Atomic layer deposition으로 증착된 Ta2O5 박막의 전도기구에 대한 UV ozone annealing 효과

Effects of UV ozone annealing on conduction mechanism in Ta2O5 thin films deposited by atomic layer deposition

High dielectric constant materials (high K) have attracted a great deal of interest because of the dramatic scaling down of DRAM capacitor reaching its physical limit in terms of reduction of thickness. Among high-K materials that can replace silicon dioxide, tantalum pentoxide (Ta2O5) thin film, with their high dielectric constant (∼25) and good step coverage, is the candidate of choice.