• Journal of Power System Engineering
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• v.17 no.2
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• pp.103-107
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• 2013

The structure of a variable liquid column oscillator(a VLCO) is analogous to that of the tuned liquid column damper used to suppress oscillatory motion in large structures like tall buildings and cargo ships. The VLCO is a system absorbing high kinetic energy of accelerated motions of multiple floating bodies in the effect of air springs occurred by installation of inner air chambers. Thus, VLCO can improve the efficiency of energy than wave energy converters of the activating object type made in Pelamis Company. In this research, the experiment was performed that a simple floating body was filled with internal fluid of same draft. The characteristics of motions were evaluated in each case of the opening or closing of the upper valves.

• Computational Structural Engineering : An International Journal
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• v.2 no.1
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• pp.43-50
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• 2002

This paper presents a method to predict dynamic responses of floating bodies in the time domain. Because of the frequency-dependence of the radiation wave forces, the memory effect must be taken into account when the responses are evaluated in the time domain. Although the formulations firstly developed by Cummins (1962) have been well-known for this purpose, the effective numerical procedure has not been established yet. This study employs FFT (Fast Fourier Transform) algorithm to evaluate the memory effect function, and the equations of motion of an integro-differential type are solved by Newmark-β method. Numerical examples for a truncated circular cylinder have indicated the effectiveness of the proposed numerical procedure.

• Journal of Ocean Engineering and Technology
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• v.25 no.4
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• pp.1-6
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• 2011

The installation of a topside structure can be categorized into the following stages: start, pre-lifting, lifting, lifted, rotating, positioning, lowering, mating, and end of installation. The transfer of the module onto the floating spar hull occurs in the last three stages, from lowering to the end. The coupled multi-body motions are calculated in both calm water and in irregular waves with a significant wave height (1.52m). The effects of the hydrodynamic interactions between the heavy lifting vessel and the spar hull during the lowering and mating stages are considered. The internal forces caused by the load transfer and ballasting are derived for the mating phases. The results of the internal forces for the calm water condition are compared with those in the irregular sea condition. Although the effect of the pitch motion on the relative vertical motion between the deck of the floating structure and the topside module is significant in the mating phases, the internal force induced pitch motion is too small to have this influence. However, the effect of the internal force on the wave-induced heave responses in the mating phases is noticeable in the irregular sea condition because transfer mass-induced draught changes for the floating structure are observed to have higher amplitudes than the external force induced responses. The impacts of the module on the spar hull in the mating phase are investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.95-96
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• 2009

A fully depleted capacitorless 1-transistor dynamic random access memory (FD 1T-DRAM) based on a sSOI strained-silicon-on-insulator) wafer was investigated. The fabricated device showed excellent electrical characteristics of transistor such as low leakage current, low subthreshold swing, large on/off current ratio, and high electron mobility. The FD sSOI 1T-DRAM can be operated as memory device by the floating body effect when the substrate bias of -15 V is applied, and the FD sSOI 1T-DRAM showed large sensing margin and several milli seconds data retention time.

• ETRI Journal
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• v.26 no.6
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• pp.575-582
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• 2004

Fully-depleted silicon-on-insulator (FD-SOI) devices with a 15 nm SOI layer thickness and 60 nm gate lengths for analog applications have been investigated. The Si selective epitaxial growth (SEG) process was well optimized. Both the single- raised (SR) and double-raised (DR) source/drain (S/D) processes have been studied to reduce parasitic series resistance and improve device performance. For the DR S/D process, the saturation currents of both NMOS and PMOS are improved by 8 and 18%, respectively, compared with the SR S/D process. The self-heating effect is evaluated for both body contact and body floating SOI devices. The body contact transistor shows a reduced self-heating ratio, compared with the body floating transistor. The static noise margin of an SOI device with a $1.1\;{\mu}m^2$ 6T-SRAM cell is 190 mV, and the ring oscillator speed is improved by 25 % compared with bulk devices. The DR S/D process shows a higher open loop voltage gain than the SR S/D process. A 15 nm ultra-thin body (UTB) SOI device with a DR S/D process shows the same level of noise characteristics at both the body contact and body floating transistors. Also, we observed that noise characteristics of a 15 nm UTB SOI device are comparable to those of bulk Si devices.

• Journal of Ocean Engineering and Technology
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• v.24 no.5
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• pp.16-21
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• 2010

During the loading/offloading operation of a liquefied natural gas carrier (LNGC) that is moored in a side-by-side configuration with an offshore plant, sloshing that occurs due to the partially filled LNG tank and the interactive effect between the two floating bodies are important factors that affect safety and operability. Therefore, a time-domain software program, called CHARM3D, was developed to consider the interactions between sloshing and the motion of a floating body, as well as the interactions between multiple bodies using the potential-viscous hybrid method. For the simulation of a floating body in the time domain, hydrodynamic coefficients and wave forces were calculated in the frequency domain using the 3D radiation/diffraction panel program based on potential theory. The calculated values were used for the simulation of a floating body in the time domain by convolution integrals. The liquid sloshing in the inner tanks is solved by the 3D-FDM Navier-Stokes solver that includes the consideration of free-surface non-linearity through the SURF scheme. The computed sloshing forces and moments were fed into the time integration of the ship's motion, and the updated motion was, in turn, used as the excitation force for liquid sloshing, which is repeated for the ensuing time steps. For comparison, a sloshing motion coupled analysis program based on linear potential theory in the frequency domain was developed. The computer programs that were developed were applied to the side-by-side offloading operation between the offshore plant and the LNGC. The frequency-domain results reproduced the coupling effects qualitatively, but, in general, the peaks were over-predicted compared to experimental and time-domain results. The interactive effects between the sloshing liquid and the motion of the vessel can be intensified further in the case of multiple floating bodies.

• Journal of Ocean Engineering and Technology
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• v.38 no.2
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• pp.53-63
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• 2024

Submerged breakwaters can be installed underneath floating structures to reduce the external wave loads acting on the structure. The objective of this study was to establish an optimization analysis framework to determine the corresponding shape and position of the submerged breakwater that can minimize or maximize the external forces acting on the floating structure. A two-dimensional frequency-domain boundary element method (FD-BEM) based on the linear potential theory was developed to perform the hydrodynamic analysis. A metaheuristic algorithm, the advanced particle swarm optimization, was newly coupled to the FD-BEM to perform the optimization analysis. The optimization analysis process was performed by calling FD-BEM for each generation, performing a numerical analysis of the design variables of each particle, and updating the design variables using the collected results. The results of the optimization analysis showed that the height of the submerged breakwater has a significant effect on the surface piercing body and that there is a specific area and position with an optimal value. In this study, the optimal values of the shape and position of a single submerged breakwater were determined and analyzed so that the external force acting on a surface piercing body was minimum or maximum.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.679-682
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• 2005

Negative-differential conductance (NDC) characteristics as well as negative-differential trans-conductance (NDT) characteristics have been observed in the room temperature I-V characteristics of Field-induced Inter-band Tunneling Effect Transistors (FITETs). These characteristics have been explained with inter-band tunneling physics, from which, inter-band tunneling current flows when the energy bands of degenerately doped regions align, and it does not flow when they don't. FITET is an SOI device and the body region is not directly connected to the external terminal. Therefore, Fermi energy in the body region is determined by electrical coupling among four regions - gate, source, drain and substrate. So, a quasi Fermi energy of the majority carriers in the floating body region can be changed by external voltages, and this causes the energy band movements in the body region, which determine whether the energy bands between degenerately doped junctions aligns or not. This is a key point for an explanation of NDT and NDC characteristics. In this paper, a quasi Fermi energy movement in the floating body region of FITET was investigated by a device simulation. This result was applied for the description of relation between quasi Fermi energy in the body region and external gate bias voltage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.9
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• pp.1771-1777
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• 2016

In this thesis, the breakdown voltage characteristics of silicon nanowire N-channel GAA MOSFETs were analyzed through experiments and 3-dimensional device simulation. GAA MOSFETs with the gate length of 250nm, the gate dielectrics thickness of 6nm and the channel width ranged from 400nm to 3.2um were used. The breakdown voltage was decreased with increasing gate voltage but it was increased at high gate voltage. The decrease of breakdown voltage with increasing channel width is believed due to the increased current gain of parasitic transistor, which was resulted from the increased potential in channel center through floating body effects. When the positive charge was trapped into the gate dielectrics after gate stress, the breakdown voltage was decreased due to the increased potential in channel center. When the negative charge was trapped into the gate dielectrics after gate stress, the breakdown voltage was increased due to the decreased potential in channel center. We confirmed that the measurement results were agreed with the device simulation results.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.145-145
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• 2010

반도체 소자의 크기가 수십 나노미터 영역으로 줄어들면서, 메모리 소자 또한 미세화를 위해 새로운 기술을 요구하고 있다. 1T DRAM은 하나의 트랜지스터와 하나의 캐패시터 구조를 가진 기존의 DRAM과 달리, 캐패시터 영역을 없애고 하나의 트랜지스터만으로 동작하기 때문에 복잡한 공정과정을 줄일 수 있으며 소자집적화에도 용이하다. 또한 SOI (Silicon-On-Insulator) 기판을 사용함으로써 단채널효과와 누설전류를 감소시키고, 소비전력이 적다는 이점을 가지고 있다. 1T DRAM은 floating body effect에 의해 상부실리콘의 중성영역에 축적된 정공을 이용하여 정보를 저장하게 된다. floating body effect를 발생시키기 위해 본 연구에서는 SOI 기판을 사용한 MOSFET을 사용하였는데, SOI 기판은 불순물 도핑농도에 따라 상부실리콘의 공핍층 두께가 결정된다. 실제로 불순물을 $10^{15}cm^{-3}$ 정도 도핑을 하게 되면 완전공핍된 SOI 구조가 된다. 이는 subthreshold swing값이 작고 저전압, 저전력용 회로에 적합한 특성을 보이기 때문에 부분공핍된 SOI 구조보다 우수한 특성을 가진다. 하지만, 상부실리콘의 중성영역이 완전히 공핍되어 정공이 축적될 공간이 존재하지 않게 된다. 이를 해결하기 위해 기판에 전압을 인가 후 kink effect를 확인하여, 메모리 소자로서의 구동 가능성을 알아보았다. 본 연구에서는 상부실리콘의 두께가 감소함에 따라 1T DRAM의 메모리 특성변화를 관찰하고자, TMAH (Tetramethy Ammonuim Hydroxide) 용액을 이용한 습식식각을 통해 상부실리콘의 두께가 각기 다른 소자를 제작하였다. 제작된 소자는 66 mv/dec의 우수한 subthreshold swing 값을 나타내며 빠른 스위칭 특성을 보였다. 또한 kink effect가 발생하는 최적의 조건을 찾고, 상부실리콘의 두께가 메모리 소자의 쓰기/소거 동작의 경향성에 미치는 영향을 평가하였다.