• International Journal of Contents
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• v.6 no.4
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• pp.22-29
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• 2010

In flash memory, many previous garbage collection methods only merge blocks statically and do not consider the contents of buffer. These schemes may cause more unnecessary block erase operations and page copy operations. However, since flash memory has the limitation of maximum rate and life cycle to delete each block, an efficient garbage collection method to evenly wear out the flash memory region is needed. This paper proposes a memory compaction scheme based on block-level buffer for flash memory. The proposed scheme not only merges the data blocks and the corresponding log block, but also searches for the block-level buffer to find the corresponding buffer blocks. Consequently, unnecessary potential page copying operations and block erasure operations could be reduced, thereby improving the performance of flash memory and prolonging the lifetime of flash memory.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.7
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• pp.30-36
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• 1998

Memory management is one of the most important problems in implementing viterbi decoders. This paper introduces a novel traceback scheme for memory management of high-speed viterbi decoders. The new method balances the read and the write oeprations by inserting dummy write operations into the traceback process, resulting in simpler memory access schemes. It is suitable for VLSI implementation since it uses minimal memory requirements, it does not need global interconnections, and its address genration shceme for accessig memory contents is very simple.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.3
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• pp.141-157
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• 2001

Highly reliable packaged 64kbit ferroelectric memories with $0.8{\;}\mu\textrm{m}$ CMOS ensuring ten-year retention and imprint at 125^{\circ}C$ have been successfully developed. These superior reliabilities have resulted from steady integration schemes free from the degradation, due to layer stress and attacks of process impurities. The resent results of research and development for ferroelectric memories at Hynix Semiconductor Inc. are summarized in this invited paper.

• Korean Journal of Psychosomatic Medicine
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• v.9 no.1
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• pp.3-15
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• 2001

The term 'memory' has acquired so many meanings today that it is not even confined to the mental domain any longer, although it is etymologically derived from the Anglo-Saxon word 'gemund', meaning mind. In its most typical sense, memory can be defined as 'the reawakening of the past in the service of present'. But in many papers, the term memory has been used in a various different meaning, which made the interpretation of the research result very complicated. Recently there has been tremendous development in the neurobiological researches with regard to the memory. This paper reviewed the concept, history, and current tendencies of the memory and memory researches comprehensively for the purpose of showing future direction of the memory researches.

• The KIPS Transactions:PartA
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• v.11A no.3
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• pp.157-162
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• 2004

This paper suggests the CAMD(Compression Algorithm for in-Memory Data) algorithm that is not moved the pages into the swap space by assigning the compressed cache area in the main memory. The CAMD algorithm that supports the virtual memory system takes high memory usability and performance benefit by reducing the page fault. The memory data is not general data. It is extraordinary data format. In general it consists of specific form of data. Therefore. the CAMD algorithm can compress this data efficiently.

• IEMEK Journal of Embedded Systems and Applications
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• v.3 no.3
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• pp.158-166
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• 2008

These days, mobile embedded systems adopt flash memory capable of XIP feature since they can reduce memory usage, power consumption, and software load time. XIP provides direct access to ROM and flash memory for processors. However, using XIP incurs unnecessary degradation of applications' performance because direct access to ROM and flash memory shows more delay than that to main memory. In this paper, we propose a memory management framework, dynamic XIP, which can resolve the performance degradation of using XIP. Using a constrained RAM cache, dynamic XIP can dynamically change XIP region according to page access pattern to reduce performance degradation in execution time or energy consumption resulting from native XIP problem. The proposed framework consists of a page profiler gathering applications' memory access pattern using PMU and an XIP manager deciding that a page is accessed whether in main memory or in flash memory. The proposed framework is implemented and evaluated in Linux kernel. Our evaluation shows that our framework can reduce execution time at most 25% and energy consumption at most 22% compared with using XIP-only case adopted in general mobile embedded systems. Moreover, the evaluation shows that in execution time and energy consumption, our modified LRU algorithm with code page filters can reduce more than at most 90% and 80% respectively compared with applying just existing LRU algorithm to dynamic XIP.

• The KIPS Transactions:PartA
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• v.13A no.5 s.102
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• pp.413-420
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• 2006

Most vendors of digital signal processors (DSPs) support a Harvard architecture, which has two or more memory buses, one for program and one or more for data and allow the processor to access multiple words of data from memory in a single instruction cycle. We already addressed how to efficiently assign data to multi-memory banks in our previous work. This paper reports on our recent attempt to optimize run-time memory. The run-time environment for dual data memory banks (DBMBs) requires two run-time stacks to control activation records located in two memory banks corresponding to calling procedures. However, activation records of two memory banks for a procedure are able to have different size. As a consequence, dual run-time stacks can be unbalanced whenever a procedure is called. This unbalance between two memory banks causes that usage of one memory bank can exceed the extent of on-chip memory area although there is free area in the other memory bank. We attempt balancing dual run-time slacks to enhance efficiently utilization of on-chip memory in this paper. The experimental results have revealed that although our algorithm is relatively quite simple, it still can utilize run-time memories efficiently; thus enabling our compiler to run extremely fast, yet minimizing the usage of un-time memory in the target code.

• Proceedings of the IEEK Conference
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• 2003.07d
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• pp.1283-1286
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• 2003

Human can update the memory with new information not forgetting acquired information in the memory. ART(Adaptive Resonance Theory) does not need to change all information. The methodology of ART is followed. The ART updates the memory with the new information that is unknown if it is similar with the memorized information. On the other hand, if it is unknown information the ART adds it to the memory not updating the memory with the new one. This paper shows that ART is able to classify sensory information of a certain object. When ART receives new information of the object as an input, it searches for the nearest thing among the acquired information in the memory. If it is revealed that new information of the object has similarity with the acquired object, the model is updated to reflect new information to the memory. When new object does not have similarity with the acquired object, the model register the object into new memory

• Journal of Applied Reliability
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• v.10 no.1
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• pp.65-71
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• 2010

NAND-type SONOS with a separated double-gate FinFET structure (SDF-Fin SONOS) flash memory devices are proposed to reduce the unit cell size of the memory device and increase the memory density in comparison with conventional non volatile memory devices. The proposed memory device consists of a pair of control gates separated along the direction of the Fin width. There are two unique alternative technologies in this study. One is a channel doping method and the other is an oxide thickness variation method, which are used to operate the SDF-Fin SONOS memory device as two-bit. The fabrication processes and the device characteristics are simulated by using technology comuter-adided(TCAD). The simulation results indicate that the charge trap probability depends on the different channel doping concentration and the tunneling oxide thickness. The proposed SDG-Fin SONOS memory devices hold promise for potential application.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.197-204
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• 2002

DRAM, SRAM, and FLASH memory are three major memory devices currently used in most electronic applications. But, they have very distinct attributes, therefore, each memory could be used only for limited applications. MRAM (Magneto-resistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. To be a commercially competitive memory device, scalability is an important factor as well. This paper is testing the actual electrical parameters and the scaling factors to limit MRAM technology in the semiconductor based memory device by an actual integration of MRAM core cell. Electrical tuning of MOS/MTJ, and control of resistance are important factors for data sensing, and control of magnetic switching for data writing.