• 한국전기전자재료학회논문지
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• 제31권6호
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• pp.386-391
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• 2018

An epitaxial GaN layer was grown on a cone-shape-patterned sapphire substrate (PSS) (Sample A) and an AlN-buffered PSS (Sample B) with two growth steps under the same process conditions by employing the hydride vapor phase epitaxy (HVPE) method. We have investigated the characteristics of the GaN layer grown on two kinds of substrates at each growth step. The cross-sectional SEM image of the GaN layer grown on the two types of substrates showed growth states of GaN layers formed during the 1st and 2nd growth steps with different growth durations. Dislocation density was obtained by calculation using the FWHM value of the rocking curve for (002) and (102). Sample A showed 2.62+08E and 6.66+08E and sample B exhibited 5.74+07E and 1.65+08E for two different planes. The red shift was observed is photoluminescence (PL) analysis and Raman spectroscopy results. GaN layers grown on AlN-buffered PSS exhibited better optical and crystallographic properties than GaN layers grown on PSS.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.175-175
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• 2000

Si(100) surfaces were exposed to gas-phase thermal-energy hydrogen atoms, H(g). We find that thermal H(g) atoms etch, amorphize, or penetrate into the crystalline silicon substrate, depending on the employed Ts range during the H(g) exposure. We find that etching is enhanced as Ts is lowered in the 300-700K range, while amorphous silicon hydride (a-Si:H) formation dominates at a Ts below 300K. This result was well explained by the fact that formation of the etching precursor, SiHx(a), and amorphization are both facilitated by a lower Ts, whereas the final step for etching, SiH3(a) + H(g) longrightarrow SiH3(g), is suppressed at a lower Ts. we also find that direct absorption of H(g) by the crystalline bulk of Si(100) substrate occurs within a narrow Ts window of 420-530K. The bulk-absorbed hydrogen evolved out molecularly from Si(100) at a Ts 80-120K higher than that for surface monohydride phase ($\beta$1) in temperature-programmed desorption. This bulk-phase H uptake increased with increasing H(g) exposure without saturation within our experimental limits. Direct absorption of H(g) into the bulk lattice occurs only when the surface is atomically roughened by surface etching. While pre-adsorbed hydrogen atoms on the surface, H(a), were readily abstracted and replaced by D(g), the H atoms previously absorbed in the crystalline bulk were also nearly all depleted, albeit at a much lower rate, by a subsequent D(g) at the peak temperature in TPD from the substrate sequentially treated with H(g) and D(g), together with a gas phase-like H2 Raman frequency of 4160cm-1, will be presented.

• 한국재료학회지
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• 제15권11호
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• pp.735-740
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• 2005

The phase transformation of Ni-B diffusion barrier by Cu diffusion was studied. The Ni-B diffusion barrier, thickness of 10(Inn, was electrolessly deposited on the electroplated Cu interconnect. The specimens were annealed either in Ar atmosphere or in $H_2$ atmosphere from $300^{\circ}C\;to\;800^{\circ}C$ for 30min, respectively. Although the Ni-B coated specimens showed the decomposition of $Ni_3B$ above $400^{\circ}C$ in both Ar atmosphere and $H_2$ atmosphere, Ni-B powders did not show the decomposition of $Ni_3B$. The $Ni_3B$ was decomposed to Ni and B in hi atmospherr: and the metallic Ni formed the solid solution with Cu and the free B was oxidized to $B_2O_3$. However, both the boron hydride and free B were not observed in the diffusion barrier after the annealing in $H_2$ atmos There. These results revealed that the decomposition of $Ni_3B$ by Cu made the Cu diffusion continued toward the Ni-B diffusion barrier.

• 한국재료학회지
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• 제9권6호
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• pp.599-603
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• 1999

AIN과 저온 GaN 완충충율 이용하여 Si 기판 위의 후막 GaN의 성장특성을 조샤하였다. Si과 GaN의 격자부정합도와 열팽창계수의 차이를 줄이기 위해 AIN과 저온 GaN를 완충충으로 사용하였다. AIN은 RF sputter를 이용하여 중착온도와 증착시간 및 RF power에 따른 표면 거칠기를 AFM으로 조사하여 최척조건을 확립하여 사용하였다. 또한 저온에서 GaN를 성장시켜 이를 완충충으로 이용하여 후막 GaN의 성장시 미치는 영향을 살펴보았다. 성장온도와 V/III 비율이 후막 성장시 표면특성과 결정성 및 성장속도에 미치는 영향을 조사하였다. 후막 GaN의 표연특성 및 막의 두께는 SEM과 $\alpha-step$을 이용하여 측정하였으며 결정성은 X-ray Diffractometer를 이용하여 조사하였다.

• Bulletin of the Korean Chemical Society
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• 제14권1호
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• pp.137-143
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• 1993

The tetranuclear heterometallic complex CpMo$Os_3(CO)_{10}({\mu]-H)2[{\mu}3-{\eta}^2-C(O)CH_2Tol]\;(1,\;Cp={\eta}^5-C_5H_5,\;Tol=p-C_6H_4Me)$ has been examined by variable-temperature $^{13}$C-NMR spectroscopy and by a full three-dimensional X-ray structual analysis. Complex 1 crystallizes in the orthorhombic space group Pna2$_1$ with a = 12.960(1) ${\AA}$, b = 11.255(l) ${\AA}$, c = 38.569(10)${\AA}$, V = 5626(2) ${\AA}^3$ and ${\rho}$(calcd) = 2.71 gcm$^{-3}$ for Z = 8 and molecular weight 1146.9. Diffraction data were collectedon a CAD4 diffractometer, and the structure was refined to $R_F$ = 9.7% and $R_{W^F}$ = 9.9% for 2530 data (MoK${\alpha}$ radiation). There are two essentially equivalent molecules in the crystallographic asymmetric unit. The tetranuclear molecule contains a triangulated rhomboidal arrangement of metal atoms with Os(2) and Mo at the two bridgehead positions. The metal framework is planar; the dihedral angle between Os(l)-Os(2)-Mo and Os(3)-Os(2)-Mo planes is 180$^{\circ}$. A triply bridging (${\mu}_3,\;{\eta}^2$) acyl ligand lies above the Os(l)-Os(2)-Mo plane; the oxygen atom spans the two bridgehead positions, while the carbon atom spans one bridgehead position and an acute apical position. The molecular architecture is completed by an ${\eta}^5$-cyclopentadienyl ligand and a semi-triply bridging carbonyl ligand on the molybdenum atom, and nine terminal carbonyl ligands-four on Os(3), three on Os(l), and two on Os(2). The two hydride ligands are inferred to occupy the Os(l)-Os(2) and Mo-Os(3) edges from structural and NMR data.

• 대한금속재료학회지
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• 제50권1호
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• pp.64-70
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• 2012

Samples of pure Mg, 76.5 wt%Mg-23.5 wt%Ni, and 71.5 wt%Mg-23.5 wt%Ni-5 wt%$Fe_2O_3$ were prepared by reactive mechanical grinding and their hydriding and dehydriding properties were then investigated. The reactive mechanical grinding of Mg with Ni is considered to facilitate nucleation and to shorten diffusion distances of hydrogen atoms. After hydriding-dehydriding cycling, the 76.5 wt%Mg-23.5 wt%Ni and 71.5 wt%Mg-23.5 wt%Ni-5 wt%$Fe_2O_3$ samples contained $Mg_2Ni$ phase. In addition to the effects of the creation of defects and the decrease in particle size, the addition of Ni increases the hydriding and dehydriding rates by the formation of $Mg_2Ni$. Expansion and contraction of the hydride-forming materials (Mg and $Mg_2Ni$) with the hydriding and dehydriding reactions are also considered to increase the hydriding and dehydriding rates of the mixture by forming defects and cracks leading to the fragmentation of particles. The reactive mechanical grinding of Mg-Ni alloy with $Fe_2O_3$ is considered to decrease the particle size.

• 한국환경보건학회지
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• 제47권5호
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• pp.496-503
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• 2021

Background: Considering the expenses of and difficulties in arsenic speciation by high performance liquid chromatography-inductively coupled plasma-mass spectrometry (HPLC-ICP-MS), alternative measurement methods should be useful, especially for large-scale research and projects. Objectives: A measurement method was developed for arsenic speciation using HPLC-atomic fluorescence spectrometry (HPLC-AFS) as an alternative to HPLC-ICP-MS. Methods: Total arsenic and toxic arsenic species in some seafoods were determined by atomic absorption spectrometry coupled with hydride vapor generation (AAS-HVG) and HPLC-AFS, respectively. Recovery rate of arsenic species in seafood was evaluated by ultra sonication, microwave and enzyme (pepsin) for the optimal extraction method. Results: Limits of detection of HPLC-AFS for As³⁺, dimethylarsinate (DMA), monomethylarsonate (MMA) and As⁵⁺ were 0.39, 0.53, 0.60 and 0.64 ㎍/L, respectively. The average accuracy ranged from 97.5 to 108.7%, and the coefficient of variation was in the range of 1.2~16.7%. As³⁺, DMA, MMA and As⁵⁺ were detected in kelp, the sum of toxic arsenic in kelp was 40.4 mg/kg. As³⁺, DMA, MMA and As⁵⁺ were not detected in shrimp and squid, but total arsenic (iAS and oAS) content in shrimp and squid analyzed by AAS-HVG were 18.1 and 24.7 mg/kg, respectively. Conclusions: HPLC-AFS was recommendable for the quantitative analysis method of arsenic species. As toxic arsenic species are detected in seaweeds, further researches are needed for the contribution degree of seafood in arsenic exposure.

• 소성∙가공
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• 제28권1호
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• pp.21-26
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• 2019

Direct Laser Melting (DLM) of $Ti-xTiH_2$ (mixing ratio x = 2, 5, 10 wt.%) blended powder is characterized by producing porous titanium parts. When a high energy laser is irradiated on a $Ti-TiH_2$ blended powder, hydrogen gas ($H_2$) is produced by the accompanying decomposition of the $TiH_2$ powder, and acts as a pore-forming and activator. The hydrogen gas trapped in a rapidly solidified molten pool, which generates porosity in the deposited layer. In this study, the effects of a $TiH_2$ mixing ratio and the associated processing parameters on the development of a porous titanium were investigated. It was determined that as the content of $TiH_2$ increases, the resulting porosity density also increases, due to the increase of $H_2$ produced by $TiH_2$. Also, porosity increases as the scan speed increases. As fast solidified melting pools do not provide enough time for $H_2$ to escape, the faster the scan speed, the more the resulting $H_2$ is captured by the process. The results of this study show that the mixing ratio (x) and laser machining parameters can be adjusted to actively generate and control the porosity of the DLM parts.

• 대한금속재료학회지
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• 제56권12호
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• pp.878-884
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• 2018

In the present work, we selected a polymer, polyvinylidene fluoride (PVDF), as an additive to improve the hydrogenation and dehydrogenation properties of Mg. 95 wt% Mg + 5 wt% PVDF (designated Mg-5PVDF) samples were prepared via milling in hydrogen atmosphere (reactive milling), and the hydrogenation and dehydrogenation characteristics of the prepared samples were compared with those of Mg milled in hydrogen atmosphere. The dehydrogenation of magnesium hydride formed in the as-prepared Mg-5PVDF during reactive milling began at 681 K. In the fourth cycle (n=4), the initial hydrogenation rate was 0.75 wt% H/min and the quantity of hydrogen absorbed for 60 min, $H_a$ (60 min), was 3.57 wt% H at 573 K and in 12 bar $H_2$. It is believed that after reactive milling the PVDF became amorphous. The milling of Mg with the PVDF in hydrogen atmosphere is believed to have produced defects and cracks. The fabrication of defects is thought to ease nucleation. The fabrication of cracks is thought to expose fresh surfaces, resulting in an increase in the reactivity of the particles with hydrogen and a decrease in the diffusion distances of hydrogen atoms. As far as we know, this investigation is the first in which a polymer PVDF was added to Mg by reactive milling to improve the hydrogenation and dehydrogenation characteristics of Mg.

• 대한금속재료학회지
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• 제49권4호
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• pp.321-328
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• 2011

The 30 nm-thick Ni layers was deposited on a flexible polyimide substrate with an e-beam evaporation. Subsequently, we deposited a Si layer using a catalytic CVD (Cat-CVD) in a hydride amorphous silicon (${\alpha}$-Si:H) process of $T_{s}=180^{\circ}C$ with varying thicknesses of 55, 75, 145, and 220 nm. The sheet resistance, phase, degree of the crystallization, microstructure, composition, and surface roughness were measured by a four-point probe, HRXRD, micro-Raman spectroscopy, FE-SEM, TEM, AES, and SPM. We confirmed that our newly proposed Cat-CVD process simultaneously formed both NiSi and crystallized Si without additional annealing. The NiSi showed low sheet resistance of < $13{\Omega}$□, while carbon (C) diffused from the substrate led the resistance fluctuation with silicon deposition thickness. HRXRD and micro-Raman analysis also supported the existence of NiSi and crystallized (>66%) Si layers. TEM analysis showed uniform NiSi and silicon layers, and the thickness of the NiSi increased as Si deposition time increased. Based on the AES depth profiling, we confirmed that the carbon from the polyimide substrate diffused into the NiSi and Si layers during the Cat-CVD, which caused a pile-up of C at the interface. This carbon diffusion might lessen NiSi formation and increase the resistance of the NiSi.