• 한국초전도ㆍ저온공학회논문지
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• 제15권2호
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• pp.9-11
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• 2013

We have investigated the effect of thickness of the MgB2 film on the grain growth direction as well as on their superconducting properties. $MgB_2$ films of various thicknesses were fabricated on c-cut $Al_2O_3$ substrates at a temperature of $540^{\circ}C$ by using hybrid physical-chemical vapor deposition (HPCVD) technique. The superconducting transition temperature ($T_c$) was found to increase with increase in the thickness of the $MgB_2$ film. X-ray diffraction analysis revealed that the orientation of grains changed from c-axis to a-axis upon increasing the thickness of the $MgB_2$ film from 0.6 to 2.0 ${\mu}m$. $MgB_2$ grains of various orientations were observed in the microstructures of the films examined by scanning electron microscopy. It is observed that at high magnetic fields the 2.0-${\mu}m$-thick film exhibit considerably larger critical current density ($J_c$) as compared to 0.6-${\mu}m$-thick film. The results are discussed in terms of an intrinsic-pinning in $MgB_2$ similarly as intrinsic-pinning occurring in high-Tc cuprate superconductors with layered structure.

• 한국표면공학회지
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• 제44권3호
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• pp.95-104
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• 2011

Ti based nanocomposite films including V, Si and Nb (Ti-Me-N, Me=V, Si and Nb) were fabricated by hybrid physical vapor deposition (PVD) method consisting of unbalanced magnetron (UBM) sputtering and arc ion plating (AIP). The pure Ti target was used for arc ion plating and other metal targets (V, Si and Nb) were used for sputtering process at a gas mixture of Ar/$N_2$ atmosphere. Mostly all of the films were grown with textured TiN (111) plane except the Si doped Ti-Si-N film which has strong (200) peak. The microhardness of each film was measured using the nanoindentation method. The minimum value of removal rate ($0.5{\times}10^{-15}\;m^2/N$) was found at Nb doped Ti-Nb-N film which was composed of Ti-N and Nb-N nanoparticles with small amount of amorphous phases.

• 한국재료학회지
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• 제17권4호
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• pp.185-191
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• 2007

The purpose of this study is to evaluate the thin fihn dielectric made of hybrid sol, which consist of barium titanate powder, polymeric sol and other polymers. This sol will be used dielectric applied to small, thin electric passive components such as MLCC(Multi Layer Ceramic Condenser), resister, inductor. This sol is composed of mixed fine barium titanate powder and polymeric sol including Ba, Ti-precursor, solvent, chelating agent, chemical reaction catalyst, the additive sols to improve fired densification and temperature reliability. First at all, we mixed hybrid sol to be dispersed and be stabilized by ball milling for 24hrs. By spin coating method, we makes thin film dielectric on the convectional green sheet for MLCC. After heat treatments, we analyzes the structure morphology, physical, electrical properties and X5R Temperature properties.

• 대한전자공학회논문지SD
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• 제43권6호
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• pp.18-22
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• 2006

묽은 n-octadecyltrichlorosilane를 여러 가지 비율로 섞어 만든 유기물에 따라 처리된 $SiO_2$ 절연막의 특성에 대하여 분석하고 펜타센 증착 표면에 생긴 그레인 크기 사이의 상관관계를 조사하였다. 전압-전류 특성 곡선에 의한 누설전류의 증가량이 유기물 처리 농도에 따라 비례적으로 증가하지 않았으며, 0.3 % 처리 농도에서 누설전류가 가장 작게 나타났다. 0.3 % 처리 농도의 $SiO_2$ 절연막은 유무기 복합적인 하이브리드 특성을 나타내고 있으며, 펜타센이 증착된 후 표면 사진에서 그레인 크기가 가장 작게 성장된 것을 확인하였다. 반면에 유기물 특성의 절연막 혹은 무기물 특성의 절연막 위에서 펜타신 물질이 증착후 그레인 크기는 점점 증가하였다.

• 한국자기학회지
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• 제21권5호
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• pp.185-192
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• 2011

박막제조 기술은 과학 기술의 기초가 되는 분야로 양질의 박막을 제조하기 위한 다양한 노력이 경주되고 있다. 박막제조는 표면개질과 함께 표면처리 기술의 한 분야이며 이중 진공증착으로 알려진 물리증착법과 화학증착법은 현대의 과학기술 연구는 물론 산업적으로 폭넓게 이용되는 박막제조 기술 중의 하나이다. 진공증착을 이용한 박막제조 기술은 나노 기술의 등장과 함께 비약적인 발전을 이루었으며 자연모사와 완전화 박막의 제조, 융복합 공정을 이용한 기능성 코팅과 Engineered Structure 구현 그리고 초고속 증착과 원가 저감 기술의 실현이 주요 이슈로 등장하고 있다. 본 논문에서는 물리증착법과 화학증착법을 중심으로 박막제조 기술의 종류와 원리를 설명하고 박막제조 기술의 최신 동향과 기술적 이슈 및 향후 전망에 대해 기술한다.

• 한국위성정보통신학회논문지
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• 제3권1호
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• pp.1-7
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• 2008

본 논문에서는 통신위성시스템 탑재를 위한 Ku-Band 선형화 채널증폭기 비행모델의 설계와 제작된 결과를 고찰하였다. 정착된 모든 서브모듈, 즉 가변이득증폭기, 가변전압감쇠기, 그리고 전치왜곡 보상회로를 위한 브랜치 라인 결합기와 검출기는 Thin-Film Hybrid 작업으로 제작되었다. 제작된 모듈의 성능은 초고주파 회로분석 시뮬레이션 툴과 우주환경에서의 전기적인 성능시험을 통하여 검증하였다.

• 한국응용과학기술학회지
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• 제28권2호
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• pp.240-246
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• 2011

UV-Curable hybrid coatings were synthesized to improve the surface properties of plastic film. Organic-inorganic coating solutions were prepared by the sol-gel method using urethane-acrylate oligomer, acrylate monomer, photo initiator and tetraethoxysilane (TEOS). Methacryloyloxypropyltrimethoxysilane(MPTMS) was used as a silane coupling agent to improve chemical interaction between inorganic phases and UV curable acrylate. In this study, the surface hardness and adhesive properties were improved with the use of inorganic component. The experimental results showed that UV-Curable hybrid films containing aliphatic urethane oligomer, hexanedioldiacrylate, trimethylolpropanetriacrylate, hydroxy dimethyl acetophenone exhibited good surface properties. Also, the optimum curing conditions were investigated.

• Macromolecular Research
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• 제12권1호
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• pp.38-45
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• 2004

A highly flexible polyimide (PI) was synthesized successfully from ethylene glycol bis(anhydrotrimellitate) (TMEG) and 1,3-bis(4-aminophenoxy)benzene (TPER) for its application in electronics. To enhance the thermal stability and mechanical properties of this novel PI, we prepared PI nanocomposite films using nanoparticles of clays that had been treated with organic intercalating agents (organoclays). We used two types of organoclays: montmo-rillonite (MMT) treated with hexadecylamine (C$\_$16/) and MMT treated with dimethyl dihydrogenated tallow quaternary ammonium (l5A). PI/organoclay hybrid films were obtained by first preparing poly(amic acid) (PAA)/organoclay films and then converting the PAA to polyimide by thermal conversion. PAA was characterized by FT-IR and $^1$H-NMR spectroscopy and the conversion of PAA to PI was confirmed by FT-IR spectroscopy. We analyzed the dispersion of the organoclays in the PI film by X-ray diffraction. The thermal stability and mechanical properties of the hybrid films were also investigated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.75.1-75.1
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• 2013

Atomic layer deposition (ALD) and molecular layer deposition (MLD) are based on sequential, self-limiting surface reactions that produce atomic layer controlled and conformal thin film growth. ALD can deposit inorganic films and MLD can deposit films containing organics. ALD and MLD can be used together to fabricate a wide range of hybrid organic-inorganic alloy films. The relative fraction of inorganic and organic constituents can be defined by controlling the ratio of the ALD and MLD reaction cycles used to grow the film. These hybrid films can be tuned to obtain desirable mechanical, electrical and optical properties. This talk will focus on the growth and properties of metal alkoxide films grown using metal precursors and various organic alcohols that are known as "metalcones". The talk will highlight the tunable mechanical properties of alucone alloys grown using Al2O3 ALD and alucone MLD and the tunable electrical conductivity of zincone alloys grown using ZnO ALD and zincone MLD with DEZ and hydroquinone as the reactants.

• Advances in nano research
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• 제2권1호
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• pp.23-56
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• 2014

The significant growth of the Si photovoltaic industry has been so far limited due to the high cost of the Si photovoltaic system. In this regard, the most expensive factors are the intrinsic cost of silicon material and the Si solar cell fabrication processes. Conventional Si solar cells have p-n junctions inside for an efficient extraction of light-generated charge carriers. However, the p-n junction is normally formed through very expensive processes requiring very high temperature (${\sim}1000^{\circ}C$). Therefore, several systems are currently under study to form heterojunctions at low temperatures. Among them, carbon nanotube (CNT)/Si hybrid solar cells are very promising, with power conversion efficiency up to 15%. In these cells, the p-type Si layer is replaced by a semitransparent CNT film deposited at room temperature on the n-doped Si wafer, thus giving rise to an overall reduction of the total Si thickness and to the fabrication of a device with cheaper methods at low temperatures. In particular, the CNT film coating the Si wafer acts as a conductive electrode for charge carrier collection and establishes a built-in voltage for separating photocarriers. Moreover, due to the CNT film optical semitransparency, most of the incoming light is absorbed in Si; thus the efficiency of the CNT/Si device is in principle comparable to that of a conventional Si one. In this paper an overview of several factors at the basis of this device operation and of the suggested improvements to its architecture is given. In addition, still open physical/technological issues are also addressed.