• 센서학회지
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• 제22권2호
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• pp.130-135
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• 2013

This study proposed a noble process to fabricate TSV (Through Silicon Via) structure which has lower cost, shorter production time, and more simple fabrication process than plating method. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process. The via hole was $100{\mu}m$ in diameter and $400{\mu}m$ in depth. A dielectric layer of $SiO_2$ was formed by thermal oxidation on the front side wafer and via hole side wall. An adhesion layer of Ti and a seed layer of Au were deposited. Soldering process was applied to fill the via holes with solder paste and metal powder. When the solder paste was used as via hole metal line, sintering state and electrical properties were excellent. However, electrical connection was poor due to occurrence of many voids. In the case of metal powder, voids were reduced but sintering state and electrical properties were bad. We tried the via hole filling process by using mixing solder paste and metal powder. As a consequence, it was confirmed that mixing rate of solder paste (4) : metal powder (3) was excellent electrical characteristics.

• 정보처리학회논문지B
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• 제17B권2호
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• pp.115-124
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• 2010

최근 스테레오 정합 기술은 정합하고자 하는 픽셀을 포함한 국부적인(local) 영상의 정합 비용과 시차의 변화 비용을 누적하는 전역적(global)인 방법을 많이 사용하고 있다. 특히 전역적 스테레오 정합에서도 비용누적 (cost accumulation)의 방향을 일반적인 수평방향이 아닌 다수의 방향을 사용하는 연구가 늘고 있다. 본 논문에서는 기존의 스테레오 정합 기술을 다중 방향성 정합 기술로 확장하는 방법을 제안한다. 픽셀의 국부적인 정합 비용은 단순한 NCC (Normalized Cross Correlation)를 사용하였고 전역적 정합 기술의 하나인 정합선 최적화(Scan-line Optimization) 방법을 다중 방향으로 확장하는 기술을 제안하였다. 우선 정합선 최적화를 다중 방향으로 실행한 후 이들 결과를 이용하여 신뢰도가 높은 시차영상 (disparity image)을 획득한다. 반복적인 다중 방향 정합선 최적화 시행 후, 시차영상에서 남은 공백은 홀 복원 방법으로 계산한다. 시차가 구해진 픽셀에 대해서는 신뢰도 점수를 매긴 다음 이 점수를 확산하여 신뢰도 점수 테이블에서 가장 높은 값을 가지는 시차값으로 홀을 복원하였다. 제안하는 기술을 미들버리(Middlebury)의 스테레오 영상을 사용하여 오차를 분석하였다. 기존의 전역적 방법과 제안 기술을 이용하여 시차영상을 계산하고 그 오차를 비교하였다.

• Journal of Welding and Joining
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• 제24권2호
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• pp.64-70
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• 2006

The 3-dimensional (3D) chip stacking technology is a leading technology to realize a high density and high performance system in package (SiP). There are several kinds of methods for chip stacking, but the stacking and interconnection through Cu filled through-hole via is considered to be one of the most advanced stacking technologies. Therefore, we studied the optimum process of through-hole via formation and Cu filling process for Si wafer stacking. Through-hole via was formed with DRIE (Deep Reactive ion Etching) and Cu filling was realized with the electroplating method. The optimized conditions for the via formation were RE coil power of 200 W, etch/passivation cycle time of 6.5 : 6 s and SF6 : C4F8 gas flow rate of 260 : 100 sccm. The reverse pulsed current of 1.5 A/dm2 was the most favorable condition for the Cu electroplating in the via. The Cu filled Si wafer was chemically and mechanically polished (CMP) for the following flip chip bumping technology.

• 전기전자학회논문지
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• 제20권1호
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• pp.31-44
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• 2016

본 논문에서는 자유 시점 텔레비전에서 시점 합성 영상 획득을 위해 시공간적 배경 정보 추정 기반 홀 채움 방식을 제안한다. 신뢰할 수 있는 시간적 배경 정보를 획득하기 위해 새로운 배경 코드북의 구성 및 갱신하는 과정을 수행한다. 더불어, 공간적인 국부 배경 정보 추정을 위해 홀 영역의 배경 및 전경 영역의 구별 및 갱신 과정을 수행한다. 추정된 시공간 배경 정보를 조합하여 홀 채움 과정을 수행하고, 잔여 홀 채움을 수행하기 위해 깊이 배경 정보를 이용한 우선순위 함수를 결정하여 표본 기반 인페인팅 기법을 적용한다. 실험 결과를 통해 제안 방식은 기존방식들과 비교하여 평균 0.3~0.6dB의 성능 향상이 있음을 확인하였으며, 동영상 특성 및 홀 형태에 관계없이 제안된 방식이 새로운 시점 영상을 효과적으로 합성할 수 있음을 확인할 수 있었다.

• Journal of Radiation Protection and Research
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• 제47권3호
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• pp.134-142
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• 2022

Background: This study investigated the characteristics of optically stimulated luminescence dosimeters (OSLDs) with fully filled deep electron/hole traps in the kV energy ranges. Materials and Methods: The experimental group consisted of InLight nanoDots, whose deep electron/hole traps were fully filled with 5 kGy pre-irradiation (OSLD_exp), whereas the non-pre-irradiated OSLDs were arranged as a control group (OSLD_cont). Absorbed doses for 75, 80, 85, 90, 95, 100, and 105 kVp with 200 mA and 40 ms were measured and defined as the unit doses for each energy value. A bleaching device equipped with a 520-nm long-pass filter was used, and the strong beam mode was used to read out signal counts. The characteristics were investigated in terms of fading, dose sensitivities according to the accumulated doses, and dose linearity. Results and Discussion: In OSLD_exp, the average normalized counts (sensitivities) were 12.7%, 14.0%, 15.0%, 10.2%, 18.0%, 17.9%, and 17.3% higher compared with those in OSLD_cont for 75, 80, 90, 95, 100, and 105 kVp, respectively. The dose accumulation and bleaching time did not significantly alter the sensitivity, regardless of the filling of deep traps for all radiation qualities. Both OSLD_exp and OSLD_cont exhibited good linearity, by showing coefficients determination (R²) > 0.99. The OSL sensitivities can be increased by filling of deep electron/hole traps in the energy ranges between 75 and 105 kVp, and they exhibited no significant variations according to the bleaching time.

• 한국정밀공학회지
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• 제23권9호
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• pp.190-199
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• 2006

A new approach which combines implicit surface scheme and recursive subdivision method is suggested in order to fill the holes with complex shapes in the polygon model. In the method, a base surface is constructed by creating smooth implicit surface from the points selected in the neighborhood of holes. In order to assure C$^1$ continuity between the newly generated surface and the original polygon model, offset points of same number as the selected points are used as the augmented constraint conditions in the calculation of implicit surface. In this paper the well-known recursive subdivision method is used in order to generate the triangular net with good quality using the hole boundary curve and generated base implicit surface. An efficient anisotropic smoothing algorithm is introduced to eliminate the unwanted noise data and improve the quality of polygon model. The effectiveness and validity of the proposed method are demonstrated by performing numerical experiments for the various types of holes and polygon model.

• 마이크로전자및패키징학회지
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• 제13권1호통권38호
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• pp.43-49
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• 2006

새로운 잔류 기공 추출 공정을 적용하여 Blind via hole(BVH)의 형상에 따라 발생되는 잔류기공 특성, 거동 및 신뢰성평가를 수행하였다. 잔류 기공 추출 공정을 적용한 시편에서는 잔류기공이 완전히 제거 되었으며, 기존 공정으로 제조된 시편에 비하여 40% 수준의 향상된 결과를 나타내었다. BVH의 형상에 관계없이 1.5기압수준으로 약 30초 이상 동안 추출하면 BVH내부의 잔류기공은 제거 되어지며 JEDEC 기준의 신뢰성으로 평가한 결과 BVH내부에 잔류기공은 존재하지 않았다.

• 한국표면공학회지
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• 제25권4호
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• pp.189-206
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• 1992

The effect of activation and electroless nickel plating conditions on contact properties was investi-gated for selective electroless nickel plating of Si wafers in order to obtain an optimum condition of con-tact hole filling. According to RCA prosess, p-type silicon (100) surface was cleaned out and activated. The effects of temperature, DMAB concentration, time, and strirring were investigated for activation of p-type Si(100) surface. The optimal activation condition was 0.2M HF, 1mM PdCl2, 2mM EDTA,$ 70^{\circ}C$, and 90sec under ultrasonic vibration. In electroless nickel plating, the effect of temperature, DMAB concentra-tion, pH, and plating time were studied. The optimal plating condition found was 0.10M NiSO4.H2O, 0.11M Citrate, pH 6.8, $60^{\circ}C$, 30minutes. The contact resistance of films was comparatively low. It took 30minutes to obtain 1$\mu\textrm{m}$ thick film with 8mM DMAB concentration. The film surface roughness was improved with decreasing temperature and decreasing pH of the plating solution. The best quality of the film was obtained at the condition of temperature $60^{\circ}C$ and pH 6.0. The micro-vickers hardness of film was about 800Hv. Plating rate of nickel on the hole pattern was slower than that of nickel on the line pattern.

• Journal of Electrical Engineering and Technology
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• 제11권4호
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• pp.1003-1011
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• 2016

In this paper, a new algorithm by using 3D warping technique to effectively fill holes that are produced when creating a virtual-viewpoint image is proposed. A hole is defined as the region that cannot be seen in the reference view when a virtual view is created. In the proposed algorithm, to reduce the blurring effect that occurs on the hole region filled by conventional algorithms and to enhance the texture quality of the generated virtual view, Exemplar Based In-painting algorithm is used. The boundary noise which occurs in the initial virtual view obtained by 3D warping is also removed. After 3D warping, we estimate the relative location of the background to the holes and then pixels adjacent to the background are filled in priority to get better result by not using only adjacent object's information. Also, the temporal inconsistency between frames can be reduced by expanding the search region up to the previous frame when searching for most similar patch. The superiority of the proposed algorithm compared to the existing algorithms can be shown through the experimental results.

• Journal of Electrochemical Science and Technology
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• 제11권1호
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• pp.60-67
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• 2020

In this study, copper (II) oxide powder for electroplating was prepared by recovering CuCl₂ from NaClO₃ type etching wastes via recovered non-sintering two step chemical reaction. In case of alkali copper carbonate [mCuCo₃·nCu(OH)₂], first reaction product, CuCo₃ is produced more than Cu(OH)₂ when the reaction molar ratio of sodium carbonate is low, since m is larger than n. As the reaction molar ratio of sodium carbonate increased, m is larger than n and Cu(OH)₂ was produced more than CuCO₃. In the case of m has same values as n, the optimum reaction mole ratio was 1.44 at the reaction temperature of 80℃ based on the theoretical copper content of 57.5 wt. %. The optimum amount of sodium hydroxide was 120 g at 80℃ for production of copper (II) oxide prepared by using basic copper carbonate product of first reaction. At this time, the yield of copper (II) oxide was 96.6 wt.%. Also, the chloride ion concentration was 9.7 mg/L. The properties of produced copper (II) oxide such as mean particle size, dissolution time for sulfuric acid, and repose angle were 19.5 mm, 64 second, and 34.8°, respectively. As a result of the hole filling test, it was found that the copper oxide (II) prepared with 120 g of sodium hydroxide, the optimum amount of basic hydroxide for copper carbonate, has a hole filling of 11.0 mm, which satisfies the general hole filling management range of 15 mm or less.