Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.06a
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- Pages.10-11
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- 2006
Effect of Vacuum Annealing on Thin Film Nickel Silicide for Nano Scale CMOSFETs
- Zhang, Ying-Ying (Chungnarn National University) ;
- Oh, Soon-Young (Chungnarn National University) ;
- Kim, Yong-Jin (Chungnarn National University) ;
- Lee, Won-Jae (Chungnarn National University) ;
- Zhong, Zhun (Chungnarn National University) ;
- Jung, Soon-Yen (Chungnarn National University) ;
- Li, Shi-Guang (Chungnarn National University) ;
- Kim, Yeong-Cheol (Korea University of Technology and Education) ;
- Wang, Jin-Suk (Chungnarn National University) ;
- Lee, Hi-Deok (Chungnarn National University)
- Published : 2006.06.22
Abstract
In this study, the Ni/Co/TiN (6/2/25 nm) structure was deposited for thermal stability estimation. Vacuum (30 mTorrs) annealing was carried out to compare with furnace annealing in nitrogen ambient. The proposed Ni/Co/TiN structure exhibited low temperature silicidation and wide range of rapid thermal process (RTP) windows. The sheet resistance was too high to measure after furnace annealing at