• Journal of the Korea Institute of Military Science and Technology
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• v.25 no.6
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• pp.580-585
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• 2022

In this study, the high-temperature dielectric constant of Si₃N₄ ceramics, a representative non-oxide-based radome material, was evaluated and the cause of the dielectric constant change was analyzed in relation to the oxidation behavior. The dielectric constant of Si₃N₄ ceramics was 7.79 at room temperature, and it linearly increased as the temperature increased, showing 8.42 at 1,000 ℃. As results of analyzing the microstructure and phase for the Si₃N₄ ceramics before and after heat-treatment, it was confirmed that oxidation did not occur at all or occurred only on the surface at a very insignificant level below 1,000 ℃. Based on this, it is concluded that the increase in the dielectric constant according to the temperature increase of Si₃N₄ ceramics is irrelevant to the oxidation behavior and is only due to the activation of charge polarization.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.57-57
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• 2003

High dielectric constant materials (high K) have attracted a great deal of interest because of the dramatic scaling down of DRAM capacitor reaching its physical limit in terms of reduction of thickness. Among high-K materials that can replace silicon dioxide, tantalum pentoxide (Ta2O5) thin film, with their high dielectric constant (∼25) and good step coverage, is the candidate of choice.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.642-645
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• 2002

Microwave dielectric properties of $ZnWO_4$ ceramic were investigated with calcination and sintering temperatures. The dielectric properties required for such application are high dielectric constant$(\varepsilon_r)$, high $Q{\times}f_o$ value and low temperature coefficient of resonant frequency$(\tau_f)$. These requirement correspond to necessities for size reduction, excellent frequency selectivity, good temperature stability of devices. $ZnWO_4$ ceramics could be sintered at low $1075^{\circ}C$, which was comparatively low temperature for microwave dielectrics. As a result, $ZnWO_4$ showed the dielectric constant of 13, quality factor($Q{\times}f_o$ value) of 22000 and 'temperature coefficient of resonant frequency$(\tau_f)$ of $-65{\pm}5ppm/^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.37 no.5
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• pp.511-515
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• 2000

The effect of Ba2+ ion dissolution with different pH and amount of PAA on microstructural changes of green and sintered bodies and its electrical properties was studied in aqueous nano-size BaTiO3 slurry system. The dissolution of Ba2+ was least at strong base, pH 10.8 and by addition of amount of 0.15 wt% PAA. The green body with the lowest of dissolution of Ba2+ at pH 10.8 and 0.15 wt% PAA had minimum values of average pore size, 40nm and shown high increase of sintered density. The compact sintered at 125$0^{\circ}C$ for 2 hr with highest Ba2+ dissolution had low density and dielectric constant due to abnormal grian growth. However, the sintered body with the lowest Ba2+ dissolution had high sintered density and then shown high dielectric constant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.290-294
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• 2001

In this study, ZnO is evaporated to be coated on n-type Si wafer substrate. Refractive coefficient of thin film that is evaporating TiO$_2$ onto ZnO increases linearly as thickness is getting thinner to have high value and high angle and it satisfies theoretical equation I(x)=Io exp (-$\alpha$x) theory that represents the strength of photon energy advancing through ZnO thin film. And dielectric constant of TiO$_2$ thin film evaporated onto ZnO is high and $\varepsilon$$_2$ is smaller than $\varepsilon$$_1$. The specimen TiO$_2$ thin film evaporated onto ZnO has much higher dielectric constant when photon energy is increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.559-562
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• 2000

In this paper, coplanar waveguide fed antennas (CPWFAs) insetting two slits to boundary of the square microstrip patch are presented. These slits play roles in not only lowering a resonant frequency but also fine-tuning for the proposed antenna together with open stub of CPW feed line. The CPWFAs were designed and manufactured using microwave dielectrics (Al,Mg)TaO$_2$ having high dielectric-constant ($\varepsilon$r=20). The return loss and input impedance of the CPWFAs were investigated in terms of the slit length and open stub length of CPW feed line. It is shown that a resonant frequency decreases as the slit length increases.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.37 no.1C
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• pp.34-37
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• 2012

The paper introduces the an necklace type UHF RFID tag for a live tree having high dielectric constant. When a general UHF RFID tag is used for the metal and the material with high dielectric constant, the electrical characteristics and impedance of antenna have been changed, and the tag is not recognized by an UHF RFID reader. The necklace type UHF RFID tag has been designed with consideration of the high dielectric constant of the tree material. The name tag for a live tree has been designed with the developed tag antenna. The performance of tag has been measured and the reading range is about 4~5m. The developed UHF RFID tag antenna can be applied to any high dielectric material for various industrial applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.328-328
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• 2008

As a low K material for high frequency high integration modules, glass/ceramic composites were investigated. Glass composition were selected from $SiO_2-B_2O_3-Al_2O_3-R_2O$-RO system which having very low dielectric constant and cordierite was used as a ceramic filler. These composites were sintered at temperature range from $850^{\circ}$ to $950^{\circ}$ and XRD, SEM microstructure analysis of sintered bodies were performed for understanding sintering behavior. Any crystallization was not occurred and dense sintered bodies were attained. Dielectric and mechanical properties of these sintered glass/cordierite composites were analysed by network analyzer and UTM. Glass/ceramic composite with 50 wt% cordierite showing a dielectric constant (${\varepsilon}_r$) of 5.4, Q${\times}f_0$ (Q) of 1600 at 1 GHz and maximum bending strength of 163 MPa was attained.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.11
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• pp.603-608
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• 2000

$(Ba, Sr)TiO_{3}$[BST] thin films were fabricated on the Pt/TiO$_2$/SiO$_2$/Si substrate by the RF sputtering. The structure and dielectric properties of the BST thin films with the substrate temperature were investigated. Increasing the substrate temperature, The BST phase increased and barium multi titanate phases decreased. Increasing the frequency, the dielectric constant decreased and the dielectric loss increased. The dielectric constant and dielectric loss of the BST thin films deposited at 50$0^{\circ}C$ were 300 and 0.018, respectively at 1 kHz. The leakage current density of the BST thin films deposited at 50$0^{\circ}C$ was $10^{-9}$ A/$\textrm{cm}^2$ with applied voltage of 3V. Because of the high dielectric constant(300), low dielectric loss(0.018) and low leakage current($10^{-9}$ A/$\textrm{cm}^2$), BST thin films deposited at 50$0^{\circ}C$ is expecting for the application of DRAM.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.543-548
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• 2014

In this paper, the dielectric relaxation and reliability of high capacitance density metal-insulator-metal (MIM) capacitors using $Al_2O_3-HfO_2-Al_2O_3$ and $SiO_2-HfO_2-SiO_2$ sandwiched structure under constant voltage stress (CVS) are characterized. These results indicate that although the multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature, it induces greater dielectric relaxation level (in ppm). It is also shown that dielectric relaxation increases and leakage current decreases as functions of stress time under CVS, because of the charge trapping effect in the high-k dielectric.