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http://dx.doi.org/10.46670/JSST.2020.29.5.354

Wafer-level Vacuum Packaging of a MEMS Resonator using the Three-layer Bonding Technique  

Yang, Chung Mo (National Nano Fab Center)
Kim, Hee Yeoun (National Nano Fab Center)
Park, Jong Cheol (National Nano Fab Center)
Na, Ye Eun (National Nano Fab Center)
Kim, Tae Hyun (National Nano Fab Center)
Noh, Kil Son (National Nano Fab Center)
Sim, Gap Seop (National Nano Fab Center)
Kim, Ki Hoon (Ubitronics)
Publication Information
Journal of Sensor Science and Technology / v.29, no.5, 2020 , pp. 354-359 More about this Journal
Abstract
The high vacuum hermetic sealing technique ensures excellent performance of MEMS resonators. For the high vacuum hermetic sealing, the customization of anodic bonding equipment was conducted for the glass/Si/glass triple-stack anodic bonding process. Figure 1 presents the schematic of the MEMS resonator with triple-stack high-vacuum anodic bonding. The anodic bonding process for vacuum sealing was performed with the chamber pressure lower than 5 × 10-6 mbar, the piston pressure of 5 kN, and the applied voltage was 1 kV. The process temperature during anodic bonding was 400 ℃. To maintain the vacuum condition of the glass cavity, a getter material, such as a titanium thin film, was deposited. The getter materials was active at the 400 ℃ during the anodic bonding process. To read out the electrical signals from the Si resonator, a vertical feed-through was applied by using through glass via (TGV) which is formed by sandblasting technique of cap glass wafer. The aluminum electrodes was conformally deposited on the via-hole structure of cap glass. The TGV process provides reliable electrical interconnection between Si resonator and aluminum electrodes on the cap glass without leakage or electrical disconnection through the TGV. The fabricated MEMS resonator with proposed vacuum packaging using three-layer anodic bonding process has resonance frequency and quality factor of about 16 kHz and more than 40,000, respectively.
Keywords
MEMS gyro sensor; Anodic bonding; Wafer level vacuum packaging; Q-factor;
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