• 한국정밀공학회지
• /
• 제13권8호
• /
• pp.72-79
• /
• 1996

In a BAF(Batch Annealing Furnace), various studies have been pursued in order to reduce energy consumption rate to improve productivity and to stabilize the properties of products. The purpose of this study was to investigate the effects of both the atmospheric gas and convector plate shapes on the augmentation of heat transfer. The use of hydrogen instead of nitrogen as an atmospheric gas, combined with high convection in the BAF, has shown that considerable increases in furnace out put and significantly improved material quality are attainable. Because convector plate shapes make the atmosheric gas easily flow density, high diffusivity and reducing character of hydrogen, a better heat transfer rates resulting in uniform material temperature distribution and improved coil surface quality can be achieved. Also, it was found that the closed convector plate took more time for the annealing cycle time than the other plate type(open-type)by about ten hours.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.113-114
• /
• 2008

Conventional furnace annealing (CFA) for activating Mg-doped p-type GaN films had been performed in pure $N_2$ ambient. All sample activated the same gas ambient. The annealing process change temperature: the first process is performed at $550^{\circ}C$ for 10 min. but, the first process is the same bulk. From second to five process increase activation temperature to change $50^{\circ}C$ and annealing time keeping for 10 min. It is found that the samples characteristic measure hall measurement. Similar results were also evidenced by photoluminescence (PL) measurement.

• 한국정밀공학회지
• /
• 제13권2호
• /
• pp.159-167
• /
• 1996

The effect of atmospheric gas on the surface cleanliness in the batch annealing furnace(BAF) is presented. It is very important to improve the surface cleanliness to investigate the surface defects such as carbon contamination, smudge and yellow color phenomenon on the surface of steel sheet. In order to study the occurrence of surface defects of steel sheet, the annealing operations were carried out in the H2 BAF with 75% hydrogen and conventional BAF with 4% hydrogen. The hydrogen is important factor that affect the energy saving in the entire annealing cycle and the surface cleanliness. In the conventional BAF, it shows that to protect the yellow color phenomenon the proper finish temperature is $80^{\circ}C$ and in the smudge sample the oxidized thickness has the depth of $120{\AA}$.

• 전자공학회논문지D
• /
• 제35D권7호
• /
• pp.94-101
• /
• 1998

To form 0.2 .mu.m p$^{+}$-n junctions, BF$_{2}$ ions with the energy of 20keV and the dose of 2*10$^{15}$ cm$^{-2}$ were implanted into the crystalline and preamorphized silicon substrates. Th epreamorphization was performed using 45keV, 3*10$^{14}$ cm$^{-2}$ As or Ge ions. Th efurnace annealing and rapid thermal annealing were empolyed to annihilate the implanted damage and to activate the implanted boron ions.The junction properties were analyzed with the measured values of the junction depth, sheet resistances, residual defects, and leakage currents. The thermal cycle of furnace annela followed by rapid thermal annela shows better characteristics than the annealing sequence of rapid thermal anneal and furnace annela.Among the premorphization species, Ge ion exhibited the better characteristics than the As ion.n.

• 한국전기전자재료학회논문지
• /
• 제28권9호
• /
• pp.598-601
• /
• 2015

The $Sr_{0.7}Bi_{2.3}Nb_2O_9(SBN)$ thin films are deposited on Pt electrode($Pt/Ti/SiO_2/Si$) using RF sputtering method at various deposition temperature. The deposition temperature of optimum was $300^{\circ}C$. SBN thin films were annealed at $500{\sim}700^{\circ}C$ using furnace and RTA, respectively. The surface roughness showed about 2.42 nm in annealing temperature($600^{\circ}C$) of furnace. The capacitance density of SBN thin films were increased with the increase of annealing temperature. The maximum capacitance density of $0.7{\mu}F/cm^2$ was obtained by annealing temperature($700^{\circ}C$). The frequency dependence of dielectric loss showed about 0.03 in frequency ranges of 1~1,000 kHz.

• 한국재료학회지
• /
• 제34권2호
• /
• pp.79-84
• /
• 2024

Thin films of yttria-stabilized zirconia (YSZ) nanoparticles were prepared using a low-temperature deposition and crystallization process involving successive ionic layer adsorption and reaction (SILAR) or SILAR-Air spray Plus (SILAR-A+) methods, coupled with hydrothermal (175 ℃) and furnace (500 ℃) post-annealing. The annealed YSZ films resulted in crystalline products, and their phases of monoclinic, tetragonal, and cubic were categorized through X-ray diffraction analysis. The morphologies of the as-prepared films, fabricated by SILAR and SILAR-A+ processes, including hydrothermal dehydration and annealing, were characterized by the degree of surface cracking using scanning electron microscopy images. Additionally, the thicknesses of the YSZ thin films were compared by removing diffusion layers such as spectator anions and water accumulated during the air spray plus process. Crack-free YSZ thin films were successfully fabricated on glass substrates using the SILAR-A+ method, followed by hydrothermal and furnace annealing, making them suitable for application in solid oxide fuel cells.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.10-11
• /
• 2006

In this study, the Ni/Co/TiN (6/2/25 nm) structure was deposited for thermal stability estimation. Vacuum (30 mTorrs) annealing was carried out to compare with furnace annealing in nitrogen ambient. The proposed Ni/Co/TiN structure exhibited low temperature silicidation and wide range of rapid thermal process (RTP) windows. The sheet resistance was too high to measure after furnace annealing at $600^{\circ}C$ due to the thin thickness (15 nm) of the nickel silicide. However, the sheet resistance maintained stable characteristics up to $600^{\circ}C$ for 30 min after vacuum annealing. Therefore, the low resistance of thin film nickel silicide was obtained by vacuum annealing at $600^{\circ}C$.

• 대한전자공학회논문지TE
• /
• 제39권1호
• /
• pp.31-36
• /
• 2002

낮은 에너지의 보론 이온을 선비정질화된 실리콘 기판과 단결정 기판에 이온 주입하여 0.2μm 정도의 접합 깊이를 갖는 박막의 P/sup +/-n 접합을 형성하였다 이온주입에 의한 결정결함의 제거 및 주입된 보론 이온의 활성화를 위해 급속 열처리기를 이용하였으며, BPSC(bore-phosphosilicate glass)를 흐르도록 하기 위해 노 열처리를 도입하였다. 선비정질화 이온주입은 45keV, 3×10/sup 14/cm/sup -2/ Ge 이온을 사용하였으며, p형 불순물로는 BF2 이온을 20keV, 2×10/sup 15/cm /sup -2/로 이온주입 하였다. 급속 열처리와 노 열처리 조건은 각각 1000。C/ 10초와 850。C/4O분이었다. 형성된 접합의 접합깊이는 SIMS와 ASR로 측정하였으며, 4-point probe로 면 저항을 측정하였다. 또한 전기적인 특성은 다이오드에 역방향 전압을 인가하여 측정된 누설전류로 분석하였다. 측정 결과를 살펴보면, 급속 열처리만을 수행하여도 양호한 접합 특성을 나타내나, 급속 열처리와 노 열처리를 함께 고려해야 할 경우에는 노 열처리 후에 급속 열처리를 수행하는 공정이 급속 열처리 후에 노 열처리를 수행하는 경우보다 더 우수한 박막 접합 특성을 나타내었다.

• 실천공학교육논문지
• /
• 제10권2호
• /
• pp.125-129
• /
• 2018

이 논문은 LTP 퍼니스의 최적화 된 내부 유동과 온도의 균일성에 대한 수치 해석에 관한 것이다. 반도체 제조 공정에서 실리콘 웨이퍼를 어닐링하기 위한 기능을 수행한다. 특히 챔버 내부의 최고 온도를 약 $400^{\circ}C$의 고온으로 유지하여 웨이퍼를 보강한다. 공정이 고온에서 완료되면 열 교환기를 통해 온도를 낮추고 이를 수행하기 위한 작업이 반복된다. 이 논문에서 최종적인 목표는 LTPS 퍼니스의 유동 해석을 통해 챔버의 단열 공급과 배기 구조의 최적 설계를 도출하는 것과 교육과정 개발을 위한 사례 발굴에 있다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.322-322
• /
• 2010

For boron doping on n-type silicon wafer, around $1,000^{\circ}C$ doping temperature is required, because of the relatively low solubility of boron in a crystalline silicon comparing to the phosphorus case. Boron doping by fiber laser annealing and lamp furnace heat treatment were carried out for the uniformly deposited p-a-Si:H layer. Since the uniformly deposited p-a-Si:H layer by cluster is highly needed to be doped with high temperature heat treatment. Amorphous silicon layer absorption range for fiber laser did not match well to be directly annealed. To improve the annealing effect, we introduce additional lamp furnace heat treatment. For p-a-Si:H layer with the ratio of $SiH_4:B_2H_6:H_2$=30:30:120, at $200^{\circ}C$, 50 W power, 0.2 Torr for 30 min. $20\;mm\;{\times}\;20\;mm$ size fiber laser cut wafers were activated by Q-switched fiber laser (1,064 nm) with different sets of power levels and periods, and for the lamp furnace annealing, $980^{\circ}C$ for 30 min heat treatment were implemented. To make the sheet resistance expectable and uniform as important processes for the $p^+$ layer on a polished n-type silicon wafer of (100) plane, the Q-switched fiber laser used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the fiber laser treatment showed the trade-offs between the lifetime and the sheet resistance as $100\;{\omega}/sq.$ and $11.8\;{\mu}s$ vs. $17\;{\omega}/sq.$ and $8.2\;{\mu}s$. Diode level device was made to confirm the electrical properties of these experimental results by measuring C-V(-F), I-V(-T) characteristics. Uniform and expectable boron heavy doped layers by fiber laser and lamp furnace are not only basic and essential conditions for the n-type crystalline silicon solar cell fabrication processes, but also the controllable doping concentration and depth can be established according to the deposition conditions of layers.