Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A high performance nonvolatile memory cell with phase change material of $Ge_1Se_1Te_2$

$Ge_1Se_1Te_2$ 상변화 재료를 이용한 고성능 비휘발성 메모리에 대한 연구

  • Lee, Jae-Min (Department of Electronic Materials Engineering, Kwangwoon Univ.) ;
  • Shin, Kyung (Department of Electronic Materials Engineering, Kwangwoon Univ.) ;
  • Chung, Hong-Bay (Department of Electronic Materials Engineering, Kwangwoon Univ.)
  • 이재민 (전자재료공학과 광운대학교) ;
  • 신경 (전자재료공학과 광운대학교) ;
  • 정홍배 (전자재료공학과 광운대학교)
  • Published : 2005.07.07
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Abstract

Chalcogenide phase change memory has high performance to be next generation memory, because it is a nonvolatile memory processing high programming speed, low programming voltage, high sensing margin, low consumption and long cycle duration. We have developed a new material of PRAM with $Ge_1Se_1Te_2$. This material has been propose to solve the high energy consumption and high programming current. We have investigated the phase transition behaviors in function of various process factor including contact size, cell size, and annealing time. As a result, we have observed that programming voltage and writing current of $Ge_1Se_1Te_2$ are more improved than $Ge_2Sb_2Te_5$ material.

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