• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.1891-1895
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• 2003

Switch-mode power supplies (SMPS) have become a major source of conducted electromagnetic interference (EMI) which is the combination between differential mode (DM) noise and common mode (CM) noise. This paper presents the conducted EMI reduction approach in flyback switched mode power supply by rerouting for circuit balance to reduce common mode noise. And differential mode noise can be reduce by adding $c_x$ capacitor across the input power line, and passive element to the gate drive of switching device MOSFET to slow down the switching times. This combination of our approach is the effective way to reduce the conducted EMI and it is also a cost effective for product design

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 학술대회지
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• pp.801-803
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• 2004

The current drive in an MOSFET is limited by the intrinsic channel resistance. All the other parasitic elements in a device structure playa significant role and degrade the device performance. These other resistances need to be less than $10{\%}-20{\%}$ of the channel resistance. To achieve the requirements, we should investigate the methodology of separation and quantification of those resistances. In this paper, we developed the extraction method of resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that forms under the gate in the tail region of the extension profile. This resistance is strongly affected by the abruptness of the extension profile because the steeper the profile is, the shorter this accumulation region will be.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2013년도 추계학술대회 논문집
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• pp.153-154
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• 2013

본 논문에서는 Boost 컨버터와 Push-pull 컨버터로 구성되어 가격 경쟁력 향상 및 안정적으로 출력 전압 제어가 가능한 게이트 드라이버용 DC-DC 컨버터를 제안한다. 제안된 DC-DC 컨버터는 항상 최상의 성능으로 동작하는 전기 자동차용 인버터를 구현하기 위해 전기 자동차의 열악한 동작 환경에 상관없이 안정적인 On/Off 전압을 공급한다. 제안된 DC-DC 컨버터는 80kW 전기 자동차 개발을 위해 제작된 인버터를 통하여 성능을 검증하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 A
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• pp.464-466
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• 1996

IGBT devices have the best features of both power MOSFETs and power bipolar transistors, i.e., efficient voltage gate drive requirements and high current density capability. When designing circuit and systems that utilize IGSTs or other power semiconductor devices, circuit simulations are needed to examine how the devices affect the behavior of the circuit. The IGBT model in this paper is verified by comparing the results of the model with experimented results for various circuit operating conditions. The model performs well and describes experimented results accurately for the range of static and dynamic condition in which the device is intended to be operated.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1996년도 창립기념 전력전자학술발표회 논문집
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• pp.63-66
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• 1996

An micro model for the power insulated Gate Bipolar Transistor(IGBT) is developed. The model consistently described the IGBT steady-state current-voltage characteristics and switching transient current and voltage waveform for all loading conditions. The model is based on the equivalent circuit of a MOSFET with supplies the base current to a low-gain, high-level injection, bipolar transistor with its base virtual contact at the collector and of the base. Model results are compared with measured turn-on and turn-off waveform for different drive, load, and feedback circuits.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 A
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• pp.562-564
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• 1994

IGBT devices have the best features of both power MOSFETs and power bipolar transistors, i. e., efficient voltage gate drive requirements and high current density capability. The interaction of the IGBT with the load circuit can be described using the device model and the state equation of the load circuit. The protection circuit requirements are unique for the IGBT and can be examined using the model.

• 한국정보통신설비학회:학술대회논문집
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• 한국정보통신설비학회 2007년도 학술대회
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• pp.11-14
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• 2007

CMOS technology 기반의 고주파 직접회로에서는 충분한 이득과 안정성을 얻기 위하여 inductor, capacitor와 같은 수동 소자를 적절히 사용하여 설계하여야 한다. 이와 같은 수동 소자는 CMOS 집적회로에서 넓은 면적을 차지하는 단점이 있다. 고주파 증폭기의 부하를 능동 소자로 대체하게 되면 작은 크기로 회로의 제작이 가능하게 되나, 능동 소자는 수동 소자에 비하여 선형 특성이 좋지 않기 때문에 실제로 고주파 증폭기 설계에 사용하지 않는다. 본 논문에서는 이와 같은 능동 소자의 비선형성을 억제하면서, 동시에 회로의 크기를 줄일 수 있는 기능성 능동 부하를 적용한 고주파 증폭기를 설계하였다. 기능성 능동 부하는 2개의 MOSFET은 대칭으로 연결된 구조를 가지며, 하나의 MOSFET은 일반적인 load로 동작하며, 다른 MOSFET은 gate에 가변 전압을 인가함으로써, 증폭기의 전달함수를 변화시킬 수 있다. 이와 같은 특성을 이용하여 고주파 증폭기의 선형성을 보상할 수가 있다.

• Journal of Power Electronics
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• 제18권4호
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• pp.985-996
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• 2018

The implementation and performance evaluation of an interleaved boundary conduction mode (BCM) boost power factor correction (PFC) converter is presented in this paper by employing three wide band-gap switching devices: a super junction silicon (Si) MOSFET, a silicon carbide (SiC) MOSFET and a gallium nitride (GaN) high electron mobility transistor (HEMT). The practical considerations for adopting wide band-gap switching devices to BCM boost PFC converters are also addressed. These considerations include the gate drive circuit design and the PCB layout technique for the reliable and efficient operation of a GaN HEMT. In this paper it will be shown that the GaN HEMT exhibits the superior switching characteristics and pronounces its merits at high-frequency operations. The efficiency improvement with the GaN HEMT and its application potentials for high power density/low profile BCM boost PFC converters are demonstrated.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.985-987
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• 1992

The three-phase full(6-pulse) bridge controlled rectifier is one of the most widely used types of solid-state converters in DC drive applications for higher performance. In most of the previous designs gate control circuits of the converter have been designed with analog method, whitch can be easily affected by noise. In this study microprocessor and pheripal LSIs are used for eliminating these problems and successful results have been obtained.

• 조명전기설비학회논문지
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• 제12권3호
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• pp.37-44
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• 1998

본 논문에서는 분산전원 장치에 사용되는 증첩형 액티브클램프 ZVS 포워드 컨버터와 ZVS 하프 브리지(Half bbridge) 컨버터의 동작특성과 효율을 비교하였다. 또한 중첩형 액티브클램프 ZVS 포워드 컨버터의 전류모드 제어회로 설계 방법을 제시하였고, 게이트 구동회로를 간단히 하기 위해 N-P M OSFETs 로 조합된 액티브클램프 기법을 제안하여 50~100% 부하 범위에서 약 90%의 효율을 얻을 수 있었다.