• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.543-551
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• 2012

In this study, transparent conducting Al-doped Zinc Oxide (AZO) films with a thickness of 150 nm were prepared on corning glass substrate by the RF magnetron sputtering with using a Al-doped zinc oxide (AZO), ($Al_2O_3$: 2 wt%) target at room temperature. This study investigated the effect of rapid thermal annealing temperature and oxygen ambient on structural, electrical and optical properties of Al-doped zinc oxide (AZO) thin films. The films were annealed at temperatures ranging from 400 to $700^{\circ}C$ by using Rapid thermal equipment in oxygen ambient. The effect of RTA treatment on the structural properties were studied by x-ray diffraction and atomic force microscopy. It is observed that the Al-doped zinc oxide (AZO) thin film annealed at $500^{\circ}C$ at 5 minute oxygen ambient gas reveals the strongest XRD emission intensity and narrowest full width at half maximum among the temperature studied. The enhanced UV emission from the film annealed at $500^{\circ}C$ at 5 minute oxygen ambient gas is attributed to the improved crystalline quality of Al-doped zinc oxide (AZO) thin film due to the effective relaxation of residual compressive stress and achieving maximum grain size.

• Journal of the Korean Ceramic Society
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• v.32 no.10
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• pp.1169-1177
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• 1995

Barium nitrate and yittrium nitrate were dissolved into distilled water. Titaium hydroxide precipitated from titanium chloride with NH4OH was dissolved into nitric acid. Each aqueous solution was mixed for 12 hr in the composition of Ba1-xYxTiO3 (x=0.1∼0.6) and the concentration of mixed solution was 0.1 mol/ι. The mixed solution was sprayed with an ultrasonic atomizer and carried into an electric furnace which was kept at 900∼1000$^{\circ}C$ and pyrolyzed. Pyrolyzed powders were collected on the glass filter with vacuum pump. Aqueous Mn solutiion was added into the synthesized powders, mixed with ultrasonic vibration and sintered at 1300∼1400$^{\circ}C$. Synthesized powders were characterized with SEM, XRD, DT-TGA, and BET. Microsture and resistivity of sintered body were investigated with SEM and multimeter. The results of this experiment were as follows; 1) Yittrium dooped BaTiO3 powders were synthesized above 950$^{\circ}C$. 2) The average particle sizes of powders from BET specific surface area and SEM were 0.045$\mu\textrm{m}$, 0.046$\mu\textrm{m}$ respectively. The particle size distribution was narrow in the range of 0.1∼1.0$\mu\textrm{m}$ from SEM. 3) Room temperature resistivity and pmax/pmin of 0.4 mol% Y doped specimen which was sintered at 1375$^{\circ}C$ were 102∼3 (Ω$.$cm) and 102∼3 respectively. 4) Room temperature resistivity and pmax/pmin of 0.4 mol% Y and 0.04 at% Mn added specimen which was sintered at 1375$^{\circ}C$ were 102∼3 (Ω$.$cm) and 106∼7 respectively. 5) Grain growth was inhibited with addition of Y2O3 and enhanced in addition of Mn by 0.05 atm%.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.183-189
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• 2004

Cuprous oxide (Cu$_2$O) thin films are cathodically deposited on Indium Tin Oxide (ITO) substrate. The as-deposited films were heat-treated at 30$0^{\circ}C$ to obtain Cu$_2$O. After the heat treatment, the film was changed from Cu metal into Cu$_2$O phase. The phase, morphology and photocurrent density of the films were dependent on the preparation conditions of deposition time, applied voltage, and the duration of heat treatment. The Cu$_2$O films were characterized by X-Ray Diffractometer (XRD) and Scanning Electron Microscope (SEM). The apparent grain size of the films formed by the normal method was larger than those grown by the pulse method. The CU$_2$O film what was deposited at -0.7 V for 300 sec and then, calcined at 30$0^{\circ}C$ for 1 h showed the predominant photocurrent density of 1048 $\mu$A/$\textrm{cm}^2$. And the stability of Cu$_2$O electrodes were improved with chemically deposited TiO$_2$ thin films on Cu$_2$O.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.111-116
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• 2000

700nm red emission(3F3longrightarrow3H6) in Tm3+ ion with 800 nm(3H6longrightarrow3H4) excitation via upconversion process has been reported only in host materials which have low phonon energies such as halide crystals. However, we observed 700nm and 480nm(1G4longrightarrow3H6) upconverted emission with 800nm excitation in several oxide glasses which has never reported. With spectroscopic analyses and lifetime measurements of each nergy level of Tm3+ ion doped in various oxide glasses, following mechanisms are suggested. For red upconversion, upconversion mechanism changed with Tm3+ concentration. While direct excitation up to 3F3 level via anti-Stokes excitation was dominated at low concentration, two-step excitation via 3H6longrightarrow3H4 and 3F4longrightarrow3F3 transitions was dominated at high concentration. For blue upconversion, two step excitation mechanism up to 1G4 level was suggested as follows : electrons are exciated up to 3H5 with direct excitation with pumping light up to 3H4 followed by multiphonon relaxation, and then additional reabsorption of pumping light excites electrons up to 1G4.

• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1165-1169
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• 2003

The Ta$_2$O$_{5}$ thin film was deposited on Si-(III) and glass substrate with the change of Ar:O$_2$ gas flow rate in the assist ion gun by the Dual ion-Beam Sputtering (DIBS). As the $O_2$ gas flow of the assist ion gun was decreased, the deposition rate of the thin films decreased. The refractive index was fixed (2.11, at 1550 nm) without regarding to $O_2$ gas flow of the range 3∼12 sccm in assist ion gun. The condition of Ar:O$_2$=3:12 was formatted stoichiometry composition of Ta$_2$O$_{5}$ and the ms roughness was small (0.183 nm).

• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1197-1201
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• 2003

Thin film on SiO$_2$ glass was synthesized by a dip-coating method from the ZrO$_2$ sol which had dispersed nanosize Au particle under ambient atmosphere. After heat treatment of the prepared thin film, the characteristics were investigated by X-ray diffraction, UV-VIS spectrometer, Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). It was found that ZrO$_2$ thin film with 100 nm thickness was crystallized to tetragonal phase at 50$0^{\circ}C$. The size of dispersed Au particle was 15∼40nm and the film had a smooth surface with a roughness of 0.84 nm. The film showed nonlinearity characteristics with absorption peaks at 630∼670nm visible region because of the plasma resonance of Au metallic particles.

• Korean Journal of Materials Research
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• v.12 no.4
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• pp.296-303
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• 2002

For potential application to quantum mechanical devices, nano-composite thin films, consisting of GaAs quantum dots dispersed in SiO$_2$ glass matrix, were fabricated and studied in terms of structural, chemical, and optical properties. In order to form crystalline GaAs quantum dots at room temperature, uniformly dispersed in $SiO_2$matrix, the composite films were made to consist of alternating layers of GaAs and $SiO_2$in the manner of a superlattice using RF magnetron sputter deposition. Among different film samples, nominal thickness of an individual GaAs layer was varied with a total GaAs volume fraction fixed. From images of High Resolution Transmission Electron Microscopy (HRTEM), the formation of GaAs quantum dots on SiO$_2$was shown to depend on GaAs nominal thickness. GaAs deposits were crystalline and GaAs compound-like chemically according to HRTEM and XPS analysis, respectively. From measurement of optical absorbance using a spectrophotometer, absorption edges were determined and compared among composite films of varying GaAs nominal thicknesses. A progressively larger shift of absorption edge was noticed toward a blue wavelength with decreasing GaAs nominal thickness, i.e. quantum dots size. Band gaps of the composite films were also determined from Tauc plots as well as from PL measurements, displaying a linear decrease with increasing GaAs nominal thickness.

• The Journal of Advanced Prosthodontics
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• v.8 no.6
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• pp.479-488
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• 2016

PURPOSE. The aim of this study was to test the modulus of elasticity (E) across the interfaces of yttria stabilized zirconia (YTZP) / veneer multilayers using nanoindentation. MATERIALS AND METHODS. YTZP core material (KaVo-Everest, Germany) specimens were either coated with a liner (IPS e.max ZirLiner, Ivoclar-Vivadent) (Type-1) or left as-sintered (Type-2) and subsequently veneered with a pressable glass-ceramic (IPS e.max ZirPress, Ivoclar-Vivadent). A $5{\mu}m$ (nominal tip diameter) spherical indenter was used with a UMIS CSIRO 2000 (ASI, Canberra, Australia) nanoindenter system to test E across the exposed and polished interfaces of both specimen types. The multiple point load - partial unload method was used for E determination. All materials used were characterized using Scanning Electron Microscopy (SEM) and X - ray powder diffraction (XRD). E mappings of the areas tested were produced from the nanoindentation data. RESULTS. A significantly (P<.05) lower E value between Type-1 and Type-2 specimens at a distance of $40{\mu}m$ in the veneer material was associated with the liner. XRD and SEM characterization of the zirconia sample showed a fine grained bulk tetragonal phase. IPS e-max ZirPress and IPS e-max ZirLiner materials were characterized as amorphous. CONCLUSION. The liner between the YTZP core and the heat pressed veneer may act as a weak link in this dental multilayer due to its significantly (P<.05) lower E. The present study has shown nanoindentation using spherical indentation and the multiple point load - partial unload method to be reliable predictors of E and useful evaluation tools for layered dental ceramic interfaces.

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.24-29
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• 2004

Nanocomposite of Te doped $SiO_2$ films was prepared for the new functional materials like non-linear optic materials, selective absorption and transmission films. The effects of particle size and morphology with different hydrolysis conditions on the properties were examined with TGA/DTA. XRD. UV-spectrometer, SPM, SEM and EDS. It was found that Te/$SiO_2$ films showed high absorption peak at 550nm visible region by plasma resonance of Te fine particles. The Rm surface roughness of the films was about 2.5 nm and the size of Te particles was 5~10nm.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.362-366
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• 2014

Dye-sensitized solar cells (DSSCs) were synthesized using a $0.25cm^2$ area of a $TiO_2$ nanoparticle layer as the electrode and platinum (Pt) as the counter electrode. The $TiO_2$ nanoparticle layers (12 to 22 ${\mu}m$) were screen-printed on fluorine-doped tin oxide glass. Glancing angle X-ray diffraction results indicated that the $TiO_2$ layer is composed of pure anatase with no traces of rutile $TiO_2$. The Pt counter electrode and the ruthenium dye anchored $TiO_2$ electrode were then assembled. The best photovoltaic performance of DSSC, which consists of a $18{\mu}m$ thick $TiO_2$ nanoparticle layer, was observed at a short circuit current density ($J_{sc}$) of $14.68mA{\cdot}cm^{-2}$, an open circuit voltage ($V_{oc}$) of 0.72V, a fill factor (FF) of 63.0%, and an energy conversion efficiency (${\eta}$) of 6.65%. It can be concluded that the electrode thickness is attributed to the energy conversion efficiency of DSSCs.