• IEMEK Journal of Embedded Systems and Applications
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• v.13 no.3
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• pp.151-160
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• 2018

NAND flash memories have the advantages of fast access speed, high density and low power consumption, thus they have increasing demand in embedded system and mobile environment. Despite the low power and fast speed gains of NAND flash memory, DRAM disk buffers were used because of the performance load and limited durability of NAND flash cell. However, DRAM disk buffers are not suitable for limited energy environments due to their high static energy consumption. In this paper, we propose WAP-LRU (Write pattern Analysis based Placement by LRU) hybrid disk buffer management policy. Our policy designates the buffer location in the hybrid memory by analyzing write pattern of the workloads to check the continuity of the page operations. In our simulation, WAP-LRU increased the lifetime of NAND flash memory by reducing the number of garbage collections by 63.1% on average. In addition, energy consumption is reduced by an average of 53.4% compared to DRAM disk buffers.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1044-1046
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• 2009

Here we report the architecture for a non-volatile n-type memory paper field-effect transistor. The device is built using the hybrid integration of natural cellulose fibers (pine and eucalyptus fibers embedded in an ionic resin), which act simultaneously as substrate and gate dielectric, with amorphous GIZO and IZO oxides as gate and channel layers, respectively. This is complemented by the use of continuous patterned metal layers as source/drain electrodes.

• The KIPS Transactions:PartA
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• v.8A no.2
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• pp.107-116
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• 2001

A multithreaded model is a hybrid one which combines locality of execution of the von Neumann model with asynchronous data availability and implicit parallelism of the dataflow model. Much researches that have been made toward the advanced performance of multithreaded models are about the cache memory which have been proved to be efficient in the von Neumann model. To use an instruction cache or operand cache, the multithreaded models must have cache memories. If cache memories are added to the multithreaded model, they may have the disadvantage of high implementation cost in the mode. To solve these problems, we did not add cache memory but applied the method of executing the caching by using available registers of the multithreaded models. The available register-based caching method is one that use the registers which are not used on the execution of threads. It may accomplish the same effect as the cache memory. The multithreaded models can compute the number of available registers to be used during the process of the register optimization, and therefore this method can be easily applied on the models. By applying this method, we can also remove the access conflict and the bottleneck of frame memories. When we applied the proposed available register-based caching method, we found that there was an improved performance of the multithreaded model. Also, when the available-register-based caching method is compared with the cache based caching method, we found that there was the almost same execution overhead.

• Journal of the Korean Magnetics Society
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• v.22 no.5
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• pp.162-166
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• 2012

V-I characteristics of Fe(100)/MgO(100)/Cu-phthalocyanine (CuPc)/Co hybrid magnetic tunnel junctions were investigated at different temperatures. Fe(100) and Co ferromagnetic layers were separated by an organic-inorganic hybrid barrier consisting of different thickness of CuPc thin film grown on a 2 nm thick epitaxial MgO(100) layer. As the CuPc thickness increases from 0 to 10 nm, a bistable switching behavior due to strong charging effects was observed, while a very large magenetoresistance was shown at 77 K for the junctions without the CuPc barrier. This switching behavior decreases with the increase in temperature, and finally disappears beyond 240 K. In this work, high-potential future applications of the MgO(100)/CuPc bilayer were discussed for hybrid spintronic devices as well as polymer random access memories (PoRAMs).

• Journal of KIISE:Computing Practices and Letters
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• v.16 no.7
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• pp.789-793
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• 2010

Recently, flash memory-based non-volatile cache (NVC) is emerging as an effective solution to enhance both I/O performance and energy consumption of storage systems. To get significant performance and energy gains by NVC, it would be better to use multi-level-cell (MLC) flash memories since it can provide a large capacity of NVC with low cost. However, the number of available program/erase cycles of MLC flash memory is smaller than that of single-level-cell (SLC) flash memory limiting the lifespan of NVC. To overcome such a limitation, SLC/MLC combined flash memory is a promising solution for NVC. In this paper, we propose an effective management scheme for heterogeneous SLC and MLC regions of the combined flash memory.

• Journal of KIISE
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• v.42 no.3
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• pp.379-389
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• 2015

With the advent of non-volatile memories such as Phase Change Memory (PCM or PRAM) and Magneto Resistive RAM (MRAM), active studies have been carried out on how to replace Dynamic Random-Access Memory (DRAM) with PRAM. In this paper, we study both endurance and performance issues of existing join algorithms that are based on PRAM-based computer systems and have been widely used until now: Block Nested Loop Join, Sort-Merge Join, Grace Hash Join, and Hybrid Hash Join. Our experimental results show that the existing join algorithms need to be redesigned to improve both the endurance and performance of PRAMs. To the best of our knowledge, this is the first research to scientifically study the results of the four join algorithms running on PRAM-based systems. In this work, our main contribution is the modeling and implementation of a PRAM-based simulator for a comparative study of the existing join algorithms.

• Journal of KIISE
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• v.42 no.2
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• pp.183-189
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• 2015

Recently, computer systems have encountered difficulties in making further progress due to the technical limitations of DRAM based main memory technologies. This has motivated the development of next generation memory technologies that have high density and non-volatility. However, these new memory technologies also have their own intrinsic limitations, making it difficult for them to currently be used as main memory. In order to overcome these problems, we propose a hybrid main memory system, namely HyMN, which utilizes the merits of next generation memory technologies by combining two types of memory: Write-Affable RAM(WAM) and Read-Affable RAM(ReAM). In so doing, we analyze the appropriate WAM size for HyMN, at which we can avoid the performance degradation. Further, we show that the execution time performance of HyMN, which provides an additional benefit of durability against unexpected blackouts, is almost comparable to legacy DRAM systems under normal operations.

• Journal of KIISE:Computer Systems and Theory
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• v.37 no.4
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• pp.215-225
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• 2010

The NAND flash memory based SSDs are considered to replace the existing HDDs. To maximize the I/O performance, SSD is composed of several NAND flash memories in parallel. However, to adopt the hybrid mapping scheme in SSD may cause degradation of the I/O performance. In this paper, we propose a new mapping scheme for the SSD called WADPM. WADPM loads only necessary mapping information into RAM and dynamically adjusts the size of mapping information in the RAM. So, WADPM avoids the shortcoming of page-level mapping scheme that requires too large mapping table. Performance evaluation using simulations shows that I/O performance of WADPM is 3.5 times better than the hybrid-mapping scheme and maximum size of mapping table of WADPM is about 50% in comparison with the page-level mapping scheme.

• Journal of Information Display
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• v.10 no.4
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• pp.149-157
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• 2009

Reported herein is the architecture for a nonvolatile n-type memory paper field-effect transistor. The device was built via the hybrid integration of natural cellulose fibers (pine and eucalyptus fibers embedded in resin with ionic additives), which act simultaneously as substrate and gate dielectric, using passive and active semiconductors, respectively, as well as amorphous indium zinc and gallium indium zinc oxides for the gate electrode and channel layer, respectively. This was complemented by the use of continuous patterned metal layers as source/drain electrodes.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.12
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• pp.4997-5006
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• 2010

A flash-memory-based SSDs(Solid State Disks) are one of the best media to support portable and desktop computers' storage devices. Their features include non-volatility, low power consumption, and fast access time for read operations, which are sufficient to present flash memories as major database storage components for desktop and server computers. However, we need to improve traditional storage management schemes based on HDD(Hard Disk Drive) and RAID(Redundant array of independent disks) due to the relatively slow or freezing characteristics of write operations of SSDs, as compared to fast read operations. In order to achieve this goal, we propose a new storage management scheme called Hetero-Mirroring based on traditional HDD mirroring scheme. Hetero-Mirroring-based scheme improves RAID-1 operation performance by balancing write-workloads and delaying write operations to avoid SSD freezing. Our test results show that our scheme significantly reduces the write operation overheads and freezing overheads, and improves the performance of traditional SSD-RAID-1 scheme by 18 percent, and the response time of the scheme by 38 percent.