• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.12
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• pp.597-600
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• 2002

Film Bulk Acoustic wave Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size and low cost, high Q RF circuit elements with wide applications in communications area. This paper presents a MMIC compatible suspended FBAR using surface micromachining. Membrane is composed $Si_3N_4SiO_2Si _3N_4$ multi layer and air gap is about 50${\mu}{\textrm}{m}$. Firstly, We perform one dimensional simulation applying transmission line theorem to verify resonance characteristic of the FBAR. Process of the FBAR is used MEMS technology. Fabricated FBAR resonate at 2.4GHz, $K^2_{eff}$ and Q are 4.1% and 1100.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.7
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• pp.26-31
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• 2005

In this paper, a small BPF(band pass filter) is designed using new probe type for wireless communication system. The dielectric resonator is used high Q ceramics for low loss characteristic. In order to provide a band pass filter which can be reduced in dimension, can be reduced in height, and can be surface-mounted. The filter was fabricated using $TE_{01{\delta}}$ mode dielectric resonator. The input/output probes are attached to coner portion of the rectangular metal cavity. Results of the manufactured filter($12{\times}12{\times}8[mm]$) show that the center frequency is 9.95358[GHz], the insertion loss is -1.9[dB], the 3[dB]_bandwidth is 14.9[MHz], and the loaf Q is 664.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.6
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• pp.627-634
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• 2010

In this paper, a novel voltage-controlled oscillator(VCO) using the complimentary bifilar archimedean spiral resonator(CBASR) is presented for reducing the phase noise characteristic. A CBASR has compact dimension, a sharp skirt characteristic in stopband, a low insertion loss in passband, and a large coupling coefficient value, which makes a high Q value and improve the phase noise of VCO. The proposed VCO has the oscillation frequency of 2.396~2.502 GHz in the tuning voltage of 0~5 V, the output power of 7.5 dBm and phase noise of -119.16~-120.2 dBc/㎐ at the offset frequency of 100 kHz in tuning range.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.4
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• pp.279-285
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• 2017

In this paper, the resonator with a parallel plate capacitor is newly proposed around sub-microwave frequency band and applied to earlobe for non-invasive glucose monitoring the human biological tissue. The capacitor including the earlobe as dielectric material is connected to inductive slot in the ground plane of the microstrip line. Based on the simulation, one port resonator circuit is designed and fabricated as a prototype. Three step glucose concentration levels(0, 250, 500 mg/dL) was tested, and its reflection coefficients($S_{11}$) were measured. Owing to high Q resonator more than 100, resonant frequency shift of about 9 MHz per glucose level of 250 mg/dL has been successfully measured. This proves that the proposed sensor is applicable to a blood glucose sensor.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.10
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• pp.3866-3872
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• 2010

This paper presents a design of high power oscillator using a spiral resonator and high power transistor with measurement. Even lots of drawbacks are known in design of oscillators using high power transistors, the spiral resonator is adopted because it has relatively high Q out of planar resonators. The designed power oscillator at 1.8GHz is fabricated and tested. Measurement shows the obtained output power is 23.5dBm at 1.74GHz with -146.76dBc/Hz of phase noise at 1MHz offset. In addition, it is illustrated that the frequency stability is excellent with the shift less than 1MHz and the measured maximum output power is around 24dBm when the bias voltages are adjusted.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2013.04a
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• pp.835-841
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• 2013

Modern solid-state gyroscopes (HRG) with hemispherical resonators from high-purity quartz glass and special surface superfinishing and ultrathin gold coating become the best instruments for precise-grade inertial reference units (IRU) targeting long-term space missions. Designing of these sensors could be a notable contribution into development of Korea as a space nation. In participial, 40mm diameter thin-shell resonator from high-purity fused quartz, fabricated as a single-piece with its supporting stem has been designed, machined, etched, tuned, tested, and delivered by STM Co. (ATS of Ukraine) several years ago; an extremely-high Q-factor (upto 10~20 millions) has been shown. Understanding of the best way how to match such a unique sensor with inner glass assembly of the gyro means how to use the high potential in a maximal extent; and this has become the urgent task. Inner quartz glass assembly has a very thin indium (In) layer soldered the resonator and its silica base (case), but effects of internal resonances between operational modal pair of the shell-cup and its side (parasitic) modes can notable degrade the potential of the sensor as a whole, instead of so low level of resonator's intrinsic losses. Unfortunately, there are special combinations of dimensions of the parts (so-called, "resonant sizes"), when intensive losses of energy occurs. The authors proposed to use the length of stem's fixture as an additional design parameter to avoid such cases. So-called, a cyclic scheme of finite element method (FEM) and ANSYS software were employed to estimate different combinations of gyro assembly parameters. This variant has no mismatches of numerical origin due to FEM's discrete mesh. The optimum length and dangerous "resonant lengths" have been found. The special attention has been paid to analyses of 3D effects in a cup-stem transient zone, including determination of a difference between the positions of geometrical Pole of the resonant hemisphere and of its "dynamical Pole", i.e., its real zone of oscillation node. Boundary effects between the shell (cup) and 3D short "beams" (inner and outer stems) have been ranged. The results of the numerical experiments have been compared with the classic model of a quasi-hemispherical shell band with inextensional midsurface, and the solution using Rayleigh's functions of the $1^{st}$ and $2^{nd}$ kinds. To guarantee the truth of the recommended sizes to a designer of the real device, the analytical and FEM results have been compared with experimental data for a party of real resonators. The consistency of the results obtained by different means has been shown with errors less than 5%. The results notably differ from the data published earlier by different researchers.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.10
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• pp.877-882
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• 2016

In this paper, a novel CMOS high Q factor 2-port active inductor has been proposed. The proposed circuit is designed by cascading basic gyrator-C structural active inductors and attaching the feedback LC resonance circuit. This LC resonator can compensate parasitic capacitance of transistor and can improve Q factor over wide frequency range. The proposed circuit was fabricated and simulated using 65 nm Samsung RF CMOS process. The fabricated circuit shows inductance of above 2 nH and Q factor higher than 40 in the frequency range of 1~6 GHz.

• Transactions on Electrical and Electronic Materials
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• v.3 no.3
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• pp.25-28
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• 2002

In this study, microstructural, dielectric and electrical properties of (Pb$\sub$0.83/) (La$\sub$0.2/Ce$\sub$0.8/)$\sub$0.08/TiO$_3$(PCT) ceramics as a function of MnO$_2$ addition and electrode size variation were investigated for 30 MHz high frequency ceramic resonator application. Grain size was gradually increased according to the increase of MnO$_2$ addition amount. Moreover, the density showed a constant value with increasing MnO$_2$ addition amount. Dielectric constant was decreased with increasing MnO$_2$ addition amount. Curie temperature of all the composition ceramics was nearly constant around 330$^{\circ}C$. The maximum D.R.of 50.5 dB and maximum Q$\sub$mt3/ of 1842 in the 3$\^$rd/ overtone vibration mode were appeared at the composition of 0.3wt% MnO$_2$, respectively.

• Journal of Sensor Science and Technology
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• v.29 no.5
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• pp.354-359
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• 2020

The high vacuum hermetic sealing technique ensures excellent performance of MEMS resonators. For the high vacuum hermetic sealing, the customization of anodic bonding equipment was conducted for the glass/Si/glass triple-stack anodic bonding process. Figure 1 presents the schematic of the MEMS resonator with triple-stack high-vacuum anodic bonding. The anodic bonding process for vacuum sealing was performed with the chamber pressure lower than 5 × 10^-6 mbar, the piston pressure of 5 kN, and the applied voltage was 1 kV. The process temperature during anodic bonding was 400 ℃. To maintain the vacuum condition of the glass cavity, a getter material, such as a titanium thin film, was deposited. The getter materials was active at the 400 ℃ during the anodic bonding process. To read out the electrical signals from the Si resonator, a vertical feed-through was applied by using through glass via (TGV) which is formed by sandblasting technique of cap glass wafer. The aluminum electrodes was conformally deposited on the via-hole structure of cap glass. The TGV process provides reliable electrical interconnection between Si resonator and aluminum electrodes on the cap glass without leakage or electrical disconnection through the TGV. The fabricated MEMS resonator with proposed vacuum packaging using three-layer anodic bonding process has resonance frequency and quality factor of about 16 kHz and more than 40,000, respectively.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.8 no.4
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• pp.243-248
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• 2015

Since phase noise is one of the most important parameters in the design of microwave oscillators, several methods have been proposed to reduce the phase noise. These methods have focused on improving the quality factor of resonators, which result in low phase noise oscillators. Dielectric resonators have been widely used for low phase noise in microwave oscillators due to their high quality factor. However this cannot be used in MMIC oscillators because they have a 3D structure. In this paper, to overcome this problem a novel resonator using open ring type DGS is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator, and oscillator for 5.8GHz band is designed using proposed DGS resonator. The open ring type DGS resonator is composed of DGS cell etched on ground plane under $50{\Omega}$ microstrip line. At the fundamental frequency of 5.8GHz, 6.1dBm output power and -82.7 dBc@100kHz phase noise have been measured for oscillator with ring type DGS resonator. The phase noise characteristics of oscillator is improved about 96.5dB compared to one using the general ${\lambda}/4$ microstrip resonator.