Journal of Information Display

The Korean Infomation Display Society (한국정보디스플레이학회)
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Self-sustained n-Type Memory Transistor Devices Based on Natural Cellulose Paper Fibers

  • Martins, Rodrigo (CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa, and CEMOP-UNINOVA) ;
  • Pereira, Luis (CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa, and CEMOP-UNINOVA) ;
  • Barquinha, Pedro (CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa, and CEMOP-UNINOVA) ;
  • Correia, Nuno (CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa, and CEMOP-UNINOVA) ;
  • Goncalves, Goncalo (CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa, and CEMOP-UNINOVA) ;
  • Ferreira, Isabel (CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa, and CEMOP-UNINOVA) ;
  • Dias, Carlos (CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa, and CEMOP-UNINOVA) ;
  • Correia, N. (CQFB/REQUINTE, Departamento de Quimica, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa) ;
  • Dionisio, M. (CQFB/REQUINTE, Departamento de Quimica, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa) ;
  • Silva, M. (Departamento de Quimica, Universidade do Minho, Campus de Gualtar) ;
  • Fortunato, Elvira (CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa, and CEMOP-UNINOVA)
  • Published : 2009.12.31
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Abstract

Reported herein is the architecture for a nonvolatile n-type memory paper field-effect transistor. The device was built via the hybrid integration of natural cellulose fibers (pine and eucalyptus fibers embedded in resin with ionic additives), which act simultaneously as substrate and gate dielectric, using passive and active semiconductors, respectively, as well as amorphous indium zinc and gallium indium zinc oxides for the gate electrode and channel layer, respectively. This was complemented by the use of continuous patterned metal layers as source/drain electrodes.

Keywords

References

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