Journal of the Korea Institute of Military Science and Technology (한국군사과학기술학회지)

The Korea Institute of Military Science and Technology (한국군사과학기술학회)
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Correlation between Dielectric Constant Change and Oxidation Behavior of Silicon Nitride Ceramics at Elevating Temperature up to 1,000 ℃

질화규소 세라믹스의 고온(~1,000 ℃) 유전상수 변화와 산화 거동의 상관관계 고찰

  • Seok-Min, Yong (Defense Material/Energy Technology Center, Agency for Defense Development) ;
  • Seok-Young, Ko (Defense Material/Energy Technology Center, Agency for Defense Development) ;
  • Wook Ki, Jung (Defense Material/Energy Technology Center, Agency for Defense Development) ;
  • Dahye, Shin (Defense Material/Energy Technology Center, Agency for Defense Development) ;
  • Jin-Woo, Park (Defense Material/Energy Technology Center, Agency for Defense Development) ;
  • Jaeho, Choi (Defense Material/Energy Technology Center, Agency for Defense Development)
  • 용석민 (국방과학연구소 국방소재/에너지기술센터) ;
  • 고석영 (국방과학연구소 국방소재/에너지기술센터) ;
  • 정욱기 (국방과학연구소 국방소재/에너지기술센터) ;
  • 신다혜 (국방과학연구소 국방소재/에너지기술센터) ;
  • 박진우 (국방과학연구소 국방소재/에너지기술센터) ;
  • 최재호 (국방과학연구소 국방소재/에너지기술센터)
  • Received : 2022.06.21
  • Accepted : 2022.11.25
  • Published : 2022.12.05
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Abstract

In this study, the high-temperature dielectric constant of Si3N4 ceramics, a representative non-oxide-based radome material, was evaluated and the cause of the dielectric constant change was analyzed in relation to the oxidation behavior. The dielectric constant of Si3N4 ceramics was 7.79 at room temperature, and it linearly increased as the temperature increased, showing 8.42 at 1,000 ℃. As results of analyzing the microstructure and phase for the Si3N4 ceramics before and after heat-treatment, it was confirmed that oxidation did not occur at all or occurred only on the surface at a very insignificant level below 1,000 ℃. Based on this, it is concluded that the increase in the dielectric constant according to the temperature increase of Si3N4 ceramics is irrelevant to the oxidation behavior and is only due to the activation of charge polarization.

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References

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