• Tribology and Lubricants
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• v.36 no.2
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• pp.88-95
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• 2020

In this study, we investigate the mechanical properties of high manganese steel, and the friction and wear characteristics of brake friction material containing this steel, for passenger car application, with the aim of replacing copper and copper alloys whose usage is expected to be restricted in the future. These steels are prepared using a vacuum induction melting furnace to produce binary and ternary alloys. The hardness and tensile strength of the high manganese steel decrease and the elongation increases with increase in manganese content. This material exhibits high values of hardness, tensile strength, and elongation; these properties are similar to those of 7-3 brass used in conventional friction materials. We fabricate high manganese steel fibers to prepare test pad specimens, and evaluate the friction and wear characteristics by simulating various braking conditions using a 1/5 scale dynamometer. The brake pad material is found to have excellent friction stability in comparison with conventional friction materials that use 7-3 brass fibers; particularly, the friction stability at high temperature is significantly improved. Additionally, we evaluate the wear using a wear test method that simulates the braking conditions in Europe. It is found that the amount of wear of the brake pad is the same as that in the case of the conventional friction material, and that the amount of wear of the cast iron disc is reduced by approximately 10. The high manganese steel is expected to be useful in the development of eco-friendly, copper-free friction material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.285-285
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• 2007

Friction material in a piezoelectric system is a important part to affect to moving performance. In this paper, alumina ceramics $(AlO_2)$, silicon carbide (SiC), high speed steel and super-hard alloy (WC, Tungsten Carbide) having a hardness knoop of 1000 to 2000 $kg/mm^2$ were tested as a friction material of AF module. Even though $AlO_2$, SiC and high speed steel were a high-hardness material, $AlO_2$ and SiC were worn by a rough surface, and SiC is rusted in humidity condition. AF module using super-hard alloy has showed a stable moving performance in life time test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.63-66
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• 2004

The extraordinary intrinsic properties of SiC have made this material a suitable choice to use in high temperature, high frequency, and high voltage applications. In additional to these, SiC could be employed as the based material for nonvolatile memory applications, mainly due to its extremely low thermal-generation rate at room temperature. In this paper, the reasons of using this material in this particular application is presented and the development of the application over the past fifteen years is reviewed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.15-16
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• 2005

Chalcogenide phase change memory has high performance to be next generation memory, because it is a nonvolatile memory processing high programming speed, low programming voltage, high sensing margin, low consumption and long cycle duration. We have developed a new material of PRAM with $Ge_1Se_1Te_2$. This material has been propose to solve the high energy consumption and high programming current. We have investigated the phase transition behaviors in function of various process factor including contact size, cell size, and annealing time. As a result, we have observed that programming voltage and writing current of $Ge_1Se_1Te_2$ are more improved than $Ge_2Sb_2Te_5$ material.

• Macromolecular Research
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• v.16 no.7
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• pp.663-665
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• 2008

• Journal of the Korean Ceramic Society
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• v.52 no.4
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• pp.229-233
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• 2015

Currently, the majority of commercial white LEDs are phosphor converted LEDs made of a blue-emitting chip and YAG yellow phosphor dispersed in organic silicone. However, silicone in high-power devices results in long-term performance problems such as reacting with water, color transition, and shrinkage by heat. Additionally, yellow phosphor is not applicable to warm white LEDs that require a low CCT and high CRI. To solve these problems, mixing of green phosphor, red phosphor and glass, which are stable in high temperatures, is common a production method for high-power warm white LEDs. In this study, we fabricated conversion lenses with LUAG green phosphor, SCASN red phosphor and low-softening point glass for high-power warm white LEDs. Conversion lenses can be well controlled through the phosphor content and heat treatment temperature. Therefore, when the green phosphor content was increased, the CRI and luminance efficiency gradually intensified. Moreover, using high heat treatment temperatures, the fabricated conversion lenses had a high CRI and low luminance efficiency. Thus, the fabricated conversion lenses with green and red phosphor below 90 wt% and 10 wt% with a sintering temperature of $500^{\circ}C$ had the best optical properties. The measured values for the CCT, CRI and luminance efficiency were 3200 K, 80, and 85 lm/w.

• Journal of the Korean Society of Industry Convergence
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• v.18 no.1
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• pp.37-44
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• 2015

In the research, we developed a device for cooling the drive section of the gripper of a robot for handling the high temperature material. In this study, By using a Peltier element, the high-temperature material is not affected and driving cylinder is cooled to prevent damage due to high temperatures. Hot part of the Peltier element is towards the robot gripper. Cool part of the Peltier element is towards the driving cylinder. The heat sink portion is made to keep the cooling effect. As the performance result, cooling-test is taken, and their result is satisfy.

• Journal of Applied Reliability
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• v.16 no.3
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• pp.202-207
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• 2016

Purpose: The purpose of this study is main factors (environmental conditions, pattern spacing, pattern material) that effect the ion-migration of PCB. Methods: Recently, the electronic components are becoming more high density of electronic device, so that electronic circuits have smaller pitches between the patten and more vulnerable to insulation failure. so the reliability of electric insulation of device has become an ever important issue as device contact pitches of pattern. Usually, ion-migration occurs in high temperature and high humidity environment as voltage is applied to the circuit. Under high temperature and high humidity, voltage applied electronic components respond to applied voltages by metals's electrochemical ionization and a conducting filament forms between the anode and cathode across a nonmetallic medium. This leads to short-circuit failure of the electronic component. Results: we studied ion-migration that occurs in accordance with the main factors (environmental conditions, pitches, pattern material). The PCB pattern material was made by two different types of material (free solder, OSP) for this research and pitches of pattern is 0.15mm, 0.3mm, 0.5mm. PCB was experimented in the environmental conditions (high temperature $120^{\circ}C$, high temperature and high humidity $85^{\circ}C$, 85%RH) and was analyzed for ion-migration through the experiment results. Conclusion: We confirmed that environmental condition, pitches of pattern, pattern material had effect on ion-migration of PCB.

• Proceedings of the Korean Nuclear Society Conference
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• 2005.05a
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• pp.473-474
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• 2005

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.154-154
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• 2013

In this work, we investigated the characteristics and the effects of light on the negative gate bias stress stability (NBS) in high mobility polycrystalline IGO TFTs. IGO TFT showed a high drain current on/off ratio of ${\sim}10^9$, a field-effect mobility of $114cm^2/Vs$, a threshold voltage of -4V, and a subthresholdslpe(SS) of 0.28V/decade from log($I_{DS}$) vs $V_{GS}$. IGO TFTs showed large negative $V_{TH}$ shift(17V) at light power of $5mW/cm^2$ with negative gate bias stress of -10V for 10000seconds, at a fixed drain voltage ($V_{DS}$) of 0.5V.