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http://dx.doi.org/10.4313/JKEM.2013.26.5.335

A Study on the Surface of the Dry Etched TaN Thin Film by Adding The CH4 Gas in BCl3/Ar Inductively Coupled Plasma  

Woo, Jong-Chang (Nano Convergence Sensor Research Section, Electronics and Telecommunications Research Institute)
Choi, Chang-Auck (Nano Convergence Sensor Research Section, Electronics and Telecommunications Research Institute)
Yang, Woo-Seok (Nano Convergence Sensor Research Section, Electronics and Telecommunications Research Institute)
Joo, Young-Hee (School of Electrical and Electronics Engineering, Chung-Ang University)
Kang, Pil-Seung (School of Electrical and Electronics Engineering, Chung-Ang University)
Chun, Yoon-Soo (School of Electrical and Electronics Engineering, Chung-Ang University)
Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.26, no.5, 2013 , pp. 335-340 More about this Journal
Abstract
In this study, the plasma etching of the TaN thin film with $CH_4/BCl_3/Ar$ gas chemistries was investigated. The etch rate of the TaN thin film and the etch selectivity of TaN to $SiO_2$ was studied as a function of the process parameters, including the amount of $CH_4$. X-ray photoelectron spectroscopy (XPS) and Field-emission scanning electron microscopy (FE-SEM) was used to investigate the chemical states of the surface of the TaN thin film.
Keywords
Etch; TaN; Plasma; ICP; $BCl_3$/Ar; $CH_4$;
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1 A. Le Gouil, O. Joubert, G. Cunge, T. Chevolleau, L. Vallier, B. Chenevier and I. Matko, J. Vac. Sci. Technol. B, 25, 767 (2007).   DOI   ScienceOn
2 S. H. Kim, S. H. Woo, H. C. Kim, I. H. Kim, K. W. Lee, W. H. Jeong, T. Y. Park, and H. T. Jeon, J. Korean Phys. Soc., 52, 1103 (2008).   DOI   ScienceOn
3 C. Q. Jiao, R. Nagpal, P. Haaland, Chem. Phys. Lett., 265, 242 (1997).
4 M. H. Shin, S. W. Na, N. E. Lee, and J. H. Ahn, Thin Solid Films, 506, 230 (2006).
5 F. A. Khan, L. Zhou, V. Kumar, I. Adesida, and R. Okojie, Mat. Sci. Eng. B, 95, 51 (2002).   DOI   ScienceOn
6 S. M. Koo, D. P. Kim, K. T. Kim, and C. I. Kim, Mat. Sci. Eng. B, 118, 201 (2005).   DOI   ScienceOn
7 M. L. Green, M. Y. Ho, B. Busch, G. D. Wilk, T. Sorsch, T. Conard, B. Brijs, W. Vandervorst, P. I. Raisanen, D. Muller, M. Bude, and J. Grazul, J. Appl. Phys., 92, 7168 (2002).   DOI   ScienceOn
8 C. S. Kang, H. J. Cho, Y. H. Kim, R. Choi, K. Onishi, A. Shahriar, and J. C. Lee, J. Vac. Sci. Technol. B, 21, 2026 (2003).   DOI   ScienceOn
9 C. K. Hu, L. Gignac, S. G. Malhotra, R. Rosenberg, and S. Boettcher, Appl. Phys. Lett., 78, 904 (2001).   DOI   ScienceOn
10 K. H. Min, K. C. Chun, and K. B. Kim, J. Vac. Sci. Technol. B, 14, 3263 (1996).   DOI   ScienceOn
11 J. S. Park, M. J. Lee, C. S. Lee, and S. W. Kang, Electrochem. Solid State Lett., 4, C17 (2001).   DOI   ScienceOn
12 A. Arranz and C. Palacio, Surf. Interface Anal. 29, 653 (2000).   DOI   ScienceOn
13 P. Lamour, P. Fioux, A. Ponche, M. Nardin, M. F. Vallat, P. Dugay, J. P. Brun, N. Moreaud, and J. M. Pinvidic, Surf. Interface Anal., 40, 1430 (2008).   DOI   ScienceOn
14 S. K. Yang, H. H. Kim, B. H. O, S. G. Lee, E. H. Lee, S. G. Park, S. P. Chang, J. G. Lee, and H. Y. Song, J. Korean Phys. Soc., 51, S198 (2007).   DOI   ScienceOn
15 M. H. Shin, M. S. Park, N. E. Lee, J. Kim, C. Y. Kim, and J. Ahn, J. Vac. Sci. Technol. A, 24, 1373 (2006).   DOI   ScienceOn
16 K. Nakamura, T. Kitagawa, K. Osari, K. Takahashi, and K. Ono, Vacuum, 80, 761 (2006).   DOI   ScienceOn
17 B. H. Lee, R. Choi, L. Kang, S. Gopalan, R. Nieh, K. Onishi, Y. Jeon, W. J. Qi, C. Kang, and Jack C. Lee, Tech. Dig. Int. Electron Devices Meet, 39 (2000).