• Journal of the Korean Society for Heat Treatment
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• v.17 no.5
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• pp.283-292
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• 2004

The effects of the annealing parameters on microstructures were examined in a cold-rolled high strength steel containing 0.1% C, 0.5% Si, 1.5% Mn, and 0.04% Nb. It was impossible to avoid martensite in the microstructure even though the continuous annealing parameters were controlled. This indicates that the alloying elements such as silicon and manganese contributing to manganese equivalent($Mn_{eq}$) should be reduced to produce the ferrite-pearlite microstructure for the solid solution and precipitation hardened steel. It was found that a decrease in the rapid cooling temperature to $520^{\circ}C$ was effective to change the microstructure from ferrite-martensite to ferrite-pearlite-martensite. Typical dual-phase properties exhibiting a low yield ratio and a continuous yielding behavior were obtained when the rapid cooling temperature was in the range of $680^{\circ}C$ to $600^{\circ}C$. The critical volume fraction of martensite for the typical properties of dual-phase steel was about 11 percent.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04a
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• pp.23-26
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• 2004

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a Carbon Nitride (NDLC) thin film. NDLC thin film exhibits high electrical resistivity and thermal conductivity that are similar to the properties shown by diamond-like carbon (DLC) thin films. The diamond-like properties and nondiamond-like bonding make NDLC an attractive candidate for applications. A high pretilt angle of about $9.9^{\circ}$ by ion beam (IB) exposure on the NDLC thin film surface was measured. A good LC alignment is achieved by the IB alignment method on the NDLC thin film surface at annealing temperature of $200^{\circ}C$. The alignment defect of the NLC was observed above annealing temperature of $250^{\circ}C$. Consequently, the high pretilt angle and the good LC alignment by the IB alignment method on the NDLC thin film surface can be achieved.

• Journal of Practical Engineering Education
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• v.10 no.2
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• pp.125-129
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• 2018

This paper is about the numerical analysis on optimized internal flow of LTP furnace and uniformity of temperature. The LTP Furnace is the device that generates heat by electricity. And performs an annealing function for annealing the silicon wafer in the pre-semiconductor manufacturing process. Especially, the maximum temperature inside the chamber is maintained at a high temperature of about $400^{\circ}C$ to strengthen the wafer. When the process is completed at high temperature, the operation is repeated to reduce the temperature through the heat exchanger and carry it out. From this analysis, the ultimate goal is to derive the optimum design of the insulation volume supply/exhaust structure of the chamber through the flow analysis of the LTPS furnace. And to find cases for curriculum development.

• Journal of the Korean Society for Heat Treatment
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• v.32 no.3
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• pp.107-112
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• 2019

In order to investigate the effect of plastic deformation and annealing process parameters on strength and electrical conductivity of Cu-Fe alloys, Cu-10wt%Fe, Cu-15wt%Fe alloys were drawn up to ${\eta}=4$ and annealed in the temperature range of $300^{\circ}C$ to $700^{\circ}C$, followed by measurements of tensile strength and electric conductivity. As draw strain increases, tensile strength increases while electrical conductivity decreases. These observations result from reduction of dislocation density and decrease in Fe fiber spacing. Raising annealing temperature brought about decrease of tensile strength and increase of electrical conductivity up to $500^{\circ}C$, being followed by decreasing above $500^{\circ}C$. Such results are thought to be caused by decrease of dislocation density below $500^{\circ}C$ and rapid solubility increase of Fe in Cu above $500^{\circ}C$. For the purpose of obtaining both high strength and high conductivity, annealing process should be incorporated just prior to reaching to final draw strain. For Cu-10wt%Fe alloy, the tensile strength 706.9 MPa and the electrical conductivity 54.34%IACS were obtained through the processes of drawing up to ${\eta}=3$, annealing at $500^{\circ}C$ for 1 hour and additional drawing up to total strain of ${\eta}=4$.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.628-635
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• 2004

The characteristic of thin film resistor with low TCR( temperature coefficient of resistance ) and high precision are studied. The thin film resistor for 1/4W was fabricated and characteristic of these resistors was investigated. The fabricated device had the thickness of $2.48{\leqq}$ and the resistivity of $0.27{\omega}mm$. The electrical characteristic was evaluated by HP 4339B and 4284A instruments with HP l6339A. The profile of trimmed structure was also measured by non contact interferometer. The change of resistance and TCR increased with increasing roughness and resistance. To reduce the effect of stress annealing treatment was performed in the range of 563 to 623 K after trimming. The characteristic was improved after annealing. It is expected the fabricated device can be useful for high precision and low TCR. Fabricated thin film resistor has average deviation of resistance less than $0.35{\%}$ and TCR within 60.60ppm/K.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.102-102
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• 1999

Visible photoluminescence(PL) in si-implanted SiO2 films on crystaline silicon were observed. Thermal oxide films of 1 ${\mu}{\textrm}{m}$ thickness on P-type crystal silicon were made and si+ ions were implanted with 200keV acceleration voltage on ti. Argon laser (wavelength 488nm) and PM tube were used for PL measurements. As annealing time increased at low temperature, the visible PL intensity are increased and the peak positions are changed. On the other hand, with increasing annealing time at high temperature, the visible PL intensity are disappeared. From the PL peaks and intensity changes, XRD results, and TEM observations, we will discuss the origin of PL in Si+-implanted SiO2 films with oxygen righ defects and silicon rich defects.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.817-821
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• 2000

In this work, we have investigated the dependence of annealing temperature(T$\_$a/) on optical and electrical properties of amorphous hydrogenated SiC(a-SiC:H) films. The a-SiC:H films were deposited on corning glass and p-type Si(100) wafer by PECVD (plasma enhanced vapor deposition) using SiH$_4$+CH$_4$+N$_2$ gas mixture. The experimental results have shown that the optical energy band gap(E$\_$opt/)of the thin films annealed at high temperatures have shown that the graphitization of carbon clusters and micro-crystalline silicon occurs. The current-voltage characteristics have shown good electrical properties at the annealed films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.747-750
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• 2000

In this work, we investigated the dependence of optical and electrical properties of amorphous hydrogenated SiC (a-SiC:H) films on annealing temperature(T$\sub$a/). The a-SiC:H films were deposited by PECVD(plasma enhanced vapor deposition) on coming glass, p-type Si(100) wafer using SiH$_4$+CH$_4$+N$_2$gas mixture. The experimental results have shown that the optical energy band gap(E$\sub$g/) of the a-SiC thin films unchanged in the range of T$\sub$a/ from 400$^{\circ}C$ to 600$^{\circ}C$. The Raman spectrum of the thin films, annealed at high temperatures, has shown that graphitization of carbon clusters and micro-crystalline silicon occurs. The current-voltage characteristics have shown good electrical properties at the annealed films.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.140.1-140.1
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• 2013

The native silicon-oxide (SiOx) layer at the metal/Silicon interface acts as an electrical resistance to the metal contact of devices. Various methods are proposed for removing this layer, such as sputtering before metal contact formation or high temperature annealing. We studied the chemical evolution of the Au/SiOx/Si system during the annealing at $500^{\circ}C$ using a spatially resolved photoelectron emission method. Scanning photoelectron emission microscopy (SPEM) and core level spectra from local area of the sample show the inhomogeneous oxidation and formation of silicide of Au, as well as valence band spectra reveals the role of Au atoms during the dissociation process of SiOx.

• Journal of the Korean Society for Heat Treatment
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• v.36 no.5
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• pp.261-269
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• 2023

This study aims to investigate the effects of tungsten additions on the microstructure, corrosion characteristics, and hardness of super duplex stainless steel heat-treated at two different annealing temperatures. Under the annealing temperature of 1100℃, the microstructure of the stainless steels consisted mainly of ferrite, while under the annealing temperature of 1000℃, significant amounts of austenite and secondary phases were also observed. In terms of corrosion characteristics in 3.5 wt%NaCl solution, there was not a significant difference due to W addition at the 1100℃ conditions. However, at the 1000℃, a tendency of decreased corrosion resistance was observed with increasing the tungsten content. On the other hand, the micro-hardness of the stainless steel heat-treated 1000℃ showed an increasing trend with tungsten addition. This increase can be mainly attributed to the higher fraction of secondary phases, primarily sigma, known for their high hardness.