한국재료학회:학술대회논문집 (Proceedings of the Materials Research Society of Korea Conference)
- 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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- Pages.57-57
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- 2003
Atomic layer deposition으로 증착된 Ta2O5 박막의 전도기구에 대한 UV ozone annealing 효과
Effects of UV ozone annealing on conduction mechanism in Ta2O5 thin films deposited by atomic layer deposition
초록
High dielectric constant materials (high K) have attracted a great deal of interest because of the dramatic scaling down of DRAM capacitor reaching its physical limit in terms of reduction of thickness. Among high-K materials that can replace silicon dioxide, tantalum pentoxide (Ta2O5) thin film, with their high dielectric constant (∼25) and good step coverage, is the candidate of choice.
키워드