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http://dx.doi.org/10.4313/JKEM.2015.28.9.598

AFM and C-F Properties of Ceramic Thin Film with Annealing Method  

Choi, Woon-Shik (Department of Technology Education, Sehan University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.28, no.9, 2015 , pp. 598-601 More about this Journal
Abstract
The $Sr_{0.7}Bi_{2.3}Nb_2O_9(SBN)$ thin films are deposited on Pt electrode($Pt/Ti/SiO_2/Si$) using RF sputtering method at various deposition temperature. The deposition temperature of optimum was $300^{\circ}C$. SBN thin films were annealed at $500{\sim}700^{\circ}C$ using furnace and RTA, respectively. The surface roughness showed about 2.42 nm in annealing temperature($600^{\circ}C$) of furnace. The capacitance density of SBN thin films were increased with the increase of annealing temperature. The maximum capacitance density of $0.7{\mu}F/cm^2$ was obtained by annealing temperature($700^{\circ}C$). The frequency dependence of dielectric loss showed about 0.03 in frequency ranges of 1~1,000 kHz.
Keywords
Deposition; Roughness; Capacitance; Dielectric loss;
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