• Transactions on Electrical and Electronic Materials
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• v.15 no.2
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• pp.91-95
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• 2014

This paper presents the structure and process technology of simple and low-cost wafer-level packaging (WLP) for thin film radio frequency (RF) devices. Low-cost practical micromachining processes were proposed as an alternative to high-cost processes, such as silicon deep reactive ion etching (DRIE) or electro-plating, in order to reduce the fabrication cost. Gold (Au)/Tin (Sn) alloy was utilized as the solder material for bonding and hermetic sealing. The small size fabricated WLP of $1.04{\times}1.04{\times}0.4mm^3$ had an average shear strength of 10.425 $kg/mm^2$, and the leakage rate of all chips was lower than $1.2{\times}10^{-5}$ atm.cc/sec. These results met Military Standards 883F (MIL-STD-883F). As the newly proposed WLP structure is simple, and its process technology is inexpensive, the fabricated WLP is a good candidate for thin film type RF devices.

• Journal of the Korean Ceramic Society
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• v.54 no.5
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• pp.400-405
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• 2017

$P_2O_5-ZnO-SiO_2-R_2O$ glasses were synthesized as a sealing material for large scale dye-sensitized solar cells (DSSC). Compositional effects of $P_2O_5$ and ZnO were examined by varying their contents. Their viscosity and glass stability at sintering temperatures of less than $550^{\circ}C$ were examined by flow button test. Glass transition temperature and structural change upon compositional change were investigated. Chemical stability against electrolyte was also examined by immersing the glasses in the electrolyte for 72 h at $85^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.29 no.5
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• pp.354-359
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• 2020

The high vacuum hermetic sealing technique ensures excellent performance of MEMS resonators. For the high vacuum hermetic sealing, the customization of anodic bonding equipment was conducted for the glass/Si/glass triple-stack anodic bonding process. Figure 1 presents the schematic of the MEMS resonator with triple-stack high-vacuum anodic bonding. The anodic bonding process for vacuum sealing was performed with the chamber pressure lower than 5 × 10^-6 mbar, the piston pressure of 5 kN, and the applied voltage was 1 kV. The process temperature during anodic bonding was 400 ℃. To maintain the vacuum condition of the glass cavity, a getter material, such as a titanium thin film, was deposited. The getter materials was active at the 400 ℃ during the anodic bonding process. To read out the electrical signals from the Si resonator, a vertical feed-through was applied by using through glass via (TGV) which is formed by sandblasting technique of cap glass wafer. The aluminum electrodes was conformally deposited on the via-hole structure of cap glass. The TGV process provides reliable electrical interconnection between Si resonator and aluminum electrodes on the cap glass without leakage or electrical disconnection through the TGV. The fabricated MEMS resonator with proposed vacuum packaging using three-layer anodic bonding process has resonance frequency and quality factor of about 16 kHz and more than 40,000, respectively.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.239-242
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• 2003

Optical module package is a hermetic metal-ceramic package for carrying optical IC. In case of LD(laser diode) module, window is used for both the path of optical signal and hermetic sealing of package. So, window has the metallization pattern on the surface for brazing process with package wall. In this study, several method were investigated for metallization. Thin film, thick film and mixed method were used for fabrication of metallization pattern. After brazing process, hermeticity and adhesion strength were tested for characterization of metallization pattern.

• Journal of Information Display
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• v.3 no.1
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• pp.11-16
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• 2002

This paper presents a study on the tubeless Plasma Display Panel (PDP) packaging using glass-to-glass electrostatic bonding with intermediate amorphous silicon. The bonded sample sealing the mixed gas with three species showed high strength ranging from 2.5 MPa to 4 MPa. The glass-to-glass bonding for packaging was performed at a low temperature of $180^{\circ}C$ by applying bias of 250 $V_{dc}$ in ambient of mixed gases of He-Ne(27 %)-Xe(3 %). The tubeless packaging was accomplished by bonding the support glass plate of $30mm{\times}50mm$ on the rear glass panel and the capping glass of $20mm{\times}20mm$. The 4-inch color AC-PDP with thickness of 8 mm was successfully fabricated and fully emitted as white color at a firing voltage of 190V.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.29-36
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• 2008

In this paper, mechanical reliability issues of copper through-wafer interconnections are investigated numerically and experimentally. A hermetic wafer level packaging for MEMS devices is developed. Au-Sn eutectic bonding technology is used to achieve hermetic sealing, and the vertical through-hole via filled with electroplated copper for the electrical connection is also used. The MEMS package has the size of $1mm{\times}1mm{\times}700{\mu}m$. The robustness of the package is confirmed by several reliability tests. Several factors which could induce via hole cracking failure are investigated such as thermal expansion mismatch, via etch profile, and copper diffusion phenomenon. Alternative electroplating process is suggested for preventing Cu diffusion and increasing the adhesion performance of the electroplating process. After implementing several improvements, reliability tests were performed, and via hole cracking as well as significant changes in the shear strength were not observed. Helium leak testing indicated that the leak rate of the package meets the requirements of MIL-STD-883F specification.

• Journal of the Korean Ceramic Society
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• v.50 no.1
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• pp.57-62
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• 2013

We investigated the thermal and electrical properties of the $B_2O_3-ZnO-Bi_2O_3$ glass system as a sealing material in sheath heater modules. A composition with over 90 wt% $Bi_2O_3$ in the $B_2O_3-ZnO-Bi_2O_3$ system was glassified by controlling the cooling rate. The glass transition temperature and thermal expansion coefficient in bismate glass could be controlled by the minor ingredients of ZnO, $SiO_2$, $BaO_2$, and $K_2O$. The $B_2O_3-ZnO-Bi_2O_3$ glass system bonded well to metal, and bismate glass insulating properties were comparable to those of bismate glass $B_2O_3-ZnO-PbO$ glass system in a sheath heater module.

• Journal of the Korean Ceramic Society
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• v.26 no.6
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• pp.829-835
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• 1989

Devitrifing solder glasses in a specific group of glass ceramic materials are extensively used in hermetically sealing alumina electronics packages. Preferred frit glass compositions of this study consist of 37~40wt% PbO, 35~40wt% ZnO, 18~20wt% B2O3, 1~3wt% SiO2, 0~6wt% TiO2. The coated frit glasses crystallize during firing and form a strong hermetic seal. DTA and X-ray diffraction were used to characterize crystallization of the glass frit. Frit seal containing 2wt% TiO2 has crystallization temperature of 550~57$0^{\circ}C$ with surface nucleation. Frit seal containing 6wt% TiO2 has crystallization temperature of 515~5$25^{\circ}C$ with bulk nucleation, and the main crystalline phase was perovskite lead titanate having minus expansion coefficient. The average activation energy for the crystallization calculated from Ozawa equation was 65$\pm$10kcal/mol.

• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.5-9
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• 2004

A new wafer level packaging scheme is presented as an alternative to MEMS package. The proof-of-concept structure is fabricated and evaluated to confirm the feasibility of the idea for MEMS wafer level packaging. The scheme of this work is developed using an electroplated tin (Sn) solder. The critical difference over conventional ones is that wafers are laterally bonded by solder reflow after LEGO-like assembly. This lateral bonding scheme has merits basically in morphological insensitivity and its better bonding strength over conventional ones and also enables not only the hermetic sealing but also its electrical interconnection solving an open-circuit problem by notching through via-hole. The bonding strength of the lateral bonding is over 30 Mpa as evaluated under shear and the hermeticity of the encapsulation is 2.0$\times10^{-9}$mbar.$l$/sec as examined by pressurized Helium leak rate. Results show that the new scheme is feasible and could be an alternative method for high yield wafer level packaging.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.50 no.1
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• pp.31-38
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• 2022

TR module using in satellite must consider discriminative electrical and mechanical requirements compare to the one using in ground and aircraft system since not only the environment level of vibration and shock during the launch stage but also the level of radiation, vacuum and thermal variation from orbit environment are more severe than atmosphere condition. This paper describes the environmental conditions of launch and the orbit and, suggests design method of TR module applying GaN to satisfy the unique environmental requirements of satellite systems by especially focusing on parts selection, derating design, RF budget design, manufacturing process design, and thermal design of TR module.