• ETRI Journal
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• v.31 no.5
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• pp.604-606
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• 2009

The primary dose effects on an insulated gate bipolar transistor (IGBT) irradiated with a $^{60}Co$ gamma-ray source are found in both of the components of the threshold shifting due to oxide charge trapping in the MOS and the reduction of current gain in the bipolar transistor. In this letter, the IGBT macro-model incorporating irradiation is implemented, and the electrical characteristics are analyzed by SPICE simulation and experiments. In addition, the collector current characteristics as a function of gate emitter voltage, VGE, are compared with the model considering the radiation damage of different doses under positive biases.

• Nuclear Engineering and Technology
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• v.54 no.9
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• pp.3398-3402
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• 2022

We fabricated a 15 m long position-sensitive plastic scintillation optical fiber (PSOF) detector consisting of a PSOF, two photomultiplier tubes, four fast amplifiers, and a digitizer. A single PSOF was used as a sensing part to estimate the gamma-ray source position, and ¹³⁷Cs, an uncollimated solid-disk-type radioactive isotope, was used as a gamma-ray emitter. To improve the sensitivity, accuracy, and measurement time of a PSOF detector compared to those of previous studies, the performance of the amplifier was optimized, and the digital signal processing (DSP) was newly designed in this study. Moreover, we could measure very low dose rates of gamma-rays with high sensitivity and accuracy in a very short time using our proposed PSOF detector. The results of this study indicate that it is possible to accurately and quickly locate the position of a very low dose rate gamma-ray source in a wide range of contaminated areas using the proposed position-sensitive PSOF detector.

• Proceedings of the KIEE Conference
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• 2008.10b
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• pp.165-168
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• 2008

The experimental results of exposing IGBT (Insulated Gate Bipolar Transistor) samples to gamma radiation source show shifting of threshold voltages in the MOSFET and degradation of carrier mobility and current gains. At low total dose rate, the shift of threshold voltage is the major contribution of current increases, but for more than some total dose, the current is increased because of the current gain degradation occurred in the vertical PNP at the output of the IGBTs. In the paper, the collector current characteristics as a function of gate emitter voltage (VGE) curves are tested and analyzed with the model considering the radiation damage on the devices for gate bias and different dose. In addition, the model parameters between simulations and experiments are found and studied.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.46 no.2
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• pp.1-6
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• 2009

The experimental results of exposing IGBT (Insulated Gate Bipolar Transistor) samples to gamma radiation source show shifting of threshold voltages in the MOSFET and degradation of carrier mobility and current gains. At low total dose rate, the shift of threshold voltage is the major contribution of current increases, but for more than some total dose, the current is increased because of the current gain degradation occurred in the vertical PNP at the output of the IGBTs. In the paper, the collector current characteristics as a function of gate emitter voltage (VGE) curves are tested and analyzed with the model considering the radiation damage on the devices for gate bias and different dose. In addition, the model parameters between simulations and experiments are found and studied.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.66-74
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• 1999

InAlGaAs/InGaAs HBTs with the various emitter junction gradings(xf=0.0-1.0) and the modified collector structures (collector- I;n-p-n, collector-II;i-p-n) are simulated and analyzed by HMC (Hybrid Monte Carlo) method in order to find an optimum structure for the shortest transit time. A minimum base transit time($ au$b) of 0.21ps was obtainsed for HBT with the grading layer, which is parabolically graded from $x_f$=1.0 and xf=0.5 at the emitter-base interface. The minimum collector transit time($\tau$c) of 0.31ps was found when the collector was modified by inserting p-p-n layers, because p layer makes it possible to relax the electric field in the i-type collector layer, confining the electrons in the $\Gamma$-valley during transporting across the collector. Thus InAlGaAs/InGaAs HBT in combination with the emitter grading($x_f$=0.5) and the modified collector-III showed the transit times of 0.87 psec and the cut-off frequency (f$\tau$) of 183 GHz.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.195-198
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• 2002

A positron camera, consisting of a pair of Anger-type scintillation detectors, has been developed for verifying the ranges of irradiation beams in heavy-ion radiotherapy. Images obtained by a centroid calculation of photomultiplier outputs exhibit a distortion near the edge of the crystal plane in an Anger-type scintillation detector. The images of a $\^$68/Ge line source were detected and look-up tables were prepared for the position correction parameters. Asymmetry of the position distribution detected by the positron camera was prevented with this correction. As a result, a linear position response and a position resolution of 8.6 mm were obtained over a wide measurement field.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.601-607
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• 2015

A set of novel silicon controlled rectifier (SCR) devices' characteristics have been analyzed and verified under the electrostatic discharge (ESD) stress. A ring-shaped diffusion was added to their anode or cathode in order to improve the holding voltage (Vh) of SCR structure by creating new current discharging path and decreasing the emitter injection efficiency (${\gamma}$) of parasitic Bipolar Junction Transistor (BJT). ESD current density distribution imitated by 2-dimensional (2D) TCAD simulation demonstrated that an additional current path exists in the proposed SCR. All the related devices were investigated and characterized based on transmission line pulse (TLP) test system in a standard $0.5-{\mu}m$ 24 V CDMOS process. The proposed SCR devices with ring-shaped anode (RASCR) and ring-shaped cathode (RCSCR) own higher Vh than that of Simple SCR (S_SCR). Especially, the Vh of RCSCR has been raised above 33 V. What's more, their holding current is kept over 800 mA, which makes it possible to design power clamp with SCR structure for on chip ESD protection and keep the protected chip away from latch-up risk.

• Nuclear Engineering and Technology
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• v.50 no.1
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• pp.165-169
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• 2018

An assessment for determining N-16 activity concentrations during the operation condition of Bangladesh Atomic Energy Commission TRIGA Research Reactor was performed employing several governing equations. The radionuclide N-16 is a high energy (6.13 MeV) gamma emitter which is predominately created by the fast neutron interaction with O-16 present in the reactor core water. During reactor operation at different power level, the concentration of N-16 at the reactor bay region may increase causing radiation risk to the reactor operating personnel or the general public. Concerning the safety of the research reactor, the present study deals with the estimation of N-16 activity concentrations in the regions of reactor core, reactor tank, and reactor bay at different reactor power levels under natural convection cooling mode. The estimated N-16 activity concentration values with 500 kW reactor power at the reactor core region was $7.40{\times}10^5Bq/cm^3$ and at the bay region was $3.39{\times}10^5Bq/cm^3$. At 3 MW reactor power with active forced convection cooling mode, the N-16 activity concentration in the decay tank exit water was also determined, and the value was $4.14{\times}10^{-1}Bq/cm^3$.

• Journal of Digital Convergence
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• v.10 no.11
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• pp.449-457
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• 2012

The purpose of this study is to investigate the relationship between radiation origin and health professionals, and to reduce exposed dose of radiation through efficient management. Increasing exposed dose of radiation to health professionals are caused by the increase of PET/CT use and a radioactive isotope. Hence, in this study, space dose from each origin of radiation generating was analyzed and the use of personnel protective clothing and shields was compared. As a result of this study, we confirmed that the exposed dose of radiation was much higher in case of wearing personnel protective clothing(0.5 mm pb) than no wearing personnel protective clothing under high energy gamma radiation(511 keV) of the position emitter($^{18}F$).

• The Journal of Korean Society for Radiation Therapy
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• v.6 no.1
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• pp.56-60
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• 1994

In the past, brachytherapy was carried out mostly with radium or radon sources. Currently. use of artificially produced radionuclially produced radionuclides such as $^{137}Cs,\;^{192}Ir,\;^{198}Au,\;and\;^{125}I$ is rapidly increasing. Although electrons are often used as an alternative to interstitial implants, brachytherapy continues to remain an important mode of therapy, either alone or combined with external beam. The National Council on Radiation Protection and Measurements(NCRP) recommends that the strength of any ${\gamma}$ emitter should be specified directly in terms of exposure rate in air at a specified distance such as 1m. The air kerma strength is defined as the product of air kerma rate in 'free space' and the square of the disrance of the calibration point from the source center along the perpendicular bisector, i. e., $S_k=K_L{\times}L^2$. Where $S_K$ is the the air kerma strength and K is the air kerma rate at a specified distance L. (usually 1m). Recommended units for all kerma strength are ${\mu}Gym^{2}h^{-1}$.