• Corrosion Science and Technology
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• 제2권3호
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• pp.109-116
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• 2003

It is well known that SSCC (sulfide stress corrosion cracking) is caused by drastic ingression of hydrogen during the service and accumulation of hydrogen near the potential crack initiation site in the material. It is important to characterize the hydrogen trapping behavior to evaluate the service performance of the high strength pipeline steels. In this study. the relationship between the hydrogen trapping behavior and SSCC susceptibility is evaluated in terms of alloy composition, microstructure and carbide behavior. The hydrogen trapping behavior was measured by electrochemical hydrogen permeation test cell (Devanathan cell). The SSCC susceptibility is evaluated by constant extension rate test and constant strain lest method. The hydrogen trapping behavior is affected greatly by microstructure and nature of carbide particles. The fine TiC, and NbC in the matrix of ferritic structure acts as strong irreversible trap sites whereas the bainitic structure acts as reversible trap site. The SSCC susceptibility is closely related to not only the hydrogen trapping behavior but also the loading condition. As the activity of reversible trap site increases, SSCC susceptibility decreases under static loading condition below yield strength, whereas SSCC susceptibility increases under dynamic loading condition or above yield strength. As the activity of irreversible trap site increases. SSCC susceptibility increases regardless of loading condition. It is cased by the mixed effect of dislocation on hydrogen diffusion and trapping behavior.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.157-158
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• 2007

Effects of post-metallization anneal (PMA) on interface trap characteristics of Si-$SiO_2$ are studied. The conventional PMA method utilizes forming gas anneal, where 10% hydrogen in nitrogen atmosphere is used. A new PMA method utilizes hydrogen rich PECVD- silicon nitride $(SiN_x)$ film as a hydrogen diffusion source and a out-diffusion blocking layer. It can be shown through charge pumping current measurement that the new PMA is indeed effective to decrease Si-$SiO_2$ interface trap density.

• Transactions on Electrical and Electronic Materials
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• 제18권6호
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• pp.316-319
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• 2017

A new approach to improving the electrical characteristics and optical response of a polysilicon-based metal-semiconductor-metal (MSM) photodetector is proposed. To understand the cause of current restriction in the MSM photodetector, modified trap mechanisms are suggested, which include interfacial electron traps at the metal/polysilicon interface and silicon dangling bonds between silicon crystallite grains. Those traps were passivated using hydrogen ion implantation with subsequent post-annealing. Photodetectors that were ion-implanted under optima conditions exhibited improved photoconductivity and reduced dark current instability, implying that the hydrogen bonds in the polysilicon influence the simultaneous decreases in the density of dangling bonds at grain boundaries and the trapped positive charges at the contact interface.

• Corrosion Science and Technology
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• 제22권2호
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• pp.131-136
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• 2023

The aim of this study was to investigate effects of microstructure control on hydrogen diffusivity, trap activation energy, and cracking behaviors of high-strength steel using a range of experimental techniques. Results of this study showed that susceptibility to hydrogen induced cracking (HIC) was significantly associated with hydrogen diffusivity and trap activation energy, which were primarily influenced by the microstructure. On the other hand, microstructural modifications had no significant impact on electrochemical polarization behavior on the surface at an early corrosion stage. To ensure high resistance to HIC of the steel, it is recommended to increase the cooling rate during normalizing to avoid formation of banded pearlite in the microstructure. However, it is also essential to establish optimal heat treatment conditions to ensure that proportions of bainite, retained austenite (RA), and martensite-austenite (MA) constituents are not too high. Additionally, post-heat treatment at below A₁ temperature is desired to decompose locally distributed RA and MA constituents.

• 한국재료학회지
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• 제15권5호
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• pp.306-312
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• 2005

The hydrogen sorption properties of $Ti_{0.3}Zr_{0.2}V_{0.5}$ NEC(non-evaporable getter) alloy and its hydrides were evaluated at room temperature. The alloy and hydride powders were prepared by the Hydride-DeHydride(HDH) method. The hydrogen sorption speed of $Ti_{0.3}Zr_{0.2}V_{0.5}$ alloy was measured to increase with the amounts of hydride phase in the getter. The hydrogen sorption speeds of $Ti_{0.3}Zr_{0.2}V_{0.5},\;(Ti_{0.3}Zr_{0.2}V_{0.5})H_{1.52},\;and\;(Ti_{0.3}Zr_{0.2}V_{0.5})H_{1.94}$ were 2.22, 3.14 and 5.08 liter/sec, respectively. The unexpected enhancement of hydrogen sorption speed with the presence of the hydride phase is considered to be due to the pre-saturation of hydrogen trap sites which can retard the diffusion of hydrogen in the alloy.

• 대한전자공학회논문지SD
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• 제41권8호
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• pp.1-8
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• 2004

두께가 3nm인 게이트 산화막을 사용한 n-MOSFET에 정전압 스트레스를 가하였을 때 관찰되는 SILC 및 soft breakdown 열화 및 이러한 열화가 소자 특성에 미치는 영향에 대해 실험하였다. 열화 현상은 인가되는 게이트 전압의 극성에 따라 그 특성이 다르게 나타났다. 게이트 전압이 (-)일 때 열화는 계면 및 산화막내 전하 결함에 의해 발생되었지만, 게이트 전압이 (＋)일 때는 열화는 주로 계면 결함에 의해 발생되었다. 또한 이러한 결함의 생성은 Si-H 결합의 파괴에 의해 발생할 수 있다는 것을 중수소 열처리 및 추가 수소 열처리 실험으로부터 발견하였다. OFF 전류 및 여러 가지 MOSFET의 전기적 특성의 변화는 관찰된 결함 전하(charge-trapping)의 생성과 직접적인 관련이 있다. 그러므로 실험 결과들로부터 게이트 산화막으로 터널링되는 전자나 정공에 의한 Si 및 O의 결합 파괴가 게이트 산화막 열화의 원인이 된다고 판단된다. 이러한 물리적 해석은 기존의 Anode-Hole Injection 모델과 Hydrogen-Released 모델의 내용을 모두 포함하게 된다.

• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.996-1000
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• 2005

Experimental results are presented for the degradation of 3 nm-thick gate oxide $(SiO_2)$ under both Negative-bias Temperature Instability (NBTI) and Hot-carrier-induced (HCI) stresses using P and NMOSFETS, The devices are annealed with hydrogen or deuterium gas at high-pressure $(1\~5\;atm.)$ to introduce higher concentration in the gate oxide. Both interface trap and oxide bulk trap are found to dominate the reliability of gate oxide during electrical stress. The degradation mechanism depends on the condition of electrical stress that could change the location of damage area in the gate oxide. It was found the trap generation in the gate oxide film is mainly related to the breakage of Si-H bonds in the interface or the bulk area. We suggest that deuterium bonds in $SiO_2$ film are effective in suppressing the generation of traps related to the energetic hot carriers.

• Journal of Welding and Joining
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• 제5권1호
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• pp.34-41
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• 1987

To explore the possible application of thermal analysis technique as a probe for finding weld defects, Hydrogen trapping phenomena in Heat Affected Zone (HAZ) of the AISI 5160 spring steel were investigated. HAZ was divided into five parts, which were used as thermal analysis specimens. Two types of trap sites were found in HAZ, ferrite/cementin interface and microvoid. The thermal analysis peak due to the ferrite/cementite interface increased its height toward the weld deposit. The thermal analysis peak due to the microvoid was the highest where the grain size was the smallest. The correspondence between the cold cracking and hydrogen trap nature is also discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권2호
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• pp.95-102
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• 2001

Hafnium oxide thin films for gate dielectric were deposited at $300^{\circ}C$ on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed in $O_2$ and $N_2$ ambient at various temperatures. The effect of hydrogen treatment in 4% $H_2$ at $350^{\circ}C$ for 30 min on the electrical properties of $HfO_2$for gate dielectric was investigated. The flat-band voltage shifts of $HfO_2$capacitors annealed in $O_2$ambient are larger than those in $N_2$ambient because samples annealed in high oxygen partial pressure produces the effective negative charges in films. The oxygen loss in $HfO_2$films was expected in forming gas annealed samples and decreased the excessive oxygen contents in films as-deposited and annealed in $O_2$ or $N_2$ambient. The CET of films after hydrogen forming gas anneal almost did not vary compared with that before hydrogen gas anneal. Hysteresis of $HfO_2$films abruptly decreased by hydrogen forming gas anneal because hysteresis in C-V characteristics depends on the bulk effect rather than $HfO_2$/Si interface. The lower trap densities of films annealed in $O_2$ambient than those in $N_2$were due to the composition of interfacial layer becoming closer to $SiO_2$with increasing oxygen partial pressure. Hydrogen forming gas anneal at $350^{\circ}C$ for samples annealed at various temperatures in $O_2$and $N_2$ambient plays critical role in decreasing interface trap densities at the Si/$SiO_2$ interface. However, effect of forming gas anneal was almost disappeared for samples annealed at high temperature (about $800^{\circ}C$) in $O_2$ or $N_2$ambient.

• 한국대기환경학회지
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• 제16권1호
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• pp.61-68
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• 2000

Gas-phase hydrogen peroxide(H2O2) concentrations were measured to investigate it's distribution in the ambient air in downtown Seoul(Kwanghwamum and Mullae-dong). These measurements were made during four season, from April 30, 1998 to January 29, 1999, using Cold Trap and HPLC. Measurements were also made of other photochemical oxidants and trace gases(O3, NO2, CO and SO2) and meteorological parameters(relative humidity, temperature, solar radiation and wind speed). The mean of all observations was 0.10 ppbv and the range measured was below the level of detection(>0.01 ppbv) to 0.47ppbv. The higher seasonal mean concentrations showed during the summer(0.21 ppbv) and concentrations of H2O2 showed a diurnal variation with maximum concentrations in the afternoon(12:30∼14:00). The results from the corrrelation analysis showed that the concentration of gaseous H2O2 is strongly dependent on the other air pollutants(NO2, CO and O3) and meteorological parameters(relative humidity, temperature and solar radiation.)