• 천문학회지
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• 제53권5호
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• pp.103-115
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• 2020

We analyze the spatially resolved kinematics of gas and stars for a sample of ten hidden type 1 AGNs in order to investigate the nature of their central sources and the scaling relation with host galaxy stellar velocity dispersion. We select our sample from a large number of hidden type 1 AGNs, which are identified based on the presence of a broad (full width at half maximum ≳1000 km s^-1) component in the Hα line profile and which are frequently mis-classified as type 2 AGNs because AGN continuum and broad emission lines are weak or obscured in the optical spectral range. We used the Blue Channel Spectrograph at the 6.5-m Multiple Mirror Telescope to obtain long-slit data with a spatial scale of 0.3 arcsec pixel^-1. We detected broad Hβ lines for only two targets; however, the presence of strong broad Hα lines indicates that the AGNs we selected are all low-luminosity type 1 AGNs. We measured the velocity, velocity dispersion, and flux of stellar continuum and gas emission lines (i.e., Hβ and [O III]) as a function of distance from the center. The spatially resolved gas kinematics traced by Hβ or [O III] are generally similar to the stellar kinematics except for the inner center, where signatures of gas outflows are detected. We compare the luminosity-weighted effective stellar velocity dispersions with the black hole masses and find that our hidden type 1 AGNs, which have relatively low back hole masses, follow the same scaling relation as reverberation-mapped type 1 AGN and more massive inactive galaxies.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.420-420
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• 2012

ZnO seed layer were deposited on quartz substrate by sol-gel method and prism-like Al-doped ZnO nanorods (AZO nanorods) were grown on ZnO seed layer by hydrothermal method with various Al concentration ranging from 0 to 2.0 at.%. Structural and optical properties of the AZO nanorods were investigated by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), photoluminescence (PL). The diameter of the AZO nanorods was smaller than undoped ZnO nanorods and its diameter of the AZO nanorods decreased with increasing Al concentration. In XRD spectrum, it was observed that stress and full width at half maximum (FWHM) of the AZO nanorods decreased and the 'c' lattice constant increased as the Al concentration increased. From undoped ZnO nanorods, it was observed that the green-red emission peak of deep-level emission (DLE) in PL spectra. However, after Al doping, not only a broad green emission peak but also a blue emission peak of DLE were observed.

• Mass Spectrometry Letters
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• 제7권3호
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• pp.69-73
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• 2016

High-resolution quadrupole-Orbitrap mass spectrometry (HRMS), with high-resolution (> 10,000 at full-width at half-maximum) and accurate mass (< 5 ppm deviation) capabilities, plays an important role in the structural elucidation of drug metabolites in the pharmaceutical industry. ML106, a derivative of imidazobenzimidazole, decreased melanin content and tyrosinase activity in a dose-dependent manner. Here, we investigated the phase 1 metabolic pathway of ML106 using HRMS in human liver microsomes (HLMs) and recombinant cDNA-expressed cytochrome P450 (CYP). After the incubation of ML106 with pooled HLMs and recombinant cDNA-expressed CYP in the presence of NADPH, five phase 1 metabolites, including three mono-hydroxylated metabolites (M1-3) and two di-hydroxylated metabolites (M4 and M5), were investigated. The metabolite structures were postulated by the elucidation of protonated mass spectra using HRMS. The CYP isoforms related to the hydroxylation of ML106 were studied after incubation with recombinant cDNA-expressed CYP. Here, we identified the phase 1 metabolic pathway of ML106 induced by CYP in HLMs.

• Journal of Magnetics
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• 제21권1호
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• pp.35-39
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• 2016

$Cr_{100-x}Ti_x$ amorphous texture-inducing layers (TIL) were investigated to realize highly (002) oriented $L1_0$ FePt-C granular films through hetero-epitaxial growth on the (002) textured bcc-$Cr_{80}Mn_{20}$ seed layer (bcc-SL). As-deposited TILs showed the amorphous phase in Ti content of $30{\leq}x(at%){\leq}75$. Particularly, films with $40{\leq}x{\leq}60$ kept the amorphous phase against the heat treatment over $600^{\circ}C$. It was found that preference of the crystallographic texture for bcc-SLs is directly affected by the structural phase of TILs. (002) crystallographic texture was realized in bcc-SLs deposited on the amorphous TILs ($40{\leq}x{\leq}70$), whereas (110) texture was formed in bcc-SLs overlying on crystalline TILs (x < 30 and x > 70). Correlation between the angular distribution of (002) crystal orientation of bcc-SL evaluated by full width at half maximum of (002) diffraction (FWHM) and a grain diameter of bcc-SL indicated that while the development of the lateral growth for bcc-SL grain reduces FWHM, crystallization of amorphous TILs hinders FWHM. $L1_0$ FePt-C granular films were fabricated under the substrate heating process over $600^{\circ}C$ with having different FWHM of bcc-SL. Hysteresis loops showed that squareness ($M_r/M_s$) of the films increased from 0.87 to 0.95 when FWHM of bcc-SL decreased from $13.7^{\circ}$ to $3.8^{\circ}$. It is suggested that the reduction of (002) FWHM affects to the overlying MgO film as well as FePt-C granular film by means of the hetero-epitaxial growth.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.99-99
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• 2008

대구경, 고품질 GaN 단결정 기판은 HVPE 방법을 이용하여 제조하였다. 이때 성장 방법은 기판인 $Al_2O_3$ 단결정 기판을 질화처리 하였으며, 이종기판 성장 시 야기되는 격자 불일치와 성장 후 냉각동안에 열팽창 계수의 불일치로 야기되는 휨이나 crack 발생을 제거하기 위하여 step-growth 방법을 사용하였다. 사파이어 위에 성장된 GaN의 기판은 두께가 380um이며, 직경은 3"로 crack 발생은 없었으며, $600^{\circ}C$에서 레이저 분리 방법을 이용하여 사파이어와 분리하였다. 그러나 분리된 기판은 이종기판과의 접촉면에서 고밀도 결함발생으로 인하여 휨이 발생하였으며, 표면을 연마한 후 DCXRD의 FWHM은 107 arcsec, PL을 이용한 결함밀도는 $6.2\times10^6/cm^2$으로 나타났다.

• 마이크로전자및패키징학회지
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• 제26권4호
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• pp.113-118
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• 2019

In this study, we investigated the growth of single-crystallinity α-Ga₂O₃ thin films on c-plane sapphire substrates using halide vapor pressure epitaxy. We also found the optimal growth conditions to suppress the phase transition of α-Ga₂O₃. Our results confirmed that the growth temperature and partial pressure of the reactive gas greatly influenced the crystallinity. The optimal growth temperature range was about 460~510℃, and the α-Ga₂O₃ thin films with the highest crystallinity were obtained at a III/VI ratio of 4. The thickness and surface morphology of the thin films was observed by scanning electron microscopy. The film thickness was 6.938 ㎛, and the full width at half maximum of the ω-2θ scan rocking curve was as small as 178 arcsec. The optical band gap energy obtained was 5.21 eV, and the films were almost completely transparent in the near-ultraviolet and visible regions. The etch pit density was found to be as low as about 6.0 × 10⁴ cm^-2.

• 한국전기전자재료학회논문지
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• 제29권6호
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• pp.348-352
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• 2016

In this paper, GaN film was grown on AlN/PSS by hydride vapor phase epitaxy compared with GaN on planar sapphire. Thin AlN layer for buffer layer was deposited on patterned sapphire substrate (PSS) by metal organic chemical vapor deposition. Surface roughness of GaN/AlN on PSS was remarkably decreased from 28.31 to 5.53 nm. Transmittance of GaN/AlN grown on PSS was lower than that of planar sapphire at entire range. XRD spectra of GaN/AlN grown on PSS corresponded the wurzite structure and c-axis oriented. The full width at half maximum (FWHM) values of ${\omega}$-scan X-ray rocking curve (XRC) for GaN/AlN grown on PSS were 196 and 208 arcsec for symmetric (0 0 2) and asymmetric (1 0 2), respectively. FWHM of GaN on AlN/PSS was improved more than 50% because of lateral overgrowth and AlN buffer effect.

• 한국전기전자재료학회논문지
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• 제31권6호
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• pp.357-361
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• 2018

We demonstrated a crack-free ${\alpha}-Ga_2O_3$ on sapphire substrate by horizontal halide vapor phase epitaxy (HVPE). Oxygen-and gallium chloride-synthesized Ga metal and HCl were used as the precursors, and $N_2$ was used as the carrier gas. The HCl flow and growth temperature were controlled in the ranges of 10~30 sccm and $450{\sim}490^{\circ}C$, respectively. The surface of ${\alpha}-Ga_2O_3$ template grown at $470^{\circ}C$ was flat and the root-mean-square (RMS) roughness was ~2 nm. The full width at half maximum (FWHM) values for the symmetric-plane diffractions, were as small as 50 arcsec and those for the asymmetric-plane diffractions were as high as 1,800 arcsec. The crystal quality of ${\alpha}-Ga_2O_3$ on sapphire can be controlled by varying the HCl flow rate and growth temperature.

• 한국광학회지
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• 제16권5호
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• pp.476-478
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• 2005

전자선 증착기를 이용하여 $1.3{\mu}m$ 중심 파장의 파브리-페로 에탈론을 $Al_{2}O_3$와 a-Si 박막 쌍으로 증착하였다. 제작된 에탈론의 투과율 및 반사율 스펙트럼을 측정하여, 공진 파장에서 투과 반치폭이 ${\sim}12.1\;nm$이며 피네세(finesse) 값은 53임을 알았다. $Al_{2}O_3$ 단일박막의 광학 상수는 타원분광기법으로 측정하였다. $Al_{2}O_3$와 a-Si 박막 에탈론의 측정을 통하여 a-Si 박막의 굴절률은 각각 실수부 3.120, 허수부 0.002로 측정하였다. 이러한 박막 쌍은 $1.3{\mu}m$ 파장 표면방출레이저의 출력 반사경으로 사용 가능하다.

• Journal of the Optical Society of Korea
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• 제17권1호
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• pp.91-96
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• 2013

We report a method for optical monitoring of tumors in an animal model using optical coherence tomography (OCT). In a spectral domain OCT system, a superluminescent diode light source with a full width of 66 nm at half maximum and peak wavelength of 950 nm was used to take images having an axial resolution of 6.8 ${\mu}m$. Cancer cells of PC-3 were cultured and inoculated into the hypodermis of auricle tissues in BALB/c nude mice. We observed tumor formation and growth at the injection region of cancer cells in vivo and obtained the images of tumor mass center and sparse circumferences. On the $5^{th}$ day from an inoculation of cancer cells, histological images of the tumor region using cross-sectional slicing and dye staining of specimens were taken in order to confirm the correlation with the high resolution OCT images. The OCT image of tumor mass compared with normal tissues was analyzed using its A-scan data so as to obtain a tissue attenuation rate which increases according to tumor growth.