• IEMEK Journal of Embedded Systems and Applications
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• v.14 no.2
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• pp.87-96
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• 2019

Low power issue is one of the most critical problems in the Internet of Things (IoT), which are powered by battery. To solve this problem, various approaches have been presented so far. In this paper, we propose a method to reduce the power consumption by reducing the numbers of accesses into the flash memory consuming a large amount of power for on-chip software execution. Our approach is based on using cooperative logging structure to distribute the sampling overhead in single sensor node to adjacent nodes in case of rare-event applications. The proposed algorithm to identify event occurrence is newly introduced with negative feedback method by observing difference between past data and recent data coming from the sensor. When an event with need of flash access is determined, the proposed approach only allows access to write the sampled data in flash memory. The proposed event detection algorithm (EDA) result in 30% reduction of power consumption compared to the conventional flash write scheme for all cases of event. The sampled data from the sensor is first traced into the random access memory (RAM), and write access to the flash memory is delayed until the page buffer of the on-chip flash memory controller in the micro controller unit (MCU) is full of the numbers of the traced data, thereby reducing the frequency of accessing flash memory. This technique additionally reduces power consumption by 40% compared to flash-write all data. By sharing the sampling information via LoRa channel, the overhead in sampling data is distributed, to reduce the sampling load on each node, so that the 66% reduction of total power consumption is achieved in several IoT edge nodes by removing the sampling operation of duplicated data.

• Journal of the Korea Computer Graphics Society
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• v.27 no.3
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• pp.1-11
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• 2021

Slow sync is a photography technique where a user takes an image with long exposure and a camera flash to enlighten the foreground and background. Unlike short exposure with flash and long exposure without flash, slow sync guarantees the bright foreground and background in the dim environment. However, taking a slow sync image with a smartphone is difficult because the smartphone camera has continuous and weak flash and can not turn on flash if the exposure time is long. This paper proposes a deep learning method that input is a short exposure flash image and output is a slow sync image. We present a deep learning network with a weight map for spatially varying enlightenment. We also propose a dataset that consists of smartphone short exposure flash images and slow sync images for supervised learning. We utilize the linearity of a RAW image to synthesize a slow sync image from short exposure flash and long exposure no-flash images. Experimental results show that our method trained with our dataset synthesizes slow sync images effectively.

• Journal of Korea Spatial Information System Society
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• v.11 no.2
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• pp.133-142
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• 2009

Recently, with the advance of wireless internet and the frequent use of mobile devices, demand for LBS(Location Based Service) is increasing, and research is required on spatial indexes for the storage and maintenance of spatial data to provide efficient LBS in mobile device environments. In addition, the use of flash memory as an auxiliary storage device is increasing in order to store large spatial data in a mobile terminal with small storage space. However, the application of existing spatial indexes to flash-memory lowers index performance due to the frequent updates of nodes. To solve this problem, research is being conducted on flash-memory based spatial indexes, but the efficiency of such spatial indexes is lowered by low utilization of buffer and flash-memory space. Accordingly, in order to solve problems in existing flash-memory based spatial indexes, this paper proposed FR-Tree (Flash-Memory based R-Tree) that uses the node compression technique and the delayed write operation technique. The node compression technique of FR-Tree increased the utilization of flash-memory space by compressing MBR(Minimum Bounding Rectangle) of spatial data using relative coordinates and MBR size. And, the delayed write operation technique reduced the number of write operations in flash memory by storing spatial data in the buffer temporarily and reflecting them in flash memory at once instead of reflecting the insert, update and delete of spatial data in flash-memory for each operation. Especially, the utilization of buffer space was enhanced by preventing the redundant storage of the same spatial data in the buffer. Finally, we perform ed various performance evaluations and proved the superiority of FR-Tree to the existing spatial indexes.

• Journal of Advanced Navigation Technology
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• v.20 no.4
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• pp.321-328
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• 2016

Typical MLC NAND flash devices are considered less reliable than SLC NAND flash devices. Although raw bit error rate (RBER) of MLC flash had been considered approximately 1000times or more higher than that of SLC flash, recent research conducted on Google's data center shows that it is much lower than such expectation. Based on the research, we devised In Drive Data Duplication (IDDD) scheme that efficiently exploit MLC flash's sufficient capacity to improve its data reliability without structural complexity increment using SSD intrinsic firmware layer, and showed the data reliability expectation of MLC flash could be significantly higher than that of SLC flash from measured and calculated error rates. Even though RBER of SLC flash was lower than that of MLC flash in 44 out of 48 cases we studied, applying IDDD scheme, RBER of MLC flash was became lower than that of SLC in all 48 cases and uncorrectable bit error rate (UBER) of MLC flash was became lower than that of SLC flash in 45 out of 48 cases.

• Journal of the Korea Society of Computer and Information
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• v.22 no.9
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• pp.1-8
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• 2017

In this paper, we propose a file system for flash memory which remedies shortcomings of existing flash memory file systems. Besides supporting large block size, the proposed file system reduces time in initializing file system significantly by adopting logical address comprised of erase block number and bitmap for pages in the block to find a page. The file system is suitable for embedded systems with limited main memory since it has small in-memory data structures. It also provides efficient management of obsolete blocks and free blocks, which contribute to the reduction of file update time. Finally the proposed file system can easily configure the maximum file size and file system size limits, which results in portability to emerging larger flash memories. By conducting performance evaluation studies, we show that the proposed file system can contribute to the performance improvement of embedded systems.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.537-542
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• 2014

The three-dimensional (3-D) NAND flash structure with fully charge storage using edge fringing field effect is presented, and its programming characteristic is evaluated. We successfully confirmed that this structure using fringing field effect provides good program characteristics showing sufficient threshold voltage ($V_T$) margin by technology computer-aided design (TCAD) simulation. From the simulation results, we expect that program speed characteristics of proposed structure have competitive compared to other 3D NAND flash structure. Moreover, it is estimated that this structural feature using edge fringing field effect gives better design scalability compared to the conventional 3D NAND flash structures by scaling of the hole size for the vertical channel. As a result, the proposed structure is one of the candidates of Terabit 3D vertical NAND flash cell with lower bit cost and design scalability.

• Journal of ILASS-Korea
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• v.10 no.1
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• pp.1-9
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• 2005

When the water jets heated up to the saturation temperature at a high line pressure are sprayed into a reduced (atmospheric) pressure through an air-assisted nozzle, the jets experience sudden exposure into a reduced pressure, get superheated and produce steam bubbles while atomization processes of jets are taking place. This process is called flash atomization. In this study the flash atomization of superheated water jets assisted by air has been studied. Sprays with flash atomization have been photographed at various water and air flow rates and water superheats. It has been found that the spray angle with flash atomization increases with water superheat and water flow rate but decreases with air flow rate. The degree of change of spray angle has been analyzed and correlated as a function of superheat, air and water flow rates.

• IEMEK Journal of Embedded Systems and Applications
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• v.7 no.4
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• pp.201-207
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• 2012

Currently, NAND Flash memory has been widely used in consumer storage devices due to its non-volatility, stability, economical feasibility, low power usage, durability, and high density. However, a high capacity of NAND flash memory causes the high power consumption and the low performance. In the convention memory research, a hierarchical filter mechanism can archive an effective performance improvement in terms of the power consumption. In order to attain the best filter structure for NAND flash memory, we selected a direct-mapped filter, a victim filter, a fully associative filter and a 4-way set associative filter for comparison in the performance analysis. According to the results of the simulation, the fully associative filter buffer with a 128byte fetching size can obtain the bet performance compared to another filter structures, and it can reduce the energy*delay product(EDP) by about 93% compared to the conventional NAND Flash memory.

• IEMEK Journal of Embedded Systems and Applications
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• v.10 no.3
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• pp.151-156
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• 2015

Recently, an embedded flash memory has been widely used for the Internet of Things(IoT). Due to its nonvolatility, economical feasibility, stability, low power usage, and fast speed. With respect to power consumption, the embedded memory system must consider the most significant design factor. The objective of this research is to design high performance and low power NAND flash memory architecture including a dual buffer as a replacement for NOR flash. Simulation shows that the proposed NAND flash system can achieve better performance than a conventional NOR flash memory. Furthermore, the average memory access time of the proposed system is better that of other buffer systems with three times more space. The use of a small buffer results in a significant reduction in power consumption.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.26-31
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• 2002

To realize a high integrated Flash memory utilizing SONOS memory devices, the NOR type 1TC(one Transistor Cell) SONOS Flash arrays are fabricated and characterized. This SONOS Flash arrays with common source lines are designed and fabricated by conventional 0.35$\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cell is tunnel oxide of 34${\AA}$, nitride of 73${\AA}$ and blocking oxide of 34${\AA}$. To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and Bit line erase method are selected as the write operation and the erase method, respectively. The disturbance characteristics according to the write/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed.