QD-LEDs with/without the PANI:PSS interlayer. By inserting the PANI:PSS interlayer, the hole-injection barrier at the QD layer/PVK interface was reduced from 1.45 to 1.23 eV via the energy level down-shift of the PVK layer. The reduced barrier height alleviated the interface carrier charging responsible for the deterioration of the current and luminance efficiency. This suggests that the insertion of PANI:PSS interlayer in QD-LEDs contributed to (i) increase the p-type conductivity and (ii) reduce the hole barrier height of QDs/PVK, which are critical factors leading to improve the efficiency of QD-LEDs.

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