• Bulletin of the Korean Chemical Society
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• v.32 no.8
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• pp.2607-2610
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• 2011

Monodispersed Ag/$TiO_2$ core/shell nanoparticles were synthesized in solution via colloid-seeded deposition process using Ag nanoparticles as colloid seeds and $Ti(SO_4)_2$ as Ti-source respectively. Silver nitrate was reduced to Ag nanoparticles with $N_2H_4{\cdot}H_2O$ in the presence of CTAB as stabilizing agent. The titania sols hydrolyzed by the $Ti(SO_4)_2$ solution deposited on the surface of Ag nanoparticles to form the Ag/$TiO_2$ core/shell nanoparticles. Inductively coupled plasma atomic emission spectrometry (ICP-AES) showed low amount of Ag ion leaching from the Ag/$TiO_2$ core/shell nanoparticles. The Ag/$TiO_2$ core/shell nanoparticles indicated excellent antibacterial effects against Escherichia coli and maintained long-term antibacterial property.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.394-399
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• 2016

The silicon dioxide ($SiO_2$) was deposited using various gas as oxygen and nitrous oxide ($N_2O$) in nowadays. In order to improve electrical characteristics and the interface state density ($D_{it}$) in low temperature, It was deposited with carbon dioxide ($CO_2$) and silane ($SiH_4$) gas by inductively coupled plasma chemical vapor deposition (ICP-CVD). Each $D_{it}$ of $SiO_2$ using $CO_2$ and $N_2O$ gas was $1.30{\times}10^{10}cm^{-2}{\cdot}eV^{-1}$ and $3.31{\times}10^{10}cm^{-2}{\cdot}eV^{-1}$. It showed $SiO_2$ using $CO_2$ gas was about 2.55 times better than $N_2O$ gas. After 10 years when the thin film was applied to metal/insulator/semiconductor(MIS)-nonvolatile memory(NVM), MIS NVM using $SiO_2$($CO_2$) on tunneling layer had window memory of 2.16 V with 60% retention at bias voltage from +16 V to -19 V. However, MIS NVM applied $SiO_2$($N_2O$) to tunneling layer had 2.48 V with 61% retention at bias voltage from +20 V to -24 V. The results show $SiO_2$ using $CO_2$ decrease the $D_{it}$ and it improves the operating voltage.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.273-276
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• 2011

Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-$SiO_2$ nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.

• Advances in nano research
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• v.10 no.3
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• pp.295-312
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• 2021

A new ionic liquid functionalized magnetic silica nanoparticle was synthesized and characterized and tested as an adsorbent. The adsorbent was used for magnetic solid phase extraction on ICP-MS method. Simultaneous determination of precious metal Au has been addressed. The method is simple and fast and has been applied to standard water and surface water analysis. A new method for separation/analysis of trace precious metal Au by Magnetron Solid Phase Extraction (MSPE) combined with ICP-MS. The element to be tested is rapidly adsorbed on CoFe2O4@SiO2@[BMIM]PF6 composite nano-adsorbent and eluted with thiourea. The method has a preconcentration factor of 9.5-fold. This method has been successfully applied to the determination of gold in actual water samples. Hydrophobic Ionic Liquids (ILs) 1-butyl-3-methylimidazole hexafluorophosphate ([BMIM]PF6) coated CoFe2O4@SiO2 nanoparticles with core-shell structure to prepare magnetic solid phase extraction agent (CoFe2O4@SiO2@ILs) and establish a new method of MSPE coupled with inductively coupled plasma mass spectrometry for separation/analysis of trace gold. The results showed that trace gold was adsorbed rapidly by CoFe2O4@SiO2@[BMIM]PF6 and eluanted by thiourea. Under the optimal conditions, preconcentration factor of the proposed method was 9.5-fold. The linear range, detection limit, correlation coefficient (R) and relative standard deviation (RSD) were found to be 0.01~1000.00 ng·mL-1, 0.001 ng·mL-1, 0.9990 and 3.4% (n = 11, c = 4.5 ng·mL-1). The CoFe2O4@SiO2 nanoparticles could be used repeatedly for 8 times. This proposed method has been successfully applied to the determination of trace gold in water samples.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.41-41
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• 2003

텅스텐(W)은 높은 thermal stability 와 process compatibility 및 우수한 corrosion r resistance 둥으로 integrated circuit (IC)의 gate 및 interconnection 둥으로의 활용이 대두되고 있으며, 차세대 thin film transistor liquid crystal display (TFT-LCD)의 gate 및 interconnection m materials 둥으로 사용되고 았다. 그러나, 이러한 장점을 가지고 있는 팅스텐 박막이 실제 공정상에 적용되가 위해서는 건식 식각이 주로 사용되는데, 이는 wet chemical 을 이용한 습식 식각을 사용할 경우 낮은 etch rate, line width 의 감소 및 postetch residue 잔류 동의 문제가 발생하기 때문이다. 또한 W interconnection etching 을 하기 위해서는 높은 텅스텐 박막의 etch rate 과 하부 layer ( (amorphous silicon 또는 poly-SD와의 높은 etch selectivity 가 필수적 이 라 할 수 있다. 그러 나, 지금까지 연구되어온 결과에 따르면 텅스탠과 하부 layer 와의 etch selectivity 는 2 이하로 매우 낮게 관찰되고 았으며, 텅스텐의 etch rate 또한 150nm/min 이하로 낮은 값을 나타내고 있다. 따라서 본 연구에서는 halogen-based inductively coupled plasma 를 이용하여 텅스텐 박막 식각시 여러 가지 첨가 가스에 따른 높은 텅스탠 박막의 etch rate 과 하부 layer 와의 높은 etch s selectivity 를 얻고자 하였으며, 그에 따른 식각 메커니즘에 대하여 알아보고자 하였다. $CF_4/Cl_2$ gas chemistry 에 첨 가 가스로 $N_2$와 Ar을 첨 가할 경 우 텅 스텐 박막과 하부 layer 간의 etch selectivity 증가는 관찰되지 않았으며, 반면에 첨가 가스로 $O_2$를 사용할 경우, $O_2$의 첨가량이 증가함에 따라 etch s selectivity 는 계속적으로 증가렴을 관찰할 수 있었다. 이는 $O_2$ 첨가에 따라 형성되는 WOF4 에 의한 텅스텐의 etch rates 의 감소에 비하여, $Si0_2$ 등의 형성에 의한 poly-Si etch rates 이 더욱 크게 감소하였기 때문으로 사료된다. W 과 poly-Si 의 식각 특성을 이해하기 위하여 X -ray photoelectron spectroscopy (XPS)를 사용하였으며, 식각 전후의 etch depth 를 측정하기 위하여 stylus p pmfilometeT 를 이용하였다.

• Journal of the Korean institute of surface engineering
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• v.41 no.3
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• pp.83-87
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• 2008

This study described the effects of RF power, DC bias voltage, chamber pressure and gas mixing ratio on the etch rates of TiN thin film and selectivity of TiN thin film to $SiO_2$ with $BCl_3$/Ar gas mixture. When the gas mixing ratio was $BCl_3$(20%)/Ar(80%) with other conditions were fixed, the maximum etch rate of TiN thin film was 170.6 nm/min. When the DC bias voltage increased from -50 V to -200 V, the etch rate of TiN thin film increased from 15 nm/min to 452 nm/min. As the RF power increased and chamber pressure decreased, the etch rate of TiN thin film showed an increasing tendency. When the gas mixing ratio was $BCl_3$(20%)/Ar(80%) under others conditions were fixed, the intensity of optical emission spectra from radical or ion such as Ar(750.4 nm), $Cl^+$(481.9 nm) and $Cl^{2+}$(460.8 nm) was highest. The TiN thin film was effectively removed by the chemically assisted physical etching in $BCl_3$/Ar ICP plasma.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.335-340
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• 2013

In this study, the plasma etching of the TaN thin film with $CH_4/BCl_3/Ar$ gas chemistries was investigated. The etch rate of the TaN thin film and the etch selectivity of TaN to $SiO_2$ was studied as a function of the process parameters, including the amount of $CH_4$. X-ray photoelectron spectroscopy (XPS) and Field-emission scanning electron microscopy (FE-SEM) was used to investigate the chemical states of the surface of the TaN thin film.

• Analytical Science and Technology
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• v.21 no.4
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• pp.316-325
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• 2008

An inductively coupled plasma mass spectrometry (ICP-MS) instrument equipped with flow injection-hydride generation system was used for the determination of trace arsenic in seawater sample. The accuracy in this method was verified by the analysis of certified reference materials (CRM) of seawater (CASS-4, NASS-5). The analytical results agreed with certified value within the range of uncertainty. The expanded uncertainties for CASS-4 and NASS-5 in this experiment were ranged from 6.2% to 6.8% obtained from repeated analyses of the CRMs (n=5). The detection limit of $As^+$ (m/z=74.9216) in this method was confirmed about 0.01 ug/kg. Linearity obtained from calibration curve of arsenic was excellent ($R^2=1$). The detection at $As^+$ (m/z=74.9216) and $AsO^+$ (m/z=90.9165) by using oxygen reaction gas in DRC mode was compared. Sensitivity at $AsO^+$ (m/z=90.9165) was decreased about 25-fold, but the analytical results are the same that at $As^+$ (m/z=74.9216).

• Journal of the Korean Vacuum Society
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• v.8 no.4B
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• pp.565-571
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• 1999

In this study, high-density plasma etching characteristics of ITO(indium tin oxide) films used for transparent electrode in dispaly devices were investigated. Plasma diagnostic and surface analysis tools were used to understand etch reaction mechanism. The etch rate of ITO was increased by the increase of reactive radicals such as H and $CH_3$ with the addition of moderate amount of $CH_4$ to Ar. However, the addition of excess amount of $CH_4$ decreased possibly due to the increased polymer formation on the ITO surface being etched. The increase of source power and bias boltage increased ITO etch rates but it decreased selectivities over under-layers $(SiO_2, Si_3N_4)$. The increase of working pressure up to 20mTorr also increased ITO etch rates, however the further increased of the pressure decreased ITO etch rates. From the analysis of XPS, a peak related to the polymer of hydrocarbon was observed on the etched ITO surface especially for high $CH_4$ conditions and it appears to affect ITO etch rates.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.249-249
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• 1999

GaN과 같은 III-nitride 반도체 관한 식각 기술의 연구는 blue-emitting laser diode(LD)를 위한 경면(mirror facet)의 형성뿐만아니라 새로운 display 용도의 light emitting diodes (LED), 고온에서 작동되는 광전소자 제조 등에도 그 중요성이 증대되고 있다. 최근에는 III-nitride 물질의 높은 식각속도와 미려하고 수직한 식각형상을 이루기 위하여 ECR(Electron Cyclotron Resonance)이나 ICP(Inductively Coupled Plasma)와 같은 고밀도 플라즈마 식각과 CAIBE(Chemically assisted ion beam etching)를 이용한 연구가 진행되고 있다. 현재 제조되어 지고 있는 LED 및 LD와 같은 광소자의 구조의 대부분은 p-GaN/AlGaN/InGaN(Q.W)/AlGaN/n-GaN 와 같은 여러 층의 형태로 이루어져 있다. 이중 InGaN는 광소자나 전자소자의 특성에 영향을 주는 가장 중요한 부분으로써 현재까지 보고된 식각연구는 undoped GaN에 대부분 집중되고 있고 이에 비해 소자 특성에 핵심을 이루는 InGaN의 식각특성에 관한 연구는 미흡한 상황이다. 본 연구에서는 고밀도 플라즈마원인 ICP 장비를 이용하여 InGaN를 식각하였고, 식각에는 Cl2/CH4, Cl2/Ar 플라즈마를 사용하였다. InGaN의 식각특성에 영향을 미치는 플라즈마의 특성을 관찰하기 위하여 quadrupole mass spectrometry(QMS)와 optical emission spectroscopy(PES)를 사용하였다. 기판 온도는 5$0^{\circ}C$, 공정 압력은 5,Torr에서 30mTorr로 변화시켰고 inductive power는 200~800watt, bias voltage는 0~-200voltage로 변화시켰으며 식각마스크로는 SiO2를 patterning 하여 사용하였다. n-GaN, p-GaN 층 이외에 광소자 제조시 필수적인 InGaN 층을 100% Cl2로 식각한 경우에 InGaN의 식각속도가 GaN에 비해 매우 낮은 식각속도를 보였다. Cl2 gas에 소량의 CH4나 Ar gas를 첨가하는 경우와 공정압력을 감소시키는 경우 식각속도는 증가하였고, Cl2/10%Ar 플라즈마에서 공정 압력을 감소시키는 경우 식각속도는 증가하였고, Cl2/10%CHF3 와 Cl2/10%Ar 플라즈마에서 공정압력을 15mTorr로 감소시키는 경우 InGaN과 GaNrks의 선택적인 식각이 가능하였다. InGaN의 식각속도는 Cl2/Ar 플라즈마의 이온에 의한 Cl2/CHF3(CH4) 플라즈마에서의 CHx radical 형성에 의하여 증가하는 것으로 사료되어 진다.