Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristic in Mg-doped p-type GaN changing activation temperature in $N_2$ gas ambient

  • Lee, Sung-Ho (University of Seoul, Korea Electronics Technology Institude) ;
  • Kim, Chul-Joo (University of Seoul, Korea Electronics Technology Institude) ;
  • Seo, Yong-Gon (University of Seoul, Korea Electronics Technology Institude) ;
  • Seo, Mun-Suek (University of Seoul, Korea Electronics Technology Institude) ;
  • Hwang, Sung-Min (University of Seoul, Korea Electronics Technology Institude)
  • Published : 2008.11.06
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Abstract

Conventional furnace annealing (CFA) for activating Mg-doped p-type GaN films had been performed in pure $N_2$ ambient. All sample activated the same gas ambient. The annealing process change temperature: the first process is performed at $550^{\circ}C$ for 10 min. but, the first process is the same bulk. From second to five process increase activation temperature to change $50^{\circ}C$ and annealing time keeping for 10 min. It is found that the samples characteristic measure hall measurement. Similar results were also evidenced by photoluminescence (PL) measurement.

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