• Korean Journal of Materials Research
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• v.33 no.9
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• pp.372-376
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• 2023

Transparent conductive tungsten (W) doped indium oxide (In₂O₃; IWO) films were deposited at different substrate bias voltage (-V_b) conditions at room temperature on glass substrates by radio frequency (RF) magnetron sputtering and the influence of the substrate bias voltage on the optical and electrical properties was investigated. As the substrate bias voltage increased to -350 V_b, the IWO films showed a lower resistivity of 2.06 × 10^-4 Ωcm. The lowest resistivity observed for the film deposited at -350 V_b could be attributed to its higher mobility, of 31.8 cm²/Vs compared with that (6.2 cm²/Vs) of the films deposited without a substrate bias voltage (0 V_b). The highest visible transmittance of 84.1 % was also observed for the films deposited at the -350 V_b condition. The X-ray diffraction observation indicated the IWO films deposited without substrate bias voltage were amorphous phase without any diffraction peaks, while the films deposited with bias voltage were polycrystalline with a low In₂O₃ (222) diffraction peak and relatively high intensity (431) and (046) diffraction peaks. From the observed visible transmittance and electrical properties, it is concluded that the opto-electrical performance of the polycrystalline IWO film deposited by RF magnetron sputtering can be enhanced with effective substrate bias voltage conditions.

• Journal of Surface Science and Engineering
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• v.56 no.6
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• pp.420-426
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• 2023

We prepared a highly sensitive hydrogen (H₂) sensor based on Indium oxides (In₂O₃) porous nanoparticles (NPs) loaded with Platinum (Pt) nanoparticle in the range of 1.6~5.7 at.%. In₂O₃ NPs were fabricated by microwave irradiation method, and decorations of Pt nanoparticles were performed by electroless plating on In₂O₃ NPs. Crystal structures, morphologies, and chemical information on Pt-loaded In₂O₃ NPs were characterized by grazing-incident X-ray diffraction, field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, respectively. The effect of the Pt nanoparticles on the H₂-sensing performance of In₂O₃ NPs was investigated over a low concentration range of 5 ppm of H₂ at 150-300 ℃ working temperatures. The results showed that the H₂ response greatly increased with decreasing sensing temperature. The H₂ response of Pt loaded porous In₂O₃ NPs is higher than that of pristine In₂O₃ NPs. H₂ gas selectivity and high sensitivity was explained by the extension of the electron depletion layer and catalytic effect. Pt loaded porous In₂O₃ NPs sensor can be a robust manner for achieving enhanced gas selectivity and sensitivity for the detection of H₂.

• Journal of Sensor Science and Technology
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• v.33 no.1
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• pp.56-61
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• 2024

The quality of the display can be managed by effectively managing the temperature generated by the panel during use. Conventional display panels rely on an external reference resistor for temperature monitoring. However, this approach is easily affected by external factors such as temperature variations from the driving circuit and chips. These variations reduce reliability, causing complicated mounting owing to the external chip, and cannot monitor the individual pixel temperatures. However, this issue can be simply and efficiently addressed by integrating temperature sensors during the display panel manufacturing process. In this study, we fabricated and analyzed a temperature sensor integrated into an a-IGZO (amorphous indium-gallium-zinc-oxide) TFT array that was to precisely monitor temperature and prevent the deterioration of OLED display pixels. The temperature sensor was positioned on top of the oxide TFT. Simultaneously, it worked as a light shield layer, contributing to the reliability of the oxide. The characteristics of the array with integrated temperature sensors were measured and analyzed while adjusting the temperature in real-time. By integrating a temperature sensor into the TFT array, monitoring the temperature of the display became easier and more accurate. This study could contribute to managing the lifetime of the display.

• Korean Journal of Optics and Photonics
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• v.35 no.2
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• pp.61-70
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• 2024

We demonstrate a laser power meter calibration system based on 12-diode laser sources coupled to single-mode fibres in a wavelength range from 400 to 1,600 nm. In our system, three laser power controllers ensure that the output power uncertainty of all laser sources is less than 0.1% (k=2). In addition, all laser beams are adjusted to have similar beam sizes of approximately 2 mm (1/e²-width) at the measurement position to minimise unmeasured laser power on a detector. As a reference detector, we use an integrating sphere combined with silicon and indium gallium arsenide photodiodes to minimise the non-uniformity and non-linearity of responsivity. The minimum uncertainty of the calibration system is estimated to be 1.1% (k=2) for most laser wavelengths.

• Journal of Sensor Science and Technology
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• v.33 no.5
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• pp.305-309
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• 2024

Trimethylamine (TMA) is an organic amine gas that serves as a key indicator for evaluating the freshness of seafood. We synthesized a highly sensitive trimethylamine (TMA) sensor based on porous indium oxide (In₂O₃) nanoparticles (NPs) loaded with CuO in the range of 6.7 to 28.4 at.%. CuO was loaded by hydrazine reduction onto as prepared In₂O₃ NPs using the microwave irradiation method. Crystal structures, morphologies, and chemical composition of CuO/In₂O₃ nanostructures (NSs) were characterized by X-ray diffraction, field emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and inductively coupled plasma mass spectrometry. The response of the 23.8 at.% CuO/In₂O₃ to 2.5 ppm TMA at 325℃ was 5.7, which was 2.8 times higher than that of porous In₂O₃ NPs. The high sensitivity and selective detection of TMA were attributed to electronic interactions between CuO and In₂O₃ and the high catalytic activity of CuO to TMA. Altogether, this CuO/In₂O₃ sensor could be used in the future to detect low concentrations of TMA, thereby aiding in the storage and distribution of marine food resources.

• Nuclear Engineering and Technology
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• v.56 no.10
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• pp.4423-4436
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• 2024

The development and assessment of pharmaceutical dosage forms make considerable use of gamma-scintigraphy. Gamma scintigraphy is an imaging technique that is integrated with CT to assess and evaluate the targeting of drugs to various delivery sites, the impact of treatment, and the severity of the disease. A small number of radioisotopes were tagged with the delivery system and emitted radiation can be visualized by the gamma camera which forms a 2-D image displaying the tissue-specific distribution of radioactivity. The isotopes that are used widely include Technetium-99 m (99Tc), Iodine (131I), Fluorodeoxyglucose (18F-FDG), Fluoromisonidazole (18F-FMISO) and Gallium (Ga67), Indium (111In). This review mainly covers different applications of gamma scintigraphy for the assessment of drug targeting via different routes to different organs and their visualization by gamma scintigraphy. The review mainly focuses assessment of drug targeting in the tumor tissue, thyroid gland, brain, pulmonary pathway, skin deposition, detection of renal impairment as well as cardiac diseases, drug release from formulations, drug deposition in arthritis, drug retention in the scalp, and behavior of formulation when administered via intra-vaginal route. Various pre-clinical and clinical studies were included in the review that demonstrates the importance and future of gamma scintigraphy in sensing drug delivery.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.459-467
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• 2009

$Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were prepared on indium-tin-oxide(ITO)-coated glass substrates by using thermal evaporation. The crystallization was achieved by annealing the as-deposited films in flowing nitrogen. X-ray diffraction spectra showed that the $Cd_2GeSe_4$ and the $Cd_2GeSe_4:Co^{2+}$ films were preferentially grown along the (113) orientation. The crystal structure was rhomohedral(hexagonal) with lattice constants of $a=7.405\;{\AA}$ and $c=36.240\;{\AA}$ for $Cd_2GeSe_4$ and $a=7.43\;{\AA}$ and $c=36.81\;{\AA}$ for $Cd_2GeSe_4:Co^{2+}$ films. From the scanning electron microscope images, the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were plated, and the grain size increased with increasing annealing temperature. The optical energy band gap, measured at room temperature, of the as-deposited $Cd_2GeSe_4$ films was 1.70 eV and increased to about 1.74 eV and of the as-deposited $Cd_2GeSe_4:Co^{2+}$ films was 1.79 eV and decreased to about 1.74 eV upon annealing in flowing nitrogen at temperatures from $200^{\circ}C$ to $500^{\circ}C$. The dynamical behavior of the charge carriers in the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were investigated by using the photoinduced discharge characteristics technique.

• Journal of the Korean Society of Radiology
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• v.5 no.2
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• pp.93-96
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• 2011

Currently, the development of direct conversion radiation detector using photoconductor materials is progressing in widely. Among of theses photoconductor materials, mercuric iodide compound than amorphous selenium has excellent absorption and sensitivity of high energy radiation. Also, the detection efficiency of signal generated in photoconductor film varies by electric filed and geometric distribution according to top-bottom electrode size. Therefore, in this work, the x-ray detection characteristics are investigated about the size of top electrode in $HgI_2$ photoconductor film. For sample fabrication, to solve the problem that is difficult to make a large area film, we used the spatial paste screen-print method. And the sample thickness is $150{\mu}m$ and an film area size is $3cm{\times}3cm$ on ITO-coated glass substrate. ITO(Indium-Tin-Oxide) electrode was used as top electrode using a magnetron sputtering system and each area is $3cm{\times}3cm$, $2cm{\times}2cm$ and $1cm{\times}1cm$. From experimental measurement, the dark current, sensitivity and SNR of the $HgI_2$ film are obtained from I-V test. From the experimental results, it shows that the sensitivity increases in accordance with the area of the electrode but the SNR is decreased because of the high dark current. Therefore, the optimized size of electrode is importance for the development of photoconductor based x-ray imaging detector.

• Journal of Veterinary Clinics
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• v.30 no.5
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• pp.346-352
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• 2013

The study was aimed to investigate the influence of diode laser on osteoarthritis (OA) of stifle joint induced by anterior cruciate ligament transection (ACLT). Sixty 10-week-old male Sprague-Dawley rats were used in this study. Right stifle joint was operated to create ACLT or sham. There were five study groups: control, Sham, ACLT, ACLT + Laser irradiation (ACLT+L) and ACLT + meloxicam administration (ACLT+M). Low-level laser therapy (LLLT) was applied at the operated stifle joint twice a week using an 808-nm indium-gallium-arsenide (InGaAs) diode laser during 8-week experimental period. Radiographical, gross morphological and histopathological findings were examined at 2, 4 and 8 weeks post-surgery. Radiography, CBC and chemistry tests showed no significant difference between groups. ACLT+L group showed remarkable cartilage damages compared with sham group morphologically and histopathologically at 2, 4 and 8 weeks after surgery. ACLT+M group also had more cartilage damages compared with sham group. Low-level laser therapy (LLLT) showed limitation to prevent progression of OA in the rat anterior cruciate ligament transection models; on the contrary it accelerated cartilage damage. It is assumed that the aggravating results of LLLT in this study might be due to excessive unstable movement of stifle joint from the pain-relieving effect of LLLT, rather than direct damaging effect of irradiation since LLLT did not affect cell viability.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.321-322
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• 2012

의료용 방사선 장비는 초기의 아날로그 방식의 필름 및 카세트에서 진보되어 현재는 디지털 방식의 DR (Digital Radiography)이 널리 사용되며 그에 관한 연구개발이 활발히 진행되고 있다. DR은 크게 간접방식과 직접방식의 두 분류로 나눌 수 있는데, 간접방식은 X선을 흡수하면 가시광선으로 전환하는 형광체(Scintillator)를 사용하여 X선을 가시광선으로 전환하고, 이를 Photodiode와 같은 광소자로 전기적 신호로 변환하여 방사선을 검출하는 방식을 말하며, 직접 방식은 X선을 흡수하면 전기적 신호를 발생 시키는 광도전체(Photoconductor)를 사용하여 광도전체 양단 전극에 고전압을 인가한 형태를 취하고 있는 가운데, X선이 조사되면 일차적으로 광도전체 내부에서 전자-전공쌍(Electron-hole pair)이 생성된다. 이들은 광도전체 양단의 인가되어 있는 전기장에 의해 전자는 +극으로, 전공은 -극으로 이동하여 아래에 위치한 Active matrix array을 통해 방사선을 검출하는 방식이다. 본 연구에서는 직접방식 X-ray 검출기에서 활용되는 a-Se을 ITO (Indium Thin oxide) glass 상단에 Thermal evaporation증착을 이용하여 두께 $50{\mu}m$, 33 넓이로 증착 시킨 다음, a-Se상단에 Sputtering증착을 이용하여 ITO를 11 cm, 22 cm, $2.7{\times}2.7cm$ 넓이로 증착시켜 상하부의 ITO를 Electrode로 이용하여 직접방식의 X-ray검출기 샘플을 제작하였다. 제작 과정 중 a-Se의 Thermal evaporation증착 시, 저진공 $310^{-3}_{Torr}$, 고진공 $2.210^{-5}_{Torr}$에서 보트의 가열 온도를 두 번의 스텝으로 나누어 증착 시켰다. 첫 번째 스텝 $250^{\circ}C$, 두 번째 스텝은 $260^{\circ}C$의 조건으로 증착하여 보트 내의 a-Se을 남기지 않고 전량을 소모할 수 있었으며, 스텝간의 온도차를 $10^{\circ}C$로 제어하여 균일한 박막을 형성 할 수 있었다. Sputtering증착 시, 저진공 $2.510^{-3}$, 고진공 $310^{-5}$에서 Ar, $O_2$를 사용하여 100 Sec간 플라즈마를 생성시켜 ITO를 증착하였다. 제작된 방사선 각각의 검출기 샘플 양단의 ITO에 500V의 전압을 인가하고, 진단 방사선 범위의 70 kVp, 100 mA, 0.03 sec 조건으로 X-ray를 조사시켜 ITO넓이에 따른 민감도(Sensitivity)와 암전류(Dark current)를 측정하였다. 측정결과 민감도(Sensitivity)는 X-ray샘플의 두께에 따른 $1V/{\mu}m$ 기준 시, 증착된 ITO의 넓이가 11 cm부터 22 cm, $2.7{\times}2.7cm$까지 각각 $7.610nC/cm^2$, $8.169nC/cm^2$, $6.769nC/cm^2$로 22 cm 넓이의 샘플이 가장 높은 민감도를 나타내었으나, 암전류(Dark current)는 $1.68nA/cm^2$, $3.132nA/cm^2$, $5.117nA/cm^2$로 11 cm 넓이의 샘플이 가장 낮은 값을 나타내었다. 이러한 데이터를 SNR (Signal to Noise Ratio)로 합산 하였을 시 104.359 ($1{\times}1$), 60.376($2{\times}2$), 30.621 ($2.7{\times}2.7$)로 11 cm 샘플이 신호 대 별 가장 우수한 효율을 나타냄을 알 수 있었다. 따라서 ITO박막의 면적이 클수록 민감도는 우수하나 그에 따른 암전류의 증가로 효율이 떨어짐을 검증 할 수 있었으며, 이는 ITO면적이 넓어짐에 따른 저항의 증가로 암전류에 영향을 끼침을 할 수 있었다. 본 연구를 통해 a-Se의 ITO 박막 면적에 따른 전기적 특성을 검증할 수 있었다.