Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1994.07a
- /
- Pages.562-564
- /
- 1994
Micro IGBT Device Modeling and Circuit Simulation
미시적인 IGBT 소자 모델링과 회로동작 시뮬레이션
- Seo, Young-Soo (Myong-Ji University) ;
-
Baek, Dong-Hyun
(Kyung Won Junior College)
;
- Lim, Young-Bae (Chung Nam Junior College) ;
-
Kim, Young-Chun
(Myong-Ji University)
;
- Cho, Moon-Taek (Myong-Ji University) ;
- Seo, Soo-Ho (Myong-Ji University)
- 서영수 (명지대학교 공과대학 전기공학과) ;
-
백동현
(경원전문대학)
;
- 임영배 (충남전문대학 전기과) ;
-
김영춘
(명지대학교 공과대학 전기공학과)
;
- 조문택 (명지대학교 공과대학 전기공학과) ;
- 서수호 (명지대학교 공과대학 전기공학과)
- Published : 1994.07.21
Abstract
IGBT devices have the best features of both power MOSFETs and power bipolar transistors, i. e., efficient voltage gate drive requirements and high current density capability. The interaction of the IGBT with the load circuit can be described using the device model and the state equation of the load circuit. The protection circuit requirements are unique for the IGBT and can be examined using the model.
Keywords