• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.75-80
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• 2004

By the SOG (System-on-Glass) technology with excimer laser anneal process, the number of IC chips and the area of the mounted IC chips on the printed circuit board are reduced. In new circuit integrations on the glass substrate, we have developed D/A converter including the new capacitor array, amplifier comprising the original comparators and new display device with capturing images by integrated sensor into a pixel. This paper discusses the application of circuit integration of low-temperature poly-Si.

• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.404-408
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• 2003

The characterization for several multi-layer embedded inductors with different structures was investigated. The optimized equivalent circuit models for several test structures were obtained from HSPICE. Building blocks are modeled using Partial element equivalent circuit method. The mean and the standard deviation of model parameters were extracted and predictive modeling was performed on different test structure. From this study, the characteristic of multi-layer inductors can be predicted.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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• pp.419-421
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• 1996

We propose the digitized pressure sensor and the interface circuit to read directly the pressure signal in the digital form. The interface circuit has the control clock, comparator, and bit value decision circuit. The digitized sensor and interface circuit are integrated on the one chip using the post processing after IC fabrication. The dimension of the fabricated digitized pressure sensor is $3{\times}6{\times}1mm^3$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.944-947
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• 2005

Highly stable gate driver circuit using a-Si TFT has been developed. The circuit has dual-pull down structure, in which bias stress to the TFTs is relieved by alternating applied voltage. The circuit has been successfully integrated in 4-in. QVGA and 14-in. XGA TFT-LCD with a normal a-Si process, which are stable for over 2,000 hours at $60^{\circ}C$. The enhancement of stability of the circuit is attributed to retarded degradation of pull-down TFTs by AC driving.

• Transactions on Electrical and Electronic Materials
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• 제15권3호
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• pp.139-143
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• 2014

In this paper, an integrated low-voltage control circuit is introduced for a charge pump DC-DC boost converter. By exploiting the advantage of the integration of the feedback control circuit within CMOS technology, the charge pump boost converter offers a low-current operation with small ripple voltage. The error amplifier, comparator, and oscillator in the control circuit are designed with the supply voltage of 3.3 V and the operating frequency of 1.6~5.5 MHz. The charge pump converter with the 4 or 8 pump stages is measured in simulation. The test in the $0.35{\mu}m$ CMOS process shows that the load current and ripple ratio are controlled under 1 mA and 2% respectively. The output-voltage is obtained from 4.8 ~ 8.5 V with the supply voltage of 3.3 V.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2018년도 전력전자학술대회
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• pp.51-53
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• 2018

This paper describes the design and implementation of a circuit consisting of a simmer power supply unit and a series trigger unit that can be applicable to xenon lamp driving. An LCC resonant converter based on the continuous conduction mode (CCM) is applied to the simmer circuit and by using the current output control it is possible to maintain the ionization of the lamp which has the negative resistance load characteristic. At the same time, in order to generate a high voltage, a series trigger circuit which has a number of capacitors and diodes is designed. The generated high trigger output voltage could ionize the xenon gas. This paper explains the configuration and features of the integrated circuit system, and verifies the proposed design and stable operation of the xenon lamp. The experimental and simulation results show the not only rationality but also stability of the proposed circuit.

• 한국전자통신학회논문지
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• 제15권2호
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• pp.357-362
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• 2020

군 전술정보통신체계(TICN: Tactical Information and Communication Network)의 하위체계라 할 수 있는 전술다기능단말기(TMFT: Tactical Multi-Functional Terminal)는 개인 사용자에게 음성통화, 데이터 송수신, 멀티미디어 서비스를 제공하는 체계이다. 2011년도 개발당시 전술다기능단말기 전원회로는 충전IC를 거쳐 각각의 소자에 전원을 공급하는 구조였으나, 새로 개선된 전원회로는 충전IC를 별도로 구성하지 않고 PMIC(Power Management Integrated Circuit)를 통해 각 소자에 전원이 공급되도록 하였다. 본 논문에서는 개발단계의 전원회로설계가 적용된 전술다기능단말기와 신규 PMIC를 적용한 전술다기능단말기의 전원구조를 비교하였다. 그리고 소비전류, 충전시간, 충전 시 단말기 온도상승 등의 성능평가를 통해서 설계 개선 및 부품의 적합성을 검증하였다.

• Journal of Advanced Marine Engineering and Technology
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• 제33권1호
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• pp.144-152
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• 2009

This paper propose highly miniaturized active $90^{\circ}C$ phase difference power divider and combiner for application to wireless communication system. The conventional passive $90^{\circ}C$ power divider and combiner cannot be integrated on MMIC because of their very large circuit size. Therefore, the highly miniaturized active $90^{\circ}C$ phase difference power divider and combiner are required for a development of highly integrated MMIC. In this paper, the highly miniaturized active $90^{\circ}C$ phase difference power divider and combiner employing InGaAs/GaAs HBT were designed, fabricated on GaAs substrate. According to the results, the circuit size of fabricated active $90^{\circ}C$ phase difference power divider and combiner were $1.67{\times}0.87$ mm and $2.42{\times}1.05$ mm, respectively, which were 31.6% and 2.2% of the size of conventional passive branch-line coupler. The output gain division characteristic of proposed divider circuit showed 8.4 dB and 7.9 dB respectively, and output phase difference characteristic showed $-89.3^{\circ}C$. The output gain coupling characteristic of proposed combiner circuit showed 9.4 dB and 10.5 dB respectively, and output phase difference characteristic showed $-92.6^{\circ}C$. The highly miniaturized active $90^{\circ}C$ phase difference power divider and combiner exhibited good RF performances compared with the conventional passive branch-line coupler.

• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.175-188
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• 2011

As complementary metal-oxide semiconductor (CMOS) continues to scale down deeper into the nanoscale, various device non-idealities cause the I-V characteristics to be substantially different from well-tempered metal-oxide semiconductor field-effect transistors (MOSFETs). The last few years witnessed a dramatic increase in nanotechnology research, especially the nanoelectronics. These technologies vary in their maturity. Carbon nanotubes (CNTs) are at the forefront of these new materials because of the unique mechanical and electronic properties. CNTFET is the most promising technology to extend or complement traditional silicon technology due to three reasons: first, the operation principle and the device structure are similar to CMOS devices and it is possible to reuse the established CMOS design infrastructure. Second, it is also possible to reuse CMOS fabrication process. And the most important reason is that CNTFET has the best experimentally demonstrated device current carrying ability to date. This paper discusses and reviewsthe feasibility of the CNTFET's application at this point of time in integrated circuits design by investigating different types of circuit blocks considering the advantages that the CNTFETs offer.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제53권10호
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• pp.610-617
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• 2004

This paper presents a novel high frequency generating circuit integrated chopper-inverter using ZVS with high power-factor. The proposed topology is integrated half-bridge boost rectifier as power factor corrector(PFC) and half-bridge high frequency resonant inverter into a single-stage. The input stage of the half-bridge boost rectifier works in discontinuous conduction mode(DCM) with constant duty cycle and variable switching frequency. So that a boost converter makes the line current follow naturally the sinusoidal line voltage waveform. Simulation results have demonstrated the feasibility of the proposed high frequency resonant inverter. Characteristics values based on characteristics analysis through circuit analysis is given as basis data in design procedure. Also, experimental results are presented to verify theoretical discussion. This proposed inverter will be able to be practically used as a power supply in various fields as induction heating applications. fluorescent lamp and DC-DC converter etc.