• ETRI Journal
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• 제31권5호
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• pp.604-606
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• 2009

The primary dose effects on an insulated gate bipolar transistor (IGBT) irradiated with a $^{60}Co$ gamma-ray source are found in both of the components of the threshold shifting due to oxide charge trapping in the MOS and the reduction of current gain in the bipolar transistor. In this letter, the IGBT macro-model incorporating irradiation is implemented, and the electrical characteristics are analyzed by SPICE simulation and experiments. In addition, the collector current characteristics as a function of gate emitter voltage, VGE, are compared with the model considering the radiation damage of different doses under positive biases.

• Nuclear Engineering and Technology
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• 제54권9호
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• pp.3398-3402
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• 2022

We fabricated a 15 m long position-sensitive plastic scintillation optical fiber (PSOF) detector consisting of a PSOF, two photomultiplier tubes, four fast amplifiers, and a digitizer. A single PSOF was used as a sensing part to estimate the gamma-ray source position, and ¹³⁷Cs, an uncollimated solid-disk-type radioactive isotope, was used as a gamma-ray emitter. To improve the sensitivity, accuracy, and measurement time of a PSOF detector compared to those of previous studies, the performance of the amplifier was optimized, and the digital signal processing (DSP) was newly designed in this study. Moreover, we could measure very low dose rates of gamma-rays with high sensitivity and accuracy in a very short time using our proposed PSOF detector. The results of this study indicate that it is possible to accurately and quickly locate the position of a very low dose rate gamma-ray source in a wide range of contaminated areas using the proposed position-sensitive PSOF detector.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 학술대회 논문집 정보 및 제어부문
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• pp.165-168
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• 2008

The experimental results of exposing IGBT (Insulated Gate Bipolar Transistor) samples to gamma radiation source show shifting of threshold voltages in the MOSFET and degradation of carrier mobility and current gains. At low total dose rate, the shift of threshold voltage is the major contribution of current increases, but for more than some total dose, the current is increased because of the current gain degradation occurred in the vertical PNP at the output of the IGBTs. In the paper, the collector current characteristics as a function of gate emitter voltage (VGE) curves are tested and analyzed with the model considering the radiation damage on the devices for gate bias and different dose. In addition, the model parameters between simulations and experiments are found and studied.

• 전자공학회논문지SC
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• 제46권2호
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• pp.1-6
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• 2009

금속 산화막 반도체 전계효과 트랜지스터(MOSFET)와 트랜지스터(Transistor)와 접합형으로 구성된 절연 게이트 양극성 트랜지스터(IGBT)의 게이트바이어스 상태에서 감마방사선을 조사하면 전기적특성에서 문턱전압과 전류이득의 감소가 발생한다. 저선량과 고선량에서 문턱전압의 이동은 전류의 증감에 따라 변화한다. 본 논문에서 콜렉터전류는 게이트와 에미터간의 전압으로 구동되는데 게이트 바이어스 전압과 조사량에 따라 실험하고 전기적 특성을 분석한다. 그리고 IGBT를 설계하는데 필요한 모델파라미터를 구하고 연구하는데 있다.

• 전자공학회논문지D
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• 제36D권3호
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• pp.66-74
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• 1999

HMC(Hybrid Monte Carlo)시뮬레이션을 이용하여 InAlGaAs/InGaAs HBT의 비평형 고속전송을 해석하였고, 전송시간 및 차단주파수를 향상시키기 위하여 에미터-베이터 이종접합과 콜렉터 구조를 최적 설계 하였다. 시뮬레이션 결과, 에미터 조성경사영역에서 Al 몰비를 xf=1.0에서 xf=0.5로 변화시킬 경우 베이스 전송시간이τb=0.21ps로 가장 짧았다. 콜렉터 전송시간을 단축시킬 목적으로 콜렉터와 베이스 사이에 n\sup +\형 (콜렉터-Ⅰ), I형(콜렉터-Ⅱ), p형(콜렉터-Ⅲ), 콜렉터를 삽입하여 베이스-콜렉터 공간전하영역의 전계분포를 전자의 비평형고속전송을 유지하도록 설계하였다. 콜렉터-Ⅲ 구조에서는 전자의 음이온화된 억셉터가 콜렉터의 전계를 감소시킴으로써 전자가 Γ 밸리에서 먼 거리까지 전송을 가능하게 하여 가장 짧은 콜렉터 전송시간을 나타내었다. 결론적으로 가장 짧은 전송시간 τec는 Al 몰비가 xf=0.5인 에미터 구조와 콜렉터-Ⅲ에서 0.87psec이었고, 차단주파수 ft=183GHz를 나타내었다.

• 한국의학물리학회:학술대회논문집
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• 한국의학물리학회 2002년도 Proceedings
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• pp.195-198
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• 2002

A positron camera, consisting of a pair of Anger-type scintillation detectors, has been developed for verifying the ranges of irradiation beams in heavy-ion radiotherapy. Images obtained by a centroid calculation of photomultiplier outputs exhibit a distortion near the edge of the crystal plane in an Anger-type scintillation detector. The images of a $\^$68/Ge line source were detected and look-up tables were prepared for the position correction parameters. Asymmetry of the position distribution detected by the positron camera was prevented with this correction. As a result, a linear position response and a position resolution of 8.6 mm were obtained over a wide measurement field.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권6호
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• pp.601-607
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• 2015

A set of novel silicon controlled rectifier (SCR) devices' characteristics have been analyzed and verified under the electrostatic discharge (ESD) stress. A ring-shaped diffusion was added to their anode or cathode in order to improve the holding voltage (Vh) of SCR structure by creating new current discharging path and decreasing the emitter injection efficiency (${\gamma}$) of parasitic Bipolar Junction Transistor (BJT). ESD current density distribution imitated by 2-dimensional (2D) TCAD simulation demonstrated that an additional current path exists in the proposed SCR. All the related devices were investigated and characterized based on transmission line pulse (TLP) test system in a standard $0.5-{\mu}m$ 24 V CDMOS process. The proposed SCR devices with ring-shaped anode (RASCR) and ring-shaped cathode (RCSCR) own higher Vh than that of Simple SCR (S_SCR). Especially, the Vh of RCSCR has been raised above 33 V. What's more, their holding current is kept over 800 mA, which makes it possible to design power clamp with SCR structure for on chip ESD protection and keep the protected chip away from latch-up risk.

• Nuclear Engineering and Technology
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• 제50권1호
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• pp.165-169
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• 2018

An assessment for determining N-16 activity concentrations during the operation condition of Bangladesh Atomic Energy Commission TRIGA Research Reactor was performed employing several governing equations. The radionuclide N-16 is a high energy (6.13 MeV) gamma emitter which is predominately created by the fast neutron interaction with O-16 present in the reactor core water. During reactor operation at different power level, the concentration of N-16 at the reactor bay region may increase causing radiation risk to the reactor operating personnel or the general public. Concerning the safety of the research reactor, the present study deals with the estimation of N-16 activity concentrations in the regions of reactor core, reactor tank, and reactor bay at different reactor power levels under natural convection cooling mode. The estimated N-16 activity concentration values with 500 kW reactor power at the reactor core region was $7.40{\times}10^5Bq/cm^3$ and at the bay region was $3.39{\times}10^5Bq/cm^3$. At 3 MW reactor power with active forced convection cooling mode, the N-16 activity concentration in the decay tank exit water was also determined, and the value was $4.14{\times}10^{-1}Bq/cm^3$.

• 디지털융복합연구
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• 제10권11호
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• pp.449-457
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• 2012

본 연구의 목적은 PET/CT 검사시 공간선량을 측정 비교함으로써 방사선 발생원과 종사자간 선량의 상관관계를 규명하고 효율적인 관리를 통해 피폭선량을 감소시키는데 있다. 최근 PET/CT 검사의 증가는 동위원소 사용량의 증가와 더불어 종사자의 피폭 증가의 원인이 되고 있다. 따라서 각 방사선 발생원에서의 공간선량을 비교 분석하고 개인방호복과 차폐체 사용에 관한 연구를 수행하였다. 양전자 방출핵종인 $^{18}F$ 방출 감마선 고에너지(511 keV)에서 개인방호복(0.5 mm pb) 사용은 미사용 시 보다 더 많은 피폭을 초래함을 확인하였다.

• 대한방사선치료학회지
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• 제6권1호
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• pp.56-60
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• 1994

In the past, brachytherapy was carried out mostly with radium or radon sources. Currently. use of artificially produced radionuclially produced radionuclides such as $^{137}Cs,\;^{192}Ir,\;^{198}Au,\;and\;^{125}I$ is rapidly increasing. Although electrons are often used as an alternative to interstitial implants, brachytherapy continues to remain an important mode of therapy, either alone or combined with external beam. The National Council on Radiation Protection and Measurements(NCRP) recommends that the strength of any ${\gamma}$ emitter should be specified directly in terms of exposure rate in air at a specified distance such as 1m. The air kerma strength is defined as the product of air kerma rate in 'free space' and the square of the disrance of the calibration point from the source center along the perpendicular bisector, i. e., $S_k=K_L{\times}L^2$. Where $S_K$ is the the air kerma strength and K is the air kerma rate at a specified distance L. (usually 1m). Recommended units for all kerma strength are ${\mu}Gym^{2}h^{-1}$.