• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.384-390
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• 2001

The hollow cathode discharge is a kind of plasma formation scheme in which plasma is formed inside a hollow structure, the cathode, with current to a nearby anode of arbitrary shape. In this scheme, electrons reflex radially within the hollow cathode, establishing an efficient ionization mechanism for gas within the cavity. An existence condition for the hollow cathode effect is that the electron mean-free-path for ionization is of the order of the cavity radius. Thus the size of this kind of plasma source must decrease as the gas pressure is increased. In fact, the hollow cathode effect can occur even at atmospheric pressure for cathode diameters of order 10-100 $\mu\textrm{m}$. That is, the "natural" operating pressure regime for a "micro hollow cathode discharge" is atmospheric pressure. This kind of plasma source has been the subject of increasing research activity in recent years. A number of geometric variants have been explored, and operational requirements and typical plasma parameters have been determined. Large arrays of individual tiny sources can be used to form large-area, atmospheric-pressure plasma sources. The simplicity of the method and the capability of operation without the need for the usual vacuum system and its associated limitations, provide a highly attractive option for new approaches to many different kinds of plasma applications, including plasma surface modification technologies. Here we review the background work that has been carried out in this new research field.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.2
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• pp.62-66
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• 2004

This paper investigated the characteristics of a newly developed high density hollow cathode plasma (HCP) system and its application for the etching of silicon wafers. We used SF$_{6}$ and $O_2$ gases in the HCP dry etch process. Silicon etch rate of $0.5\mu\textrm{m}$/min was achieved with $SF_6$$O_2$plasma conditions having a total gas pressure of 50mTorr, and RF power of 100 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. The results of this experiment can be used for various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications.s.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.1
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• pp.78-81
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• 2008

A hollow cathode which has extremely stable discharge characteristic has been developed. This is composed of the two separated lanthanum hexaboride(LaB6) of a disk type in the tube as the electron emitters. The way of design is of great advantage to extend the surface discharge area of the LaB6, which is also useful for optimal fixing of the LaB6. The hollow cathode is capable of producing 30 kW(100 V, 300 A) of power continuously. Because the generated plasma beam with the high temperature(above $3000^{\circ}C$) from the hollow cathode passes through the center hole of the two intermediate electrodes, it is designed with the high temperature material of the tungsten and the suitable structure of the water cooling. The combinations of the hollow cathode and the two intermediate electrodes are practically useful for the ion plating plasma beam source.

• Journal of Information Display
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• v.2 no.4
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• pp.1-7
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• 2001

This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.381-385
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• 2005

The plasma temperature of Ar gas in hollow cathode discharge were measured. This is done by measuring the line profile of the 1s/sub 8/-2p/sub 8/ transition in Ar, using a single-frequency diode laser. Low power diode lasers have been successfully used for investigation of the line profiles of Ar transitions in hollow cathode discharges. It turns out that the plasma temperature of Ar is 640∼783 K in the discharge current range at 7∼10 mA.

• Korean Journal of Materials Research
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• v.15 no.8
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• pp.521-527
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• 2005

Surface modification of polypropylene hollow fiber membranes was peformed in order to develop blood-compatible biomaterials for use in the blood contacting and oxygenation membranes of a lung-assist device(LAD). Blood compatibility was determined by using anticoagulation blood and evaluating formation of blood clots on their surfaces as well as activation of plasma coagulation cascade, platelet adhesion, and aggregation. It was verified that the number of platelets on the silicone coated fibers was significantly lower than those on polypropylene. It was also found that the polypropylene hollow fiber membranes using plasma treatment exhibited suppression of complement activation in blood compatibility test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.488-491
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• 2002

We report the observation of line shapes in the optogalvanic spectrum, which are different from those of absorption, for transitions origination from the $3P_2$ ($1s_5$ in Paschen notation) metastable level of argon. The OG line shapes resemble those of absorption and be used to diagnose the characteristics of the discharge plasma. The measured plasma temperatures of Ar hollow cathode discharge for several metal cathodes are about 620~780K at discharge current of 7~10mA.

• Membrane Journal
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• v.15 no.3
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• pp.233-240
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• 2005

Surface modification of polypropylene hollow fiber membranes was performed in order to develop blood-compatibility biomaterials for use in the blood contacting surfaces and oxygenation membranes of a lung assist device (LAD), important medical device even more useful. Blood compatibility of materials was determined by using anticoagulation blood and evaluating formation of blood clots on their surfaces as well as activation of plasma coagulation cascade, platelet adhesion, and aggregation. It was verified that the number of platelets on the silicone coated fibers was significantly lower than that on untreated fiber membrane, indicating improved blood compatibility. It was also found that the polypropylene hollow fiber membranes using plasma treatment exhibited suppression of complement activation in blood compatibility test.

• Journal of the Korean Society for Heat Treatment
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• v.25 no.2
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• pp.80-84
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• 2012

An apparatus was constructed to nitrify small metallic sintered components by using a hollow-cathode discharge plasma method. A stainless steel basket, which contains a sintered part to be nitrified, is potentially grounded and serves as hollow-cathode electrode. Hollow-cathode plasma was produced by supplying the positive voltage to the anode. In this study sintered carbon iron and stainless steel were used as testing specimens. It was shown that an effective nitrifying took place by controlling the total pressure of nitrogen and hydrogen gas and applied voltage.

• Applied Chemistry for Engineering
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• v.18 no.5
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• pp.438-443
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• 2007

Titanium oxide films were deposited by the HCP (hollow cathode plasma) reactor at room temperature. With results of simulation about HCP reactor, the temperature profile is uniform on substrate regardless of the heat generation at cathode. The velocity profile on the surface of substrate is more uniform with increasing the gap between cathode and substrate, and surface roughness was decreased with increasing the gap between cathode and substrate. We could confirm that the composition of oxide increased with RF-power, and the ratio of O to Ti in the films was about 2 : 1 at RF-power of 240 watt and distance between cathode and substrate of 3 cm.